JPS61205697A - ３−５族化合物半導体の単結晶成長装置 - Google Patents
３−５族化合物半導体の単結晶成長装置Info
- Publication number
- JPS61205697A JPS61205697A JP4530785A JP4530785A JPS61205697A JP S61205697 A JPS61205697 A JP S61205697A JP 4530785 A JP4530785 A JP 4530785A JP 4530785 A JP4530785 A JP 4530785A JP S61205697 A JPS61205697 A JP S61205697A
- Authority
- JP
- Japan
- Prior art keywords
- crystal
- melt
- single crystal
- crystal growth
- gaas
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000013078 crystal Substances 0.000 title claims abstract description 44
- 150000001875 compounds Chemical class 0.000 title claims description 10
- 239000004065 semiconductor Substances 0.000 title claims description 10
- 239000000155 melt Substances 0.000 claims abstract description 12
- 238000000034 method Methods 0.000 claims abstract description 10
- 239000007788 liquid Substances 0.000 claims description 4
- 239000000203 mixture Substances 0.000 abstract description 9
- 229910001218 Gallium arsenide Inorganic materials 0.000 abstract description 8
- 229910052785 arsenic Inorganic materials 0.000 abstract description 5
- 230000015572 biosynthetic process Effects 0.000 abstract description 5
- 238000003786 synthesis reaction Methods 0.000 abstract description 5
- 238000010438 heat treatment Methods 0.000 abstract description 4
- 238000005259 measurement Methods 0.000 abstract 1
- 230000007547 defect Effects 0.000 description 7
- 235000012431 wafers Nutrition 0.000 description 7
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 6
- 238000010586 diagram Methods 0.000 description 5
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 4
- 229910021478 group 5 element Inorganic materials 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 2
- 238000002347 injection Methods 0.000 description 2
- 239000007924 injection Substances 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 239000000565 sealant Substances 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- AGJBKFAPBKOEGA-UHFFFAOYSA-M 2-methoxyethylmercury(1+);acetate Chemical compound COCC[Hg]OC(C)=O AGJBKFAPBKOEGA-UHFFFAOYSA-M 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 229910052810 boron oxide Inorganic materials 0.000 description 1
- 101150106967 cgaa gene Proteins 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- JKWMSGQKBLHBQQ-UHFFFAOYSA-N diboron trioxide Chemical compound O=BOB=O JKWMSGQKBLHBQQ-UHFFFAOYSA-N 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 238000002513 implantation Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 230000005693 optoelectronics Effects 0.000 description 1
- 238000001028 reflection method Methods 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 238000007711 solidification Methods 0.000 description 1
- 230000008023 solidification Effects 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4530785A JPS61205697A (ja) | 1985-03-07 | 1985-03-07 | ３−５族化合物半導体の単結晶成長装置 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4530785A JPS61205697A (ja) | 1985-03-07 | 1985-03-07 | ３−５族化合物半導体の単結晶成長装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS61205697A true JPS61205697A (ja) | 1986-09-11 |
| JPH0413319B2 JPH0413319B2 (enrdf_load_stackoverflow) | 1992-03-09 |
Family
ID=12715655
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP4530785A Granted JPS61205697A (ja) | 1985-03-07 | 1985-03-07 | ３−５族化合物半導体の単結晶成長装置 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS61205697A (enrdf_load_stackoverflow) |
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS61227985A (ja) * | 1985-04-02 | 1986-10-11 | Hitachi Cable Ltd | 化合物半導体単結晶の製造方法 |
| JPS6230689A (ja) * | 1985-08-02 | 1987-02-09 | Mitsubishi Metal Corp | ３−５族化合物半導体結晶の成長方法および装置 |
| JPS63147898A (ja) * | 1986-12-12 | 1988-06-20 | Nippon Telegr & Teleph Corp <Ntt> | 化合物半導体単結晶の育成方法 |
| JPH0255288A (ja) * | 1988-08-19 | 1990-02-23 | Mitsubishi Metal Corp | 高解離圧化合物半導体単結晶成長方法及びその装置 |
| JPH0255289A (ja) * | 1988-08-19 | 1990-02-23 | Mitsubishi Metal Corp | 高解離圧化合物半導体単結晶成長方法及びその装置 |
