JPS6125211B2 - - Google Patents

Info

Publication number
JPS6125211B2
JPS6125211B2 JP54029699A JP2969979A JPS6125211B2 JP S6125211 B2 JPS6125211 B2 JP S6125211B2 JP 54029699 A JP54029699 A JP 54029699A JP 2969979 A JP2969979 A JP 2969979A JP S6125211 B2 JPS6125211 B2 JP S6125211B2
Authority
JP
Japan
Prior art keywords
nitric acid
hno
present
hydrogen peroxide
silicon substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP54029699A
Other languages
English (en)
Japanese (ja)
Other versions
JPS55121653A (en
Inventor
Hiroo Sasaki
Mikio Takagi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP2969979A priority Critical patent/JPS55121653A/ja
Publication of JPS55121653A publication Critical patent/JPS55121653A/ja
Publication of JPS6125211B2 publication Critical patent/JPS6125211B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials

Landscapes

  • Formation Of Insulating Films (AREA)
JP2969979A 1979-03-14 1979-03-14 Method of treating surface of semiconductor substrate Granted JPS55121653A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2969979A JPS55121653A (en) 1979-03-14 1979-03-14 Method of treating surface of semiconductor substrate

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2969979A JPS55121653A (en) 1979-03-14 1979-03-14 Method of treating surface of semiconductor substrate

Publications (2)

Publication Number Publication Date
JPS55121653A JPS55121653A (en) 1980-09-18
JPS6125211B2 true JPS6125211B2 (https=) 1986-06-14

Family

ID=12283351

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2969979A Granted JPS55121653A (en) 1979-03-14 1979-03-14 Method of treating surface of semiconductor substrate

Country Status (1)

Country Link
JP (1) JPS55121653A (https=)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2594702B2 (ja) * 1989-05-07 1997-03-26 忠弘 大見 シリコン酸化膜及びそれを備えた半導体装置
EP0471844A4 (en) * 1989-05-07 1992-04-22 Tadahiro Ohmi Silicon oxide film and semiconductor device having the same
ATE130466T1 (de) * 1989-05-07 1995-12-15 Tadahiro Ohmi Verfahren zur herstellung eines siliziumoxydfilmes.
JP3221924B2 (ja) * 1992-08-07 2001-10-22 株式会社東芝 半導体装置の製造方法
US5869362A (en) * 1993-12-02 1999-02-09 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing semiconductor device
JP2860869B2 (ja) * 1993-12-02 1999-02-24 株式会社半導体エネルギー研究所 半導体装置およびその作製方法
JPH09232539A (ja) * 1996-02-28 1997-09-05 Nec Corp 半導体装置の製造方法
KR100235938B1 (ko) * 1996-06-24 1999-12-15 김영환 반구형 실리콘 제조방법
KR100856183B1 (ko) 2004-02-16 2008-10-10 샤프 가부시키가이샤 박막 트랜지스터와 그 제조 방법, 표시 장치, 산화막의개질 방법, 산화막의 형성 방법, 반도체 장치, 반도체장치의 제조 방법 및 반도체 장치의 제조 장치

Also Published As

Publication number Publication date
JPS55121653A (en) 1980-09-18

Similar Documents

Publication Publication Date Title
KR920010786A (ko) 실리콘 질화막을 선택적으로 제거하기 위한 기체에 의한 프로세스
KR970013100A (ko) 반도체 및 반도체기판표면의 산화막의 형성방법
TW439105B (en) In situ chemical generator and method
US6551409B1 (en) Method for removing organic contaminants from a semiconductor surface
TW301762B (en) Pre-thermal treatment cleaning process
US7404863B2 (en) Methods of thinning a silicon wafer using HF and ozone
US4176206A (en) Method for manufacturing an oxide of semiconductor
KR950027986A (ko) 반도체장치의 제조방법과 제조장치
JPS6125211B2 (https=)
US6048406A (en) Benign method for etching silicon dioxide
JPH01189921A (ja) レジスト除去装置
GB1046157A (en) Improvements in or relating to the manufacture of semiconductor devices
US4109030A (en) Method for thermally oxidizing silicon
US5650015A (en) Dry method for cleaning semiconductor substrate
US3751314A (en) Silicon semiconductor device processing
JPS5998726A (ja) 酸化膜形成法
JPS61105847A (ja) 基板表面洗浄方法
JPS63226029A (ja) 絶縁膜形成方法
JPH03136329A (ja) シリコン基板表面の清浄化方法
JPH02164035A (ja) 半導体基板の洗浄方法
JP2843946B2 (ja) シリコン基板表面の清浄化方法
JP2000319689A (ja) 電子材料用洗浄水
JPH04114431A (ja) 酸化法
JPS62115833A (ja) 半導体基板表面処理剤
JPH0974080A (ja) 半導体基板のオゾン洗浄方法