JPS61190994A - 半導体レ−ザ素子 - Google Patents

半導体レ−ザ素子

Info

Publication number
JPS61190994A
JPS61190994A JP60033603A JP3360385A JPS61190994A JP S61190994 A JPS61190994 A JP S61190994A JP 60033603 A JP60033603 A JP 60033603A JP 3360385 A JP3360385 A JP 3360385A JP S61190994 A JPS61190994 A JP S61190994A
Authority
JP
Japan
Prior art keywords
layer
active layer
semiconductor laser
guide layer
light guide
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP60033603A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0248151B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html
Inventor
Shinji Kaneiwa
進治 兼岩
Haruhisa Takiguchi
治久 瀧口
Tomohiko Yoshida
智彦 吉田
Kaneki Matsui
完益 松井
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sharp Corp
Original Assignee
Sharp Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sharp Corp filed Critical Sharp Corp
Priority to JP60033603A priority Critical patent/JPS61190994A/ja
Priority to EP86301095A priority patent/EP0192451B1/en
Priority to DE8686301095T priority patent/DE3680356D1/de
Priority to US06/830,864 priority patent/US4745616A/en
Publication of JPS61190994A publication Critical patent/JPS61190994A/ja
Publication of JPH0248151B2 publication Critical patent/JPH0248151B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
JP60033603A 1985-02-19 1985-02-19 半導体レ−ザ素子 Granted JPS61190994A (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP60033603A JPS61190994A (ja) 1985-02-19 1985-02-19 半導体レ−ザ素子
EP86301095A EP0192451B1 (en) 1985-02-19 1986-02-18 A semiconductor laser device
DE8686301095T DE3680356D1 (de) 1985-02-19 1986-02-18 Halbleiterlaser-vorrichtung.
US06/830,864 US4745616A (en) 1985-02-19 1986-02-19 Semiconductor laser device with a diffraction grating

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP60033603A JPS61190994A (ja) 1985-02-19 1985-02-19 半導体レ−ザ素子

Publications (2)

Publication Number Publication Date
JPS61190994A true JPS61190994A (ja) 1986-08-25
JPH0248151B2 JPH0248151B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1990-10-24

Family

ID=12391051

Family Applications (1)

Application Number Title Priority Date Filing Date
JP60033603A Granted JPS61190994A (ja) 1985-02-19 1985-02-19 半導体レ−ザ素子

Country Status (4)

Country Link
US (1) US4745616A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
EP (1) EP0192451B1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
JP (1) JPS61190994A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
DE (1) DE3680356D1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0240984A (ja) * 1988-07-30 1990-02-09 Tokyo Univ 半導体分布帰還型レーザ装置

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6318686A (ja) * 1986-07-10 1988-01-26 Sharp Corp 半導体レ−ザ素子
JP2659199B2 (ja) * 1987-11-11 1997-09-30 日本電気株式会社 可変波長フィルタ
DE3809609A1 (de) * 1988-03-22 1989-10-05 Siemens Ag Laserdiode zur erzeugung streng monochromatischer laserstrahlung
US4904045A (en) * 1988-03-25 1990-02-27 American Telephone And Telegraph Company Grating coupler with monolithically integrated quantum well index modulator
EP0526128B1 (en) * 1991-07-24 1997-06-11 Sharp Kabushiki Kaisha A method for producing a distributed feedback semiconductor laser device
EP1130726A3 (en) * 2000-01-28 2003-04-23 The Furukawa Electric Co., Ltd. Distributed feedback semiconductor laser device and multi-wavelength laser array
TW201029218A (en) * 2009-01-16 2010-08-01 Univ Nat Central Optical diode structure and manufacturing method

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS51146196A (en) * 1975-06-11 1976-12-15 Hitachi Ltd Diode laser
JPS5627987A (en) * 1979-08-15 1981-03-18 Kokusai Denshin Denwa Co Ltd <Kdd> Semiconductor laser
JPS58197788A (ja) * 1982-05-13 1983-11-17 Nippon Telegr & Teleph Corp <Ntt> 分布帰還形半導体レ−ザ装置の製造方法
JPS60145685A (ja) * 1984-01-09 1985-08-01 Nec Corp 分布帰還型半導体レ−ザ

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0240984A (ja) * 1988-07-30 1990-02-09 Tokyo Univ 半導体分布帰還型レーザ装置

Also Published As

Publication number Publication date
EP0192451A3 (en) 1987-10-14
EP0192451A2 (en) 1986-08-27
DE3680356D1 (de) 1991-08-29
US4745616A (en) 1988-05-17
JPH0248151B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1990-10-24
EP0192451B1 (en) 1991-07-24

Similar Documents

Publication Publication Date Title
JPH05275798A (ja) レーザダイオード
JPH073909B2 (ja) 半導体レーザの製造方法
JPS61190994A (ja) 半導体レ−ザ素子
US20020136255A1 (en) Semiconductor laser, optical element provided with the same and optical pickup provided with the optical element
JPH0211027B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
JP2703784B2 (ja) 半導体レーザ素子
JP2002141611A (ja) 半導体発光素子およびその製造方法
JPH09307190A (ja) ＡｌＩｎＧａＮ系半導体発光素子および半導体発光装置
JPS61137388A (ja) 半導体レ−ザ
JP3063684B2 (ja) 半導体レーザ及びその製造方法
JPS62144379A (ja) 半導体レ−ザ素子
JP2656482B2 (ja) 半導体レーザ装置
JP4024319B2 (ja) 半導体発光装置
JP3307600B2 (ja) 半導体レーザ素子およびその製造方法
JPH11195837A (ja) 半導体レーザの製造方法
JP2875440B2 (ja) 半導体レーザ素子およびその製造方法
JP2922010B2 (ja) 半導体レーザ装置
JPH0537070A (ja) 分布帰還型半導体レーザ素子の製造方法
JPS60213075A (ja) 半導体発光装置
JPH06125147A (ja) 半導体レーザ装置及びその製造方法
JP2001257421A (ja) 半導体レーザ素子および製造方法
JPH0563295A (ja) 半導体レーザ装置
JPH04105381A (ja) 半導体レーザ装置
JPH0472787A (ja) 半導体レーザ
JPH0353580A (ja) 半導体レーザ素子

Legal Events

Date Code Title Description
LAPS Cancellation because of no payment of annual fees