JPS6243959B2 - - Google Patents

Info

Publication number
JPS6243959B2
JPS6243959B2 JP5792783A JP5792783A JPS6243959B2 JP S6243959 B2 JPS6243959 B2 JP S6243959B2 JP 5792783 A JP5792783 A JP 5792783A JP 5792783 A JP5792783 A JP 5792783A JP S6243959 B2 JPS6243959 B2 JP S6243959B2
Authority
JP
Japan
Prior art keywords
crystal
change pattern
heater
diameter
time
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP5792783A
Other languages
English (en)
Japanese (ja)
Other versions
JPS59184797A (ja
Inventor
Tooru Katsumata
Kazutaka Terajima
Hiroaki Nakajima
Tsuguo Fukuda
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
National Institute of Advanced Industrial Science and Technology AIST
Original Assignee
Agency of Industrial Science and Technology
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Agency of Industrial Science and Technology filed Critical Agency of Industrial Science and Technology
Priority to JP5792783A priority Critical patent/JPS59184797A/ja
Priority to GB08408563A priority patent/GB2140704B/en
Priority to US06/596,705 priority patent/US4586979A/en
Publication of JPS59184797A publication Critical patent/JPS59184797A/ja
Publication of JPS6243959B2 publication Critical patent/JPS6243959B2/ja
Granted legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/20—Controlling or regulating
    • C30B15/22—Stabilisation or shape controlling of the molten zone near the pulled crystal; Controlling the section of the crystal
    • C30B15/28—Stabilisation or shape controlling of the molten zone near the pulled crystal; Controlling the section of the crystal using weight changes of the crystal or the melt, e.g. flotation methods

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
JP5792783A 1983-04-04 1983-04-04 ３−５族化合物半導体単結晶の製造方法 Granted JPS59184797A (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP5792783A JPS59184797A (ja) 1983-04-04 1983-04-04 ３−５族化合物半導体単結晶の製造方法
GB08408563A GB2140704B (en) 1983-04-04 1984-04-03 Control of crystal pulling
US06/596,705 US4586979A (en) 1983-04-04 1984-04-04 Method for manufacture of III-V group compound semiconductor single crystal

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP5792783A JPS59184797A (ja) 1983-04-04 1983-04-04 ３−５族化合物半導体単結晶の製造方法

Publications (2)

Publication Number Publication Date
JPS59184797A JPS59184797A (ja) 1984-10-20
JPS6243959B2 true JPS6243959B2 (enrdf_load_stackoverflow) 1987-09-17

Family

ID=13069634

Family Applications (1)

Application Number Title Priority Date Filing Date
JP5792783A Granted JPS59184797A (ja) 1983-04-04 1983-04-04 ３−５族化合物半導体単結晶の製造方法

Country Status (1)

Country Link
JP (1) JPS59184797A (enrdf_load_stackoverflow)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63270391A (ja) * 1987-04-27 1988-11-08 Sumitomo Electric Ind Ltd Ｌｅｃ法による単結晶引き上げ方法
GB8715327D0 (en) * 1987-06-30 1987-08-05 Secr Defence Growth of semiconductor singel crystals
JP5716689B2 (ja) * 2012-02-06 2015-05-13 信越半導体株式会社 シリコン単結晶の製造方法及びシリコン単結晶の製造装置

Also Published As

Publication number Publication date
JPS59184797A (ja) 1984-10-20

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