JPS61268062A - ホットエレクトロン・トランジスタの製造方法 - Google Patents

ホットエレクトロン・トランジスタの製造方法

Info

Publication number
JPS61268062A
JPS61268062A JP60109365A JP10936585A JPS61268062A JP S61268062 A JPS61268062 A JP S61268062A JP 60109365 A JP60109365 A JP 60109365A JP 10936585 A JP10936585 A JP 10936585A JP S61268062 A JPS61268062 A JP S61268062A
Authority
JP
Japan
Prior art keywords
layer
electrode
base
collector
emitter
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP60109365A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0422342B2 (enExample
Inventor
Tsuguo Inada
稲田　嗣夫
Shunichi Muto
俊一 武藤
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
National Institute of Advanced Industrial Science and Technology AIST
Original Assignee
Agency of Industrial Science and Technology
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Agency of Industrial Science and Technology filed Critical Agency of Industrial Science and Technology
Priority to JP60109365A priority Critical patent/JPS61268062A/ja
Publication of JPS61268062A publication Critical patent/JPS61268062A/ja
Publication of JPH0422342B2 publication Critical patent/JPH0422342B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D48/00—Individual devices not covered by groups H10D1/00 - H10D44/00
    • H10D48/30—Devices controlled by electric currents or voltages
    • H10D48/32—Devices controlled by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H10D48/36—Unipolar devices
    • H10D48/362—Unipolar transistors having ohmic electrodes on emitter-like, base-like, and collector-like regions, e.g. hot electron transistors [HET], metal base transistors [MBT], resonant tunnelling transistors [RTT], bulk barrier transistors [BBT], planar doped barrier transistors [PDBT] or charge injection transistors [CHINT]

Landscapes

  • Bipolar Transistors (AREA)
JP60109365A 1985-05-23 1985-05-23 ホットエレクトロン・トランジスタの製造方法 Granted JPS61268062A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP60109365A JPS61268062A (ja) 1985-05-23 1985-05-23 ホットエレクトロン・トランジスタの製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP60109365A JPS61268062A (ja) 1985-05-23 1985-05-23 ホットエレクトロン・トランジスタの製造方法

Publications (2)

Publication Number Publication Date
JPS61268062A true JPS61268062A (ja) 1986-11-27
JPH0422342B2 JPH0422342B2 (enExample) 1992-04-16

Family

ID=14508382

Family Applications (1)

Application Number Title Priority Date Filing Date
JP60109365A Granted JPS61268062A (ja) 1985-05-23 1985-05-23 ホットエレクトロン・トランジスタの製造方法

Country Status (1)

Country Link
JP (1) JPS61268062A (enExample)

Also Published As

Publication number Publication date
JPH0422342B2 (enExample) 1992-04-16

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Legal Events

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EXPY Cancellation because of completion of term