JPS61260682A - 太陽電池とその製造方法 - Google Patents

太陽電池とその製造方法

Info

Publication number
JPS61260682A
JPS61260682A JP60104336A JP10433685A JPS61260682A JP S61260682 A JPS61260682 A JP S61260682A JP 60104336 A JP60104336 A JP 60104336A JP 10433685 A JP10433685 A JP 10433685A JP S61260682 A JPS61260682 A JP S61260682A
Authority
JP
Japan
Prior art keywords
film
silicon nitride
nitride film
plasma
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP60104336A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0365906B2 (enExample
Inventor
Sunao Nishioka
西岡　直
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP60104336A priority Critical patent/JPS61260682A/ja
Publication of JPS61260682A publication Critical patent/JPS61260682A/ja
Publication of JPH0365906B2 publication Critical patent/JPH0365906B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/14—Shape of semiconductor bodies; Shapes, relative sizes or dispositions of semiconductor regions within semiconductor bodies
    • H10F77/147—Shapes of bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/16—Material structures, e.g. crystalline structures, film structures or crystal plane orientations
    • H10F77/169—Thin semiconductor films on metallic or insulating substrates
    • H10F77/1692—Thin semiconductor films on metallic or insulating substrates the films including only Group IV materials
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy

Landscapes

  • Photovoltaic Devices (AREA)
JP60104336A 1985-05-14 1985-05-14 太陽電池とその製造方法 Granted JPS61260682A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP60104336A JPS61260682A (ja) 1985-05-14 1985-05-14 太陽電池とその製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP60104336A JPS61260682A (ja) 1985-05-14 1985-05-14 太陽電池とその製造方法

Publications (2)

Publication Number Publication Date
JPS61260682A true JPS61260682A (ja) 1986-11-18
JPH0365906B2 JPH0365906B2 (enExample) 1991-10-15

Family

ID=14378087

Family Applications (1)

Application Number Title Priority Date Filing Date
JP60104336A Granted JPS61260682A (ja) 1985-05-14 1985-05-14 太陽電池とその製造方法

Country Status (1)

Country Link
JP (1) JPS61260682A (enExample)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2005027229A1 (ja) * 2003-08-29 2005-03-24 Asahi Glass Company, Limited 透明導電膜付き基体およびその製造方法
JP2014165354A (ja) * 2013-02-26 2014-09-08 Panasonic Corp 多孔質シリコンの作製方法

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2005027229A1 (ja) * 2003-08-29 2005-03-24 Asahi Glass Company, Limited 透明導電膜付き基体およびその製造方法
JP2014165354A (ja) * 2013-02-26 2014-09-08 Panasonic Corp 多孔質シリコンの作製方法

Also Published As

Publication number Publication date
JPH0365906B2 (enExample) 1991-10-15

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