JPS61227987A - 結晶成長方法 - Google Patents
結晶成長方法Info
- Publication number
- JPS61227987A JPS61227987A JP6800985A JP6800985A JPS61227987A JP S61227987 A JPS61227987 A JP S61227987A JP 6800985 A JP6800985 A JP 6800985A JP 6800985 A JP6800985 A JP 6800985A JP S61227987 A JPS61227987 A JP S61227987A
- Authority
- JP
- Japan
- Prior art keywords
- crystal
- growth
- growing
- atoms
- elements
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000002109 crystal growth method Methods 0.000 title claims description 4
- 239000013078 crystal Substances 0.000 claims abstract description 85
- 239000000758 substrate Substances 0.000 claims abstract description 21
- 239000000470 constituent Substances 0.000 claims abstract description 16
- 238000000034 method Methods 0.000 claims abstract description 14
- 150000002500 ions Chemical class 0.000 claims abstract description 13
- 150000001875 compounds Chemical class 0.000 claims abstract description 4
- 230000001678 irradiating effect Effects 0.000 claims abstract description 4
- 239000006104 solid solution Substances 0.000 claims abstract description 3
- 230000000737 periodic effect Effects 0.000 claims abstract 2
- 239000007789 gas Substances 0.000 description 10
- 230000007547 defect Effects 0.000 description 7
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 6
- 239000011701 zinc Substances 0.000 description 3
- 230000007423 decrease Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000000407 epitaxy Methods 0.000 description 2
- 229910052734 helium Inorganic materials 0.000 description 2
- 239000001307 helium Substances 0.000 description 2
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 2
- 238000010884 ion-beam technique Methods 0.000 description 2
- 229910052743 krypton Inorganic materials 0.000 description 2
- DNNSSWSSYDEUBZ-UHFFFAOYSA-N krypton atom Chemical compound [Kr] DNNSSWSSYDEUBZ-UHFFFAOYSA-N 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 229910052725 zinc Inorganic materials 0.000 description 2
- DRDVZXDWVBGGMH-UHFFFAOYSA-N zinc;sulfide Chemical compound [S-2].[Zn+2] DRDVZXDWVBGGMH-UHFFFAOYSA-N 0.000 description 2
- 239000005083 Zinc sulfide Substances 0.000 description 1
- 230000001133 acceleration Effects 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 230000001788 irregular Effects 0.000 description 1
- 239000007791 liquid phase Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000001819 mass spectrum Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 1
- 238000000197 pyrolysis Methods 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 230000003746 surface roughness Effects 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- 238000001947 vapour-phase growth Methods 0.000 description 1
- 229910052984 zinc sulfide Inorganic materials 0.000 description 1
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
- Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6800985A JPS61227987A (ja) | 1985-03-31 | 1985-03-31 | 結晶成長方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6800985A JPS61227987A (ja) | 1985-03-31 | 1985-03-31 | 結晶成長方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS61227987A true JPS61227987A (ja) | 1986-10-11 |
| JPH0566355B2 JPH0566355B2 (enrdf_load_stackoverflow) | 1993-09-21 |
Family
ID=13361423
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP6800985A Granted JPS61227987A (ja) | 1985-03-31 | 1985-03-31 | 結晶成長方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS61227987A (enrdf_load_stackoverflow) |
-
1985
- 1985-03-31 JP JP6800985A patent/JPS61227987A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0566355B2 (enrdf_load_stackoverflow) | 1993-09-21 |
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