JPS61210621A - 気相成長用サセプタ - Google Patents

気相成長用サセプタ

Info

Publication number
JPS61210621A
JPS61210621A JP5286085A JP5286085A JPS61210621A JP S61210621 A JPS61210621 A JP S61210621A JP 5286085 A JP5286085 A JP 5286085A JP 5286085 A JP5286085 A JP 5286085A JP S61210621 A JPS61210621 A JP S61210621A
Authority
JP
Japan
Prior art keywords
susceptor
outer periphery
vapor growth
inner periphery
cooling rate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP5286085A
Other languages
English (en)
Other versions
JP2514788B2 (ja
Inventor
Nobuo Kashiwagi
伸夫 柏木
Kotei Iwata
岩田　公弟
Shigeru Suzuki
繁 鈴木
Yoshihiro Miyanomae
宮之前　芳洋
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Shibaura Machine Co Ltd
Original Assignee
Toshiba Machine Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Machine Co Ltd filed Critical Toshiba Machine Co Ltd
Priority to JP60052860A priority Critical patent/JP2514788B2/ja
Publication of JPS61210621A publication Critical patent/JPS61210621A/ja
Application granted granted Critical
Publication of JP2514788B2 publication Critical patent/JP2514788B2/ja
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67109—Apparatus for thermal treatment mainly by convection
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/46—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68735—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by edge profile or support profile
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68764—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a movable susceptor, stage or support, others than those only rotating on their own vertical axis, e.g. susceptors on a rotating caroussel
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68771—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by supporting more than one semiconductor substrate

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Power Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Physics & Mathematics (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)