| US5074953A (en) * | 1988-08-19 | 1991-12-24 | Mitsubishi Materials Corporation | Method for monocrystalline growth of dissociative compound semiconductors |
| US5091043A (en) * | 1988-08-19 | 1992-02-25 | Mitsubishi Materials Corporation | Method for monocrystaline growth of dissociative compound semiconductors |
| JP2001342094A (ja) * | 2000-05-31 | 2001-12-11 | Komatsu Electronic Metals Co Ltd | 砒素ドーピングが確実に行われるｃｚ法単結晶引上げ装置及び方法 |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5988393A (ja) * | 1982-11-12 | 1984-05-22 | Agency Of Ind Science & Technol | ３−５族化合物単結晶の製造方法 |
| JPS59164699A (ja) * | 1983-03-10 | 1984-09-17 | Agency Of Ind Science & Technol | ガリウム砒素単結晶の製造方法 |
-
1985
- 1985-03-07 JP JP4530785A patent/JPS61205697A/ja active Granted
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5988393A (ja) * | 1982-11-12 | 1984-05-22 | Agency Of Ind Science & Technol | ３−５族化合物単結晶の製造方法 |
| JPS59164699A (ja) * | 1983-03-10 | 1984-09-17 | Agency Of Ind Science & Technol | ガリウム砒素単結晶の製造方法 |
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS61227985A (ja) * | 1985-04-02 | 1986-10-11 | Hitachi Cable Ltd | 化合物半導体単結晶の製造方法 |
| JPS6230689A (ja) * | 1985-08-02 | 1987-02-09 | Mitsubishi Metal Corp | ３−５族化合物半導体結晶の成長方法および装置 |
| JPS63147898A (ja) * | 1986-12-12 | 1988-06-20 | Nippon Telegr & Teleph Corp <Ntt> | 化合物半導体単結晶の育成方法 |
| JPH0255288A (ja) * | 1988-08-19 | 1990-02-23 | Mitsubishi Metal Corp | 高解離圧化合物半導体単結晶成長方法及びその装置 |
| JPH0255289A (ja) * | 1988-08-19 | 1990-02-23 | Mitsubishi Metal Corp | 高解離圧化合物半導体単結晶成長方法及びその装置 |
| US5074953A (en) * | 1988-08-19 | 1991-12-24 | Mitsubishi Materials Corporation | Method for monocrystalline growth of dissociative compound semiconductors |
| US5091043A (en) * | 1988-08-19 | 1992-02-25 | Mitsubishi Materials Corporation | Method for monocrystaline growth of dissociative compound semiconductors |
| JP2001342094A (ja) * | 2000-05-31 | 2001-12-11 | Komatsu Electronic Metals Co Ltd | 砒素ドーピングが確実に行われるｃｚ法単結晶引上げ装置及び方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0413319B2 (enrdf_load_stackoverflow) | 1992-03-09 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US5030315A (en) | Methods of manufacturing compound semiconductor crystals and apparatus for the same | |
| JPS61205697A (ja) | ３−５族化合物半導体の単結晶成長装置 | |
| Fewster et al. | The effect of silicon doping on the lattice parameter of gallium arsenide grown by liquid-phase epitaxy, vapour-phase epitaxy and gradient-freeze techniques | |
| US5456206A (en) | Method for two-dimensional epitaxial growth of III-V compound semiconductors | |
| Müller | InP-the basic material of integrated optoelectronics for fiber communication systems | |
| JPH0639355B2 (ja) | 化合物半導体単結晶の製造方法 | |
| Gürbulak | Growth and absorption properties of Dy-doped and undoped p-type TlGaSe2 | |
| GB2189166A (en) | A single crystal of IIIb-Vb compound, particularly GaAs, and method for producing the same | |
| JP2737990B2 (ja) | 化合物半導体単結晶製造装置 | |
| JPH042559B2 (enrdf_load_stackoverflow) | ||
| JPH0670973B2 (ja) | 化合物半導体のエピタキシヤルウエハ | |
| KR940006709B1 (ko) | GaAs단결정 및 그의 제조방법 | |
| JP2736343B2 (ja) | 半絶縁性ＩｎＰ単結晶の製造方法 | |
| US6630697B2 (en) | GaAs single crystal as well as method of producing the same, and semiconductor device utilizing the GaAs single crystal | |
| JPS57115821A (en) | Manufacture of semiconductor device | |
| JPS63201097A (ja) | 半絶縁性ガリウム砒素単結晶 | |
| KR960005511B1 (ko) | GaAs단결정 성장방법 | |
| KR940006712B1 (ko) | GaAs단결정을 이용한 반도체장치. | |
| JP2705682B2 (ja) | 分子線結晶成長方法 | |
| JPH01138190A (ja) | ３−５族化合物半導体単結晶の製造方法 | |
| JPS60155599A (ja) | ３−５族混晶結晶の成長方法 | |
| Akai | Basic High-Technology Laboratories, Sumitomo Electric Ind., Ltd. | |
| JPS60260500A (ja) | 低転位密度のＩｎＰ単結晶とその製造方法 | |
| JPH03159998A (ja) | Ｉｎ添加無転位引上げガリウム砒素単結晶 | |
| DE4021252A1 (de) | Gaas-einkristall mit geringer versetzungsdichte und verfahren zum zuechten desselben |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| LAPS | Cancellation because of no payment of annual fees |