JPS61220456A - 半導体基板の製造方法 - Google Patents

半導体基板の製造方法

Info

Publication number
JPS61220456A
JPS61220456A JP60060987A JP6098785A JPS61220456A JP S61220456 A JPS61220456 A JP S61220456A JP 60060987 A JP60060987 A JP 60060987A JP 6098785 A JP6098785 A JP 6098785A JP S61220456 A JPS61220456 A JP S61220456A
Authority
JP
Japan
Prior art keywords
silicon nitride
semiconductor substrate
nitride layer
semiconductor
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP60060987A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0340512B2 (enrdf_load_stackoverflow
Inventor
Yoichi Araki
洋一 荒木
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Priority to JP60060987A priority Critical patent/JPS61220456A/ja
Publication of JPS61220456A publication Critical patent/JPS61220456A/ja
Publication of JPH0340512B2 publication Critical patent/JPH0340512B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates

Landscapes

  • Recrystallisation Techniques (AREA)
JP60060987A 1985-03-27 1985-03-27 半導体基板の製造方法 Granted JPS61220456A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP60060987A JPS61220456A (ja) 1985-03-27 1985-03-27 半導体基板の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP60060987A JPS61220456A (ja) 1985-03-27 1985-03-27 半導体基板の製造方法

Publications (2)

Publication Number Publication Date
JPS61220456A true JPS61220456A (ja) 1986-09-30
JPH0340512B2 JPH0340512B2 (enrdf_load_stackoverflow) 1991-06-19

Family

ID=13158291

Family Applications (1)

Application Number Title Priority Date Filing Date
JP60060987A Granted JPS61220456A (ja) 1985-03-27 1985-03-27 半導体基板の製造方法

Country Status (1)

Country Link
JP (1) JPS61220456A (enrdf_load_stackoverflow)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6461906A (en) * 1987-09-02 1989-03-08 Toshiba Corp Manufacture of silicon semiconductor substrate
US5349205A (en) * 1991-12-02 1994-09-20 Matsushita Electric Industrial Co., Ltd. Thin-film transistor array with anodic oxide for use in a liquid crystal display
DE4423067A1 (de) * 1994-07-01 1996-01-04 Daimler Benz Ag Verfahren zum Herstellen eines isolierten Halbleitersubstrats

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS53128285A (en) * 1977-04-14 1978-11-09 Nec Corp Semiconductor device and production of the same

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS53128285A (en) * 1977-04-14 1978-11-09 Nec Corp Semiconductor device and production of the same

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6461906A (en) * 1987-09-02 1989-03-08 Toshiba Corp Manufacture of silicon semiconductor substrate
US5349205A (en) * 1991-12-02 1994-09-20 Matsushita Electric Industrial Co., Ltd. Thin-film transistor array with anodic oxide for use in a liquid crystal display
DE4423067A1 (de) * 1994-07-01 1996-01-04 Daimler Benz Ag Verfahren zum Herstellen eines isolierten Halbleitersubstrats

Also Published As

Publication number Publication date
JPH0340512B2 (enrdf_load_stackoverflow) 1991-06-19

Similar Documents

Publication Publication Date Title
JP2857802B2 (ja) ２個の物体を一体に連結する方法
JP2856030B2 (ja) 結合ウエーハの製造方法
US3922705A (en) Dielectrically isolated integral silicon diaphram or other semiconductor product
JP3975634B2 (ja) 半導体ウェハの製作法
CN101106072B (zh) 直接接合电子学、光学或光电子学使用的两个基板的方法
JPH0834174B2 (ja) 半導体装置の製造方法
JPS61292934A (ja) 半導体素子の製造方法
JPH098124A (ja) 絶縁分離基板及びその製造方法
JPH0799239A (ja) 半導体装置及び半導体装置の製造方法
KR920022453A (ko) 단결정 실리콘 기판상에 화합물 반도체층이 형성된 기판의 제조 방법
JPS61220456A (ja) 半導体基板の製造方法
JPH0964319A (ja) Ｓｏｉ基板およびその製造方法
JP2801672B2 (ja) 半導体ウェハの製造方法
JPH02170514A (ja) 半導体装置製造のためのシリコンウェーハ相互接着方法
JPH05109678A (ja) Ｓｏｉ基板の製造方法
JPH04199632A (ja) Ｓｏｉウエハ及びその製造方法
JP3902321B2 (ja) 張り合わせ基板の製造方法
JP2850502B2 (ja) Ｓｏｉ基板の製造方法
KR920022452A (ko) 단결정 실리콘 기판상에 화합물 반도체층이 형성된 기판의 제조 방법
JPH10189405A (ja) 直接接合シリコン基板の作製方法
JPS60236243A (ja) 半導体基板の製造方法
JP2874463B2 (ja) 半導体装置の製造方法
JP2584639B2 (ja) 半導体基板の製造方法
JPH0521765A (ja) 半導体基板の製造方法
JP2581531B2 (ja) 半導体装置の製造方法