JPS6121515A - 半導体集積回路装置 - Google Patents
半導体集積回路装置Info
- Publication number
- JPS6121515A JPS6121515A JP20176684A JP20176684A JPS6121515A JP S6121515 A JPS6121515 A JP S6121515A JP 20176684 A JP20176684 A JP 20176684A JP 20176684 A JP20176684 A JP 20176684A JP S6121515 A JPS6121515 A JP S6121515A
- Authority
- JP
- Japan
- Prior art keywords
- voltage
- difference
- gate
- reference voltage
- semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- G—PHYSICS
- G05—CONTROLLING; REGULATING
- G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
- G05F3/00—Non-retroactive systems for regulating electric variables by using an uncontrolled element, or an uncontrolled combination of elements, such element or such combination having self-regulating properties
- G05F3/02—Regulating voltage or current
- G05F3/08—Regulating voltage or current wherein the variable is DC
- G05F3/10—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics
- G05F3/16—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics being semiconductor devices
- G05F3/20—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations
- G05F3/24—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations wherein the transistors are of the field-effect type only
- G05F3/242—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations wherein the transistors are of the field-effect type only with compensation for device parameters, e.g. channel width modulation, threshold voltage, processing, or external variations, e.g. temperature, loading, supply voltage
- G05F3/245—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations wherein the transistors are of the field-effect type only with compensation for device parameters, e.g. channel width modulation, threshold voltage, processing, or external variations, e.g. temperature, loading, supply voltage producing a voltage or current as a predetermined function of the temperature
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Nonlinear Science (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Radar, Positioning & Navigation (AREA)
- Automation & Control Theory (AREA)
- Control Of Electrical Variables (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP20176684A JPS6121515A (ja) | 1984-09-28 | 1984-09-28 | 半導体集積回路装置 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP20176684A JPS6121515A (ja) | 1984-09-28 | 1984-09-28 | 半導体集積回路装置 |
Related Parent Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP3924278A Division JPS54132753A (en) | 1978-03-08 | 1978-04-05 | Referential voltage generator and its application |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS6121515A true JPS6121515A (ja) | 1986-01-30 |
JPH0341843B2 JPH0341843B2 (enrdf_load_stackoverflow) | 1991-06-25 |
Family
ID=16446582
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP20176684A Granted JPS6121515A (ja) | 1984-09-28 | 1984-09-28 | 半導体集積回路装置 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6121515A (enrdf_load_stackoverflow) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6215352B1 (en) | 1998-01-28 | 2001-04-10 | Nec Corporation | Reference voltage generating circuit with MOS transistors having a floating gate |
JP2007128395A (ja) * | 2005-11-07 | 2007-05-24 | Ricoh Co Ltd | ハーフバンドギャップリファレンス回路 |
-
1984
- 1984-09-28 JP JP20176684A patent/JPS6121515A/ja active Granted
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6215352B1 (en) | 1998-01-28 | 2001-04-10 | Nec Corporation | Reference voltage generating circuit with MOS transistors having a floating gate |
JP2007128395A (ja) * | 2005-11-07 | 2007-05-24 | Ricoh Co Ltd | ハーフバンドギャップリファレンス回路 |
Also Published As
Publication number | Publication date |
---|---|
JPH0341843B2 (enrdf_load_stackoverflow) | 1991-06-25 |
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