JPS61203662A - 半導体集積回路 - Google Patents
半導体集積回路Info
- Publication number
- JPS61203662A JPS61203662A JP60044318A JP4431885A JPS61203662A JP S61203662 A JPS61203662 A JP S61203662A JP 60044318 A JP60044318 A JP 60044318A JP 4431885 A JP4431885 A JP 4431885A JP S61203662 A JPS61203662 A JP S61203662A
- Authority
- JP
- Japan
- Prior art keywords
- groove
- semiconductor
- filled
- semiconductor element
- polysilicon
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 42
- 239000000758 substrate Substances 0.000 claims abstract description 19
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims abstract description 15
- 229920005591 polysilicon Polymers 0.000 claims abstract description 15
- 239000004020 conductor Substances 0.000 claims abstract description 6
- 229910052751 metal Inorganic materials 0.000 claims abstract description 3
- 239000002184 metal Substances 0.000 claims abstract description 3
- 239000012212 insulator Substances 0.000 claims description 4
- 230000005260 alpha ray Effects 0.000 abstract description 13
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 abstract description 5
- 229910052796 boron Inorganic materials 0.000 abstract description 5
- 238000000034 method Methods 0.000 abstract description 5
- 239000011810 insulating material Substances 0.000 abstract description 3
- 150000002739 metals Chemical class 0.000 abstract 1
- 150000004767 nitrides Chemical class 0.000 description 6
- 239000003990 capacitor Substances 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 230000000694 effects Effects 0.000 description 3
- 230000006872 improvement Effects 0.000 description 3
- 230000010354 integration Effects 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 230000005684 electric field Effects 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 239000005022 packaging material Substances 0.000 description 2
- 239000000941 radioactive substance Substances 0.000 description 2
- 238000000926 separation method Methods 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 101000650578 Salmonella phage P22 Regulatory protein C3 Proteins 0.000 description 1
- 101001040920 Triticum aestivum Alpha-amylase inhibitor 0.28 Proteins 0.000 description 1
- 229910052770 Uranium Inorganic materials 0.000 description 1
- 230000005262 alpha decay Effects 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 230000008094 contradictory effect Effects 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 230000001627 detrimental effect Effects 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- 230000001771 impaired effect Effects 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 230000014759 maintenance of location Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000003071 parasitic effect Effects 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- JFALSRSLKYAFGM-UHFFFAOYSA-N uranium(0) Chemical compound [U] JFALSRSLKYAFGM-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B10/00—Static random access memory [SRAM] devices
- H10B10/10—SRAM devices comprising bipolar components
Landscapes
- Element Separation (AREA)
- Semiconductor Integrated Circuits (AREA)
- Bipolar Integrated Circuits (AREA)
- Semiconductor Memories (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60044318A JPS61203662A (ja) | 1985-03-06 | 1985-03-06 | 半導体集積回路 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60044318A JPS61203662A (ja) | 1985-03-06 | 1985-03-06 | 半導体集積回路 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS61203662A true JPS61203662A (ja) | 1986-09-09 |
| JPH0442831B2 JPH0442831B2 (enrdf_load_stackoverflow) | 1992-07-14 |
Family
ID=12688135
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP60044318A Granted JPS61203662A (ja) | 1985-03-06 | 1985-03-06 | 半導体集積回路 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS61203662A (enrdf_load_stackoverflow) |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6065561A (ja) * | 1983-09-21 | 1985-04-15 | Hitachi Ltd | 半導体メモリ |
| JPS6197960A (ja) * | 1984-10-19 | 1986-05-16 | Hitachi Ltd | 半導体記憶装置 |
| JPH0326547A (ja) * | 1989-06-15 | 1991-02-05 | Crosfield Press Controls Ltd | レジスターマーク検出装置 |
-
1985
- 1985-03-06 JP JP60044318A patent/JPS61203662A/ja active Granted
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6065561A (ja) * | 1983-09-21 | 1985-04-15 | Hitachi Ltd | 半導体メモリ |
| JPS6197960A (ja) * | 1984-10-19 | 1986-05-16 | Hitachi Ltd | 半導体記憶装置 |
| JPH0326547A (ja) * | 1989-06-15 | 1991-02-05 | Crosfield Press Controls Ltd | レジスターマーク検出装置 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0442831B2 (enrdf_load_stackoverflow) | 1992-07-14 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| LAPS | Cancellation because of no payment of annual fees |