Abstract

(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。

Description

【発明の詳細な説明】 〔発明の属する技術分野〕 本発明は半導体基板或いは絶縁体基板（以下これらをウ
ェハという）上に半導体材料を気相成長させる装置のサ
セプタに関する。
〔・従来技術〕
従来の縦型気相成長装置の一例を第２図により述べる。
ベースプレート１１とこれに載置された石英ベルジャ１
２にエリ反応室１３が形成されており、この反応室１３
内にあってサセプタ支え１４により支持されるサセプタ
１５の上面には複数のウェハ１６が載置されている。サ
セプタ１５は′を動機１７から歯車機構１８を経て駆動
軸１９とサセプタ支え１４により回転駆動されるように
なっており、その下面にはワークコイル２０が設けであ
る。また石英ベルジャ１２の外周にはこれを覆う金属ベ
ルジャ２１が配置されている。
ウェハ１６はワークコイル２０に給電することによりサ
セプタ１５が高周波誘導により赤熱されその熱を受けて
所定温度に加熱されると共に、ノズル２２から・キャリ
アカスに混合された反応ガスを噴出させることによりそ
の上面に半導体の結晶を成長させている。このとき石英
ベルジャ１２は加熱されるため金属ベルジヤ２１０須部
に孔２３を設け、この孔２３から適当なガス例えば窒素
ガス等を流入させて石英ベルジャ１２を冷却しそのＦＥ
３ｒｋＩに反応ガスが付着することを防止して論る。
なお２５はペースペレー）１１にあけたガス流出用の複
数の孔である。
ワークコイル２０とサセプタ１５とが平行に保たれた状
態で高周波電力全印加した場合、第３図に示す如くサセ
プタ外周部の電力密度は内周部に比較して大きい。ここ
でＹ軸はサセプタ１５に銹導される電力密度：Ｒ＠はサ
セプタ１５の径方向、１点はサセプタ内周面、０点はサ
セプタ外周面金それぞれ示す。したがってサセプタ１５
を成長温度例えば１１５０℃に保持するためＫは一般的
に電力のバランスをとるために第２図に示す如く内周部
はサセプタ中間部に比較してワークコイル２゜やはり、
第２図に示す如（、中間部に比較してワークコイル２０
をサセプタ１５に近づけて′電力の効果をあげている。
しかしながら、前記のエラなサセプタ１５Ｖｃ対するワ
ークコイル２０の位置の調整によるサセプタ１５の均熱
化は、ワークコイル２０に供給する高周波電力の大きさ
［工って変化する。そこで、サセプタ１５が所定の気相
成長温度まで加熱されて安定状態にあり、ワークコイル
２０への供給電力が比較的低い状態で均熱化する工う［
設定すると、それより相当尚い電力を供給する昇温時に
は均熱性が得られず、電力密度が大きくなる外周部の方
がより強く発熱する。したがって、昇温過程においては
、外周部は赤熱されているにもかかわらず内周部はそれ
程昇温せずウェハの温度が部分化にともない気相成長終
了後にウエノ・１６を取り出す友めの冷却に長時間を必
要とし、単位時間当りの処理枚数は少なく大形化の利点
が十分に発揮できなかつ友。
〔発明の目的〕
本発明はこのような欠点を除去したものでその目的は、
昇温過程においても各部の均熱性をとることにより製品
の品質を高めると共に気相成長後の冷却時間を短縮して
生産性を高くした気相成長用サセプタを提供することに
ある。
〔発明の要点〕
本発明の気相成長用サセプタは、外周部を厚く内周部に
向ってその厚さを漸減するようにしたことを特徴にして
いる。
〔発明の実施例〕
本発明の気相成長装置は従来例である第２図においてサ
セプタ１５以外は同一である。以下本発明の一実施例を
示した第１図について説明する。
サセプタ３１は外周部Ａが従来通りの厚さであるが内周
部に向って下面にその厚さを漸減する形状にしである。
このようにすることにエリワークコイル２０の電力密度
の大きい外周部Ａは厚＜Ｉｌｌｌｌ層密度さい内周部Ｂ
は薄いため供給電力が高い昇温時にもほぼ均一に加熱さ
れる。
サセプタ３１が所定温度に達すると、以後は該所定温度
に保持するのみであるため、供給電力が低下し加熱の強
弱の割合が少な（なり、相対的にサセプタ３１の外周部
Ａの加熱が弱くなるが、所定温度に達した後の保持のみ
であり、この外周部Ａは厚いので冷却されにくいためか
、その後の温度安定時における外周部Ａの温度低下はほ
とんど現われない。なお、実際には、昇温時と所定温度
の安定時との両方を満足するようにワークコイル２０の
位置が設定される。
気相成長後サセプタ３１をキャリアガスにより冷却する
とき、外周部Ａは排気孔２５があるため早く一万冷却速
度の遅かった内周部Ｂは薄いため冷却速度は早くなり結
局全体的な冷却速度は早（なる。
なお前記説明ではサセプタ１５＃Ｓｔ外局部Ａで厚く内
周部ＢＫ向って下面を直線的に薄（したが、階段状に薄
くしても工く、さらに弧状に薄くしてもよい。また下面
をベースプレー）１１と平行にして上面を内周部Ｂに向
って薄くしてもよい。
〔発明の効果〕
本発明の気相成長用サセプタは以上説明したように、サ
セプタの厚さに変化をもたせる即ち外周部を厚く内周部
を薄くするという極めて簡単な構成でありながら、サセ
プタ昇温時各部は均一に加熱さ詐るため熱応力の差はな
くなり、従って結晶欠陥であるスリップの発生を押え高
品質の気相成長が可能になった。さらに気相成長終了後
のサセプタ冷却も早くなり生産性が上昇する利点を有す
る。
−６＝
【図面の簡単な説明】
第１図は本発明の一実施例の断面図、第２図は従来の気
相成長装置の断面図、第３図は従来の一定厚さのサセプ
タに対しワークコイルを一定間隔で位置させた場合のサ
セプタの半径方向の温度分布を示す図である。 １１・・・ベースプレート、１２・・・石英ヘルジャ、
２１・・・金鵬ベルジャ、２２・・・ノズル、３１・・
・サセプタ。

Claims (1)

    【特許請求の範囲】
  1. 外周部を厚く内周部に向つてその厚さを漸減するように
    した気相成長用サセプタ。
JP60052860A 1985-03-15 1985-03-15 気相成長用サセプタ Expired - Lifetime JP2514788B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP60052860A JP2514788B2 (ja) 1985-03-15 1985-03-15 気相成長用サセプタ

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP60052860A JP2514788B2 (ja) 1985-03-15 1985-03-15 気相成長用サセプタ

Publications (2)

Publication Number Publication Date
JPS61210621A true JPS61210621A (ja) 1986-09-18
JP2514788B2 JP2514788B2 (ja) 1996-07-10

Family

ID=12926616

Family Applications (1)

Application Number Title Priority Date Filing Date
JP60052860A Expired - Lifetime JP2514788B2 (ja) 1985-03-15 1985-03-15 気相成長用サセプタ

Country Status (1)

Country Link
JP (1) JP2514788B2 (ja)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5780062B2 (ja) 2011-08-30 2015-09-16 東京エレクトロン株式会社 基板処理装置及び成膜装置

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60170233A (ja) * 1984-02-15 1985-09-03 Toshiba Corp 半導体製造装置

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60170233A (ja) * 1984-02-15 1985-09-03 Toshiba Corp 半導体製造装置

Also Published As

Publication number Publication date
JP2514788B2 (ja) 1996-07-10

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