JPS6125218B2 - - Google Patents
Info
- Publication number
- JPS6125218B2 JPS6125218B2 JP2887279A JP2887279A JPS6125218B2 JP S6125218 B2 JPS6125218 B2 JP S6125218B2 JP 2887279 A JP2887279 A JP 2887279A JP 2887279 A JP2887279 A JP 2887279A JP S6125218 B2 JPS6125218 B2 JP S6125218B2
- Authority
- JP
- Japan
- Prior art keywords
- mos transistor
- circuit
- polysilicon
- drain
- wiring
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 19
- 229920005591 polysilicon Polymers 0.000 claims description 19
- 239000000463 material Substances 0.000 claims description 5
- 238000000034 method Methods 0.000 description 5
- 238000010586 diagram Methods 0.000 description 3
- 230000000295 complement effect Effects 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 230000010354 integration Effects 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
Landscapes
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Semiconductor Integrated Circuits (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2887279A JPS55121666A (en) | 1979-03-13 | 1979-03-13 | Mos transistor circuit |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2887279A JPS55121666A (en) | 1979-03-13 | 1979-03-13 | Mos transistor circuit |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS55121666A JPS55121666A (en) | 1980-09-18 |
| JPS6125218B2 true JPS6125218B2 (US20030220297A1-20031127-C00033.png) | 1986-06-14 |
Family
ID=12260465
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2887279A Granted JPS55121666A (en) | 1979-03-13 | 1979-03-13 | Mos transistor circuit |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS55121666A (US20030220297A1-20031127-C00033.png) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS61145027U (US20030220297A1-20031127-C00033.png) * | 1985-02-28 | 1986-09-06 | ||
| JPS62171322U (US20030220297A1-20031127-C00033.png) * | 1986-04-22 | 1987-10-30 | ||
| JPH0338017Y2 (US20030220297A1-20031127-C00033.png) * | 1985-03-18 | 1991-08-12 |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4450620A (en) * | 1983-02-18 | 1984-05-29 | Bell Telephone Laboratories, Incorporated | Fabrication of MOS integrated circuit devices |
-
1979
- 1979-03-13 JP JP2887279A patent/JPS55121666A/ja active Granted
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS61145027U (US20030220297A1-20031127-C00033.png) * | 1985-02-28 | 1986-09-06 | ||
| JPH0338017Y2 (US20030220297A1-20031127-C00033.png) * | 1985-03-18 | 1991-08-12 | ||
| JPS62171322U (US20030220297A1-20031127-C00033.png) * | 1986-04-22 | 1987-10-30 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS55121666A (en) | 1980-09-18 |
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