JPS59184797A - ３−５族化合物半導体単結晶の製造方法 - Google Patents
３−５族化合物半導体単結晶の製造方法Info
- Publication number
- JPS59184797A JPS59184797A JP5792783A JP5792783A JPS59184797A JP S59184797 A JPS59184797 A JP S59184797A JP 5792783 A JP5792783 A JP 5792783A JP 5792783 A JP5792783 A JP 5792783A JP S59184797 A JPS59184797 A JP S59184797A
- Authority
- JP
- Japan
- Prior art keywords
- crystal
- pattern
- heater
- change pattern
- change
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000013078 crystal Substances 0.000 title claims abstract description 77
- 150000001875 compounds Chemical class 0.000 title claims abstract description 9
- 239000004065 semiconductor Substances 0.000 title claims abstract description 8
- 238000010438 heat treatment Methods 0.000 claims abstract description 15
- 238000004519 manufacturing process Methods 0.000 claims description 4
- 239000002994 raw material Substances 0.000 claims description 3
- 238000000034 method Methods 0.000 abstract description 12
- 238000005259 measurement Methods 0.000 abstract description 2
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 11
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 10
- 239000007788 liquid Substances 0.000 description 5
- 230000007547 defect Effects 0.000 description 3
- JKWMSGQKBLHBQQ-UHFFFAOYSA-N diboron trioxide Chemical compound O=BOB=O JKWMSGQKBLHBQQ-UHFFFAOYSA-N 0.000 description 3
- 239000000565 sealant Substances 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- HZXMRANICFIONG-UHFFFAOYSA-N gallium phosphide Chemical compound [Ga]#P HZXMRANICFIONG-UHFFFAOYSA-N 0.000 description 2
- WPYVAWXEWQSOGY-UHFFFAOYSA-N indium antimonide Chemical compound [Sb]#[In] WPYVAWXEWQSOGY-UHFFFAOYSA-N 0.000 description 2
- UJXZVRRCKFUQKG-UHFFFAOYSA-K indium(3+);phosphate Chemical compound [In+3].[O-]P([O-])([O-])=O UJXZVRRCKFUQKG-UHFFFAOYSA-K 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 229910052582 BN Inorganic materials 0.000 description 1
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 description 1
- 229910005540 GaP Inorganic materials 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 241000860832 Yoda Species 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 229910052810 boron oxide Inorganic materials 0.000 description 1
- 238000004364 calculation method Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000004836 empirical method Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 239000013307 optical fiber Substances 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 235000012431 wafers Nutrition 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/20—Controlling or regulating
- C30B15/22—Stabilisation or shape controlling of the molten zone near the pulled crystal; Controlling the section of the crystal
- C30B15/28—Stabilisation or shape controlling of the molten zone near the pulled crystal; Controlling the section of the crystal using weight changes of the crystal or the melt, e.g. flotation methods
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Priority Applications (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5792783A JPS59184797A (ja) | 1983-04-04 | 1983-04-04 | ３−５族化合物半導体単結晶の製造方法 |
| GB08408563A GB2140704B (en) | 1983-04-04 | 1984-04-03 | Control of crystal pulling |
| US06/596,705 US4586979A (en) | 1983-04-04 | 1984-04-04 | Method for manufacture of III-V group compound semiconductor single crystal |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5792783A JPS59184797A (ja) | 1983-04-04 | 1983-04-04 | ３−５族化合物半導体単結晶の製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS59184797A true JPS59184797A (ja) | 1984-10-20 |
| JPS6243959B2 JPS6243959B2 (enrdf_load_stackoverflow) | 1987-09-17 |
Family
ID=13069634
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP5792783A Granted JPS59184797A (ja) | 1983-04-04 | 1983-04-04 | ３−５族化合物半導体単結晶の製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS59184797A (enrdf_load_stackoverflow) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63270391A (ja) * | 1987-04-27 | 1988-11-08 | Sumitomo Electric Ind Ltd | Ｌｅｃ法による単結晶引き上げ方法 |
| US6294017B1 (en) * | 1987-06-30 | 2001-09-25 | The National Research Development Corporation | Growth of semiconductor single crystals |
| JP2013159525A (ja) * | 2012-02-06 | 2013-08-19 | Shin Etsu Handotai Co Ltd | シリコン単結晶の製造方法及びシリコン単結晶の製造装置 |
-
1983
- 1983-04-04 JP JP5792783A patent/JPS59184797A/ja active Granted
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63270391A (ja) * | 1987-04-27 | 1988-11-08 | Sumitomo Electric Ind Ltd | Ｌｅｃ法による単結晶引き上げ方法 |
| US6294017B1 (en) * | 1987-06-30 | 2001-09-25 | The National Research Development Corporation | Growth of semiconductor single crystals |
| JP2013159525A (ja) * | 2012-02-06 | 2013-08-19 | Shin Etsu Handotai Co Ltd | シリコン単結晶の製造方法及びシリコン単結晶の製造装置 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6243959B2 (enrdf_load_stackoverflow) | 1987-09-17 |
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