JPH0566355B2 - - Google Patents
Info
- Publication number
- JPH0566355B2 JPH0566355B2 JP6800985A JP6800985A JPH0566355B2 JP H0566355 B2 JPH0566355 B2 JP H0566355B2 JP 6800985 A JP6800985 A JP 6800985A JP 6800985 A JP6800985 A JP 6800985A JP H0566355 B2 JPH0566355 B2 JP H0566355B2
- Authority
- JP
- Japan
- Prior art keywords
- crystal
- growth
- growing
- temperature
- atoms
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000013078 crystal Substances 0.000 claims description 76
- 239000000470 constituent Substances 0.000 claims description 17
- 239000000758 substrate Substances 0.000 claims description 17
- 238000000034 method Methods 0.000 claims description 14
- 150000002500 ions Chemical class 0.000 claims description 11
- 230000001678 irradiating effect Effects 0.000 claims description 4
- 238000002109 crystal growth method Methods 0.000 claims description 3
- 150000001875 compounds Chemical class 0.000 claims description 2
- 230000000737 periodic effect Effects 0.000 claims description 2
- 239000006104 solid solution Substances 0.000 claims description 2
- 230000007547 defect Effects 0.000 description 8
- 239000007789 gas Substances 0.000 description 8
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 7
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 6
- 229910052734 helium Inorganic materials 0.000 description 4
- 229910052743 krypton Inorganic materials 0.000 description 4
- 239000011261 inert gas Substances 0.000 description 3
- 239000011701 zinc Substances 0.000 description 3
- 239000005083 Zinc sulfide Substances 0.000 description 2
- 229910052786 argon Inorganic materials 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000000407 epitaxy Methods 0.000 description 2
- 239000001307 helium Substances 0.000 description 2
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 2
- 238000010884 ion-beam technique Methods 0.000 description 2
- DNNSSWSSYDEUBZ-UHFFFAOYSA-N krypton atom Chemical compound [Kr] DNNSSWSSYDEUBZ-UHFFFAOYSA-N 0.000 description 2
- 238000004943 liquid phase epitaxy Methods 0.000 description 2
- 239000002994 raw material Substances 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 238000000927 vapour-phase epitaxy Methods 0.000 description 2
- 229910052984 zinc sulfide Inorganic materials 0.000 description 2
- 230000001133 acceleration Effects 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 230000001788 irregular Effects 0.000 description 1
- 238000001819 mass spectrum Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 1
- 230000010355 oscillation Effects 0.000 description 1
- 238000000197 pyrolysis Methods 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 230000003746 surface roughness Effects 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- 229910052724 xenon Inorganic materials 0.000 description 1
- DRDVZXDWVBGGMH-UHFFFAOYSA-N zinc;sulfide Chemical compound [S-2].[Zn+2] DRDVZXDWVBGGMH-UHFFFAOYSA-N 0.000 description 1
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
- Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6800985A JPS61227987A (ja) | 1985-03-31 | 1985-03-31 | 結晶成長方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6800985A JPS61227987A (ja) | 1985-03-31 | 1985-03-31 | 結晶成長方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS61227987A JPS61227987A (ja) | 1986-10-11 |
| JPH0566355B2 true JPH0566355B2 (enrdf_load_stackoverflow) | 1993-09-21 |
Family
ID=13361423
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP6800985A Granted JPS61227987A (ja) | 1985-03-31 | 1985-03-31 | 結晶成長方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS61227987A (enrdf_load_stackoverflow) |
-
1985
- 1985-03-31 JP JP6800985A patent/JPS61227987A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS61227987A (ja) | 1986-10-11 |
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