JPS61232678A - 半導体集積回路装置の製造方法 - Google Patents

半導体集積回路装置の製造方法

Info

Publication number
JPS61232678A
JPS61232678A JP60074804A JP7480485A JPS61232678A JP S61232678 A JPS61232678 A JP S61232678A JP 60074804 A JP60074804 A JP 60074804A JP 7480485 A JP7480485 A JP 7480485A JP S61232678 A JPS61232678 A JP S61232678A
Authority
JP
Japan
Prior art keywords
integrated circuit
semiconductor integrated
mask
nitride film
region
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP60074804A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0422345B2 (enrdf_load_stackoverflow
Inventor
Michio Komatsu
小松　理夫
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp filed Critical NEC Corp
Priority to JP60074804A priority Critical patent/JPS61232678A/ja
Publication of JPS61232678A publication Critical patent/JPS61232678A/ja
Publication of JPH0422345B2 publication Critical patent/JPH0422345B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
    • H10D62/149—Source or drain regions of field-effect devices
    • H10D62/151—Source or drain regions of field-effect devices of IGFETs 

Landscapes

  • Element Separation (AREA)
JP60074804A 1985-04-09 1985-04-09 半導体集積回路装置の製造方法 Granted JPS61232678A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP60074804A JPS61232678A (ja) 1985-04-09 1985-04-09 半導体集積回路装置の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP60074804A JPS61232678A (ja) 1985-04-09 1985-04-09 半導体集積回路装置の製造方法

Publications (2)

Publication Number Publication Date
JPS61232678A true JPS61232678A (ja) 1986-10-16
JPH0422345B2 JPH0422345B2 (enrdf_load_stackoverflow) 1992-04-16

Family

ID=13557859

Family Applications (1)

Application Number Title Priority Date Filing Date
JP60074804A Granted JPS61232678A (ja) 1985-04-09 1985-04-09 半導体集積回路装置の製造方法

Country Status (1)

Country Link
JP (1) JPS61232678A (enrdf_load_stackoverflow)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01228174A (ja) * 1988-03-08 1989-09-12 Nec Corp 半導体装置
JPH02153571A (ja) * 1988-12-05 1990-06-13 Nec Corp 耐放射線性ｍｉｓ型半導体集積回路の製造方法
JPH02309665A (ja) * 1989-05-25 1990-12-25 Agency Of Ind Science & Technol 半導体装置の製造方法

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01228174A (ja) * 1988-03-08 1989-09-12 Nec Corp 半導体装置
JPH02153571A (ja) * 1988-12-05 1990-06-13 Nec Corp 耐放射線性ｍｉｓ型半導体集積回路の製造方法
JPH02309665A (ja) * 1989-05-25 1990-12-25 Agency Of Ind Science & Technol 半導体装置の製造方法

Also Published As

Publication number Publication date
JPH0422345B2 (enrdf_load_stackoverflow) 1992-04-16

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