JPS6120369A - 半導体装置の製造方法 - Google Patents

半導体装置の製造方法

Info

Publication number
JPS6120369A
JPS6120369A JP59141590A JP14159084A JPS6120369A JP S6120369 A JPS6120369 A JP S6120369A JP 59141590 A JP59141590 A JP 59141590A JP 14159084 A JP14159084 A JP 14159084A JP S6120369 A JPS6120369 A JP S6120369A
Authority
JP
Japan
Prior art keywords
gate electrode
layer
substrate
impurity
insulating film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP59141590A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0460342B2 (cg-RX-API-DMAC7.html
Inventor
Yasuo Matsumoto
松元　保男
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Priority to JP59141590A priority Critical patent/JPS6120369A/ja
Publication of JPS6120369A publication Critical patent/JPS6120369A/ja
Publication of JPH0460342B2 publication Critical patent/JPH0460342B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
JP59141590A 1984-07-09 1984-07-09 半導体装置の製造方法 Granted JPS6120369A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP59141590A JPS6120369A (ja) 1984-07-09 1984-07-09 半導体装置の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59141590A JPS6120369A (ja) 1984-07-09 1984-07-09 半導体装置の製造方法

Publications (2)

Publication Number Publication Date
JPS6120369A true JPS6120369A (ja) 1986-01-29
JPH0460342B2 JPH0460342B2 (cg-RX-API-DMAC7.html) 1992-09-25

Family

ID=15295545

Family Applications (1)

Application Number Title Priority Date Filing Date
JP59141590A Granted JPS6120369A (ja) 1984-07-09 1984-07-09 半導体装置の製造方法

Country Status (1)

Country Link
JP (1) JPS6120369A (cg-RX-API-DMAC7.html)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5397722A (en) * 1994-03-15 1995-03-14 National Semiconductor Corporation Process for making self-aligned source/drain polysilicon or polysilicide contacts in field effect transistors
US5451532A (en) * 1994-03-15 1995-09-19 National Semiconductor Corp. Process for making self-aligned polysilicon base contact in a bipolar junction transistor

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5397722A (en) * 1994-03-15 1995-03-14 National Semiconductor Corporation Process for making self-aligned source/drain polysilicon or polysilicide contacts in field effect transistors
US5451532A (en) * 1994-03-15 1995-09-19 National Semiconductor Corp. Process for making self-aligned polysilicon base contact in a bipolar junction transistor
US5581114A (en) * 1994-03-15 1996-12-03 National Semiconductor Corporation Self-aligned polysilicon base contact in a bipolar junction transistor

Also Published As

Publication number Publication date
JPH0460342B2 (cg-RX-API-DMAC7.html) 1992-09-25

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Legal Events

Date Code Title Description
LAPS Cancellation because of no payment of annual fees