JPH0340512B2 - - Google Patents

Info

Publication number
JPH0340512B2
JPH0340512B2 JP60060987A JP6098785A JPH0340512B2 JP H0340512 B2 JPH0340512 B2 JP H0340512B2 JP 60060987 A JP60060987 A JP 60060987A JP 6098785 A JP6098785 A JP 6098785A JP H0340512 B2 JPH0340512 B2 JP H0340512B2
Authority
JP
Japan
Prior art keywords
silicon nitride
semiconductor substrate
nitride film
layer
nitride layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP60060987A
Other languages
English (en)
Japanese (ja)
Other versions
JPS61220456A (ja
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP60060987A priority Critical patent/JPS61220456A/ja
Publication of JPS61220456A publication Critical patent/JPS61220456A/ja
Publication of JPH0340512B2 publication Critical patent/JPH0340512B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates

Landscapes

  • Recrystallisation Techniques (AREA)
JP60060987A 1985-03-27 1985-03-27 半導体基板の製造方法 Granted JPS61220456A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP60060987A JPS61220456A (ja) 1985-03-27 1985-03-27 半導体基板の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP60060987A JPS61220456A (ja) 1985-03-27 1985-03-27 半導体基板の製造方法

Publications (2)

Publication Number Publication Date
JPS61220456A JPS61220456A (ja) 1986-09-30
JPH0340512B2 true JPH0340512B2 (enrdf_load_stackoverflow) 1991-06-19

Family

ID=13158291

Family Applications (1)

Application Number Title Priority Date Filing Date
JP60060987A Granted JPS61220456A (ja) 1985-03-27 1985-03-27 半導体基板の製造方法

Country Status (1)

Country Link
JP (1) JPS61220456A (enrdf_load_stackoverflow)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2703231B2 (ja) * 1987-09-02 1998-01-26 株式会社東芝 シリコン半導体基板の製造方法
EP0545327A1 (en) * 1991-12-02 1993-06-09 Matsushita Electric Industrial Co., Ltd. Thin-film transistor array for use in a liquid crystal display
DE4423067C2 (de) * 1994-07-01 1996-05-09 Daimler Benz Ag Verfahren zum Herstellen eines isolierten Halbleitersubstrats

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS53128285A (en) * 1977-04-14 1978-11-09 Nec Corp Semiconductor device and production of the same

Also Published As

Publication number Publication date
JPS61220456A (ja) 1986-09-30

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