JPS61216375A - 半導体発光装置の製造方法 - Google Patents

半導体発光装置の製造方法

Info

Publication number
JPS61216375A
JPS61216375A JP60027036A JP2703685A JPS61216375A JP S61216375 A JPS61216375 A JP S61216375A JP 60027036 A JP60027036 A JP 60027036A JP 2703685 A JP2703685 A JP 2703685A JP S61216375 A JPS61216375 A JP S61216375A
Authority
JP
Japan
Prior art keywords
ridge
electrode material
temperature
layer
ohmic electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP60027036A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0213944B2 (OSRAM
Inventor
Tatsuyuki Sanada
真田　達行
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP60027036A priority Critical patent/JPS61216375A/ja
Publication of JPS61216375A publication Critical patent/JPS61216375A/ja
Publication of JPH0213944B2 publication Critical patent/JPH0213944B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Led Devices (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Semiconductor Lasers (AREA)
JP60027036A 1985-02-14 1985-02-14 半導体発光装置の製造方法 Granted JPS61216375A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP60027036A JPS61216375A (ja) 1985-02-14 1985-02-14 半導体発光装置の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP60027036A JPS61216375A (ja) 1985-02-14 1985-02-14 半導体発光装置の製造方法

Publications (2)

Publication Number Publication Date
JPS61216375A true JPS61216375A (ja) 1986-09-26
JPH0213944B2 JPH0213944B2 (OSRAM) 1990-04-05

Family

ID=12209838

Family Applications (1)

Application Number Title Priority Date Filing Date
JP60027036A Granted JPS61216375A (ja) 1985-02-14 1985-02-14 半導体発光装置の製造方法

Country Status (1)

Country Link
JP (1) JPS61216375A (OSRAM)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04247670A (ja) * 1990-10-04 1992-09-03 Telefunken Electronic Gmbh 半導体装置
JP2005167118A (ja) * 2003-12-05 2005-06-23 Sharp Corp 窒化ガリウム系半導体レーザ及びその製造方法
JP2010287913A (ja) * 2010-08-25 2010-12-24 Sharp Corp 窒化ガリウム系半導体レーザ及びその製造方法

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04247670A (ja) * 1990-10-04 1992-09-03 Telefunken Electronic Gmbh 半導体装置
JP2005167118A (ja) * 2003-12-05 2005-06-23 Sharp Corp 窒化ガリウム系半導体レーザ及びその製造方法
JP2010287913A (ja) * 2010-08-25 2010-12-24 Sharp Corp 窒化ガリウム系半導体レーザ及びその製造方法

Also Published As

Publication number Publication date
JPH0213944B2 (OSRAM) 1990-04-05

Similar Documents

Publication Publication Date Title
EP0450255B1 (en) Process for forming the ridge structure of a self-aligned semiconductor laser
JP2935415B2 (ja) 半導体構造
US4080245A (en) Process for manufacturing a gallium phosphide electroluminescent device
KR19980058397A (ko) Rwg 레이저 다이오드 및 그 제조 방법
JPS61216375A (ja) 半導体発光装置の製造方法
JPS54152879A (en) Structure of semiconductor laser element and its manufacture
JPS62128586A (ja) 光電子集積回路の製造方法
JPS6223191A (ja) リツジ型半導体レ−ザ装置の製造方法
KR910005392B1 (ko) 접합전류 제한 영역을 갖는 이중 헤테로 접합형 발광다이오드의 제조방법
JPS6258692A (ja) 半導体発光装置の製造方法
KR100396675B1 (ko) 플라즈마 처리를 이용한 청색 반도체 레이저의 제조 방법
JPH0213943B2 (OSRAM)
JPS6215876A (ja) 半導体発光装置の製造方法
KR100261247B1 (ko) 레이저 다이오드의 제조방법
KR100289730B1 (ko) 반도체레이저소자의제조방법
JPH04329688A (ja) リッジ導波路型半導体レーザ素子の製作方法
JPS5748286A (en) Manufacture of buried hetero structured semiconductor laser
KR100259006B1 (ko) 반도체 레이저소자의 제조방법
JPS61284985A (ja) 半導体レ−ザ装置の作製方法
JPH0578196B2 (OSRAM)
JPS59168687A (ja) 半導体レ−ザ及びその製造方法
JPH0282679A (ja) 半導体発光装置の製造方法
JPS6459981A (en) Manufacture of semiconductor laser
KR20040100674A (ko) 수직공진 표면발광 레이저 다이오드 및 그 제조방법
JPS5624995A (en) Manufacture of semiconductor laser