JPS61187237A - パタ−ン形成方法 - Google Patents

パタ−ン形成方法

Info

Publication number
JPS61187237A
JPS61187237A JP60025229A JP2522985A JPS61187237A JP S61187237 A JPS61187237 A JP S61187237A JP 60025229 A JP60025229 A JP 60025229A JP 2522985 A JP2522985 A JP 2522985A JP S61187237 A JPS61187237 A JP S61187237A
Authority
JP
Japan
Prior art keywords
light
gas
etching
pattern
forming method
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP60025229A
Other languages
English (en)
Japanese (ja)
Inventor
Nobuo Hayasaka
伸夫 早坂
Haruo Okano
晴雄 岡野
Yasuhiro Horiike
靖浩 堀池
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Priority to JP60025229A priority Critical patent/JPS61187237A/ja
Priority to US06/826,379 priority patent/US4698238A/en
Priority to GB08603417A priority patent/GB2172246B/en
Priority to DE19863604342 priority patent/DE3604342A1/de
Publication of JPS61187237A publication Critical patent/JPS61187237A/ja
Pending legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0041—Photosensitive materials providing an etching agent upon exposure
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00—Etching metallic material by chemical means
    • C23F1/02—Local etching
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P34/00—Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of devices
    • H10P34/40—Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of devices with high-energy radiation
    • H10P34/42—Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of devices with high-energy radiation with electromagnetic radiation, e.g. laser annealing
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/24—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
    • H10P50/242—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/26—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials
    • H10P50/264—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means
    • H10P50/266—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means by vapour etching only
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/26—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials
    • H10P50/264—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means
    • H10P50/266—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means by vapour etching only
    • H10P50/267—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means by vapour etching only using plasmas
    • H10P50/268—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means by vapour etching only using plasmas of silicon-containing layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
    • H10P50/282—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials
    • H10P50/283—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials by chemical means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/73—Etching of wafers, substrates or parts of devices using masks for insulating materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/68—Organic materials, e.g. photoresists
    • H10P14/683—Organic materials, e.g. photoresists carbon-based polymeric organic materials, e.g. polyimides, poly cyclobutene or PVC
    • H10P14/687—Organic materials, e.g. photoresists carbon-based polymeric organic materials, e.g. polyimides, poly cyclobutene or PVC the materials being fluorocarbon compounds, e.g. (CHxFy) n or polytetrafluoroethylene

Landscapes

  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
JP60025229A 1985-02-14 1985-02-14 パタ−ン形成方法 Pending JPS61187237A (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP60025229A JPS61187237A (ja) 1985-02-14 1985-02-14 パタ−ン形成方法
US06/826,379 US4698238A (en) 1985-02-14 1986-02-05 Pattern-forming method
GB08603417A GB2172246B (en) 1985-02-14 1986-02-12 Pattern-forming method
DE19863604342 DE3604342A1 (de) 1985-02-14 1986-02-12 Verfahren zur erzeugung eines musters

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP60025229A JPS61187237A (ja) 1985-02-14 1985-02-14 パタ−ン形成方法

Publications (1)

Publication Number Publication Date
JPS61187237A true JPS61187237A (ja) 1986-08-20

Family

ID=12160139

Family Applications (1)

Application Number Title Priority Date Filing Date
JP60025229A Pending JPS61187237A (ja) 1985-02-14 1985-02-14 パタ−ン形成方法

Country Status (4)

Country Link
US (1) US4698238A (OSRAM)
JP (1) JPS61187237A (OSRAM)
DE (1) DE3604342A1 (OSRAM)
GB (1) GB2172246B (OSRAM)

Families Citing this family (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3826046A1 (de) * 1987-08-17 1989-03-02 Asea Brown Boveri Verfahren zur herstellung von metallischen schichten
US5310624A (en) * 1988-01-29 1994-05-10 Massachusetts Institute Of Technology Integrated circuit micro-fabrication using dry lithographic processes
GB8806800D0 (en) * 1988-03-22 1988-04-20 British Telecomm Etching methods
JP2918892B2 (ja) * 1988-10-14 1999-07-12 株式会社日立製作所 プラズマエッチング処理方法
GB8927377D0 (en) * 1989-12-04 1990-01-31 Univ Edinburgh Improvements in and relating to amperometric assays
US5318662A (en) * 1989-12-20 1994-06-07 Texas Instruments Incorporated Copper etch process using halides
DE69012084T2 (de) * 1989-12-20 1995-01-19 Texas Instruments Inc Verfahren zum Ätzen von Kupfer und dadurch hergestelltes gedrucktes Schaltbild.
DE69132523D1 (de) * 1990-05-09 2001-03-08 Canon Kk Erzeugung von Mustern und Herstellungsverfahren für Halbleiteranordnungen mit diesem Muster
EP0909989A1 (en) * 1990-09-26 1999-04-21 Canon Kabushiki Kaisha Photolithographic processing method and apparatus
US5296271A (en) * 1991-06-13 1994-03-22 Motorola, Inc. Microwave treatment of photoresist on a substrate
WO1996041236A1 (en) * 1995-06-07 1996-12-19 The Regents Of The University Of California Therapeutic microdevices and methods of making and using same
US6107102A (en) * 1995-06-07 2000-08-22 Regents Of The University Of California Therapeutic microdevices and methods of making and using same
NZ516848A (en) * 1997-06-20 2004-03-26 Ciphergen Biosystems Inc Retentate chromatography apparatus with applications in biology and medicine
DE19860179A1 (de) * 1998-12-24 2000-06-29 Audi Ag Verfahren zur Erzeugung einer strukturierten Maskierung
SG115381A1 (en) * 2001-06-20 2005-10-28 Univ Singapore Removal of organic layers from organic electronic devices
US8383316B2 (en) * 2006-07-10 2013-02-26 Pixelligent Technologies, Llc Resists for lithography
US8993221B2 (en) 2012-02-10 2015-03-31 Pixelligent Technologies, Llc Block co-polymer photoresist
JP2007530988A (ja) * 2003-07-17 2007-11-01 コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ 反射器を製造する方法と、このような反射器を含む液晶ディスプレイデバイス
US8420978B2 (en) * 2007-01-18 2013-04-16 The Board Of Trustees Of The University Of Illinois High throughput, low cost dual-mode patterning method for large area substrates

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59194437A (ja) * 1983-04-18 1984-11-05 Mitsubishi Electric Corp パタ−ン加工装置
JPS59194440A (ja) * 1983-04-18 1984-11-05 Mitsubishi Electric Corp パタ−ン形成装置

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4107349A (en) * 1977-08-12 1978-08-15 The United States Of America As Represented By The Secretary Of The Army Method of adjusting the frequency of piezoelectric resonators
US4414059A (en) * 1982-12-09 1983-11-08 International Business Machines Corporation Far UV patterning of resist materials
US4595601A (en) * 1984-05-25 1986-06-17 Kabushiki Kaisha Toshiba Method of selectively forming an insulation layer

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59194437A (ja) * 1983-04-18 1984-11-05 Mitsubishi Electric Corp パタ−ン加工装置
JPS59194440A (ja) * 1983-04-18 1984-11-05 Mitsubishi Electric Corp パタ−ン形成装置

Also Published As

Publication number Publication date
DE3604342A1 (de) 1986-08-14
DE3604342C2 (OSRAM) 1991-09-12
GB2172246A (en) 1986-09-17
US4698238A (en) 1987-10-06
GB2172246B (en) 1988-12-21
GB8603417D0 (en) 1986-03-19

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