JPH0413319B2 - - Google Patents

Info

Publication number
JPH0413319B2
JPH0413319B2 JP60045307A JP4530785A JPH0413319B2 JP H0413319 B2 JPH0413319 B2 JP H0413319B2 JP 60045307 A JP60045307 A JP 60045307A JP 4530785 A JP4530785 A JP 4530785A JP H0413319 B2 JPH0413319 B2 JP H0413319B2
Authority
JP
Japan
Prior art keywords
crystal
melt
group
weight
weight sensor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP60045307A
Other languages
English (en)
Japanese (ja)
Other versions
JPS61205697A (ja
Inventor
Takao Matsumura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Electric Co Ltd filed Critical Nippon Electric Co Ltd
Priority to JP4530785A priority Critical patent/JPS61205697A/ja
Publication of JPS61205697A publication Critical patent/JPS61205697A/ja
Publication of JPH0413319B2 publication Critical patent/JPH0413319B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
JP4530785A 1985-03-07 1985-03-07 ３−５族化合物半導体の単結晶成長装置 Granted JPS61205697A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP4530785A JPS61205697A (ja) 1985-03-07 1985-03-07 ３−５族化合物半導体の単結晶成長装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP4530785A JPS61205697A (ja) 1985-03-07 1985-03-07 ３−５族化合物半導体の単結晶成長装置

Publications (2)

Publication Number Publication Date
JPS61205697A JPS61205697A (ja) 1986-09-11
JPH0413319B2 true JPH0413319B2 (enrdf_load_stackoverflow) 1992-03-09

Family

ID=12715655

Family Applications (1)

Application Number Title Priority Date Filing Date
JP4530785A Granted JPS61205697A (ja) 1985-03-07 1985-03-07 ３−５族化合物半導体の単結晶成長装置

Country Status (1)

Country Link
JP (1) JPS61205697A (enrdf_load_stackoverflow)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61227985A (ja) * 1985-04-02 1986-10-11 Hitachi Cable Ltd 化合物半導体単結晶の製造方法
JPS6230689A (ja) * 1985-08-02 1987-02-09 Mitsubishi Metal Corp ３−５族化合物半導体結晶の成長方法および装置
JPS63147898A (ja) * 1986-12-12 1988-06-20 Nippon Telegr & Teleph Corp <Ntt> 化合物半導体単結晶の育成方法
JPH0255288A (ja) * 1988-08-19 1990-02-23 Mitsubishi Metal Corp 高解離圧化合物半導体単結晶成長方法及びその装置
DE68917052T2 (de) * 1988-08-19 1994-12-22 Mitsubishi Materials Corp Verfahren zur Einkristallzüchtung von zersetzbaren Halbleiter-Verbindungen.
JPH0255289A (ja) * 1988-08-19 1990-02-23 Mitsubishi Metal Corp 高解離圧化合物半導体単結晶成長方法及びその装置
DE68917054T2 (de) * 1988-08-19 1995-01-05 Mitsubishi Materials Corp Verfahren zur Einkristallzüchtung von zersetzbaren Halbleiter-Verbindungen.
JP4530483B2 (ja) * 2000-05-31 2010-08-25 Ｓｕｍｃｏ Ｔｅｃｈｘｉｖ株式会社 Ｃｚ法単結晶引上げ装置

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS606919B2 (ja) * 1982-11-12 1985-02-21 工業技術院長 ３−５族化合物単結晶の製造方法
JPS59164699A (ja) * 1983-03-10 1984-09-17 Agency Of Ind Science & Technol ガリウム砒素単結晶の製造方法

Also Published As

Publication number Publication date
JPS61205697A (ja) 1986-09-11

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