JPS6117798B2 - - Google Patents
Info
- Publication number
- JPS6117798B2 JPS6117798B2 JP1761282A JP1761282A JPS6117798B2 JP S6117798 B2 JPS6117798 B2 JP S6117798B2 JP 1761282 A JP1761282 A JP 1761282A JP 1761282 A JP1761282 A JP 1761282A JP S6117798 B2 JPS6117798 B2 JP S6117798B2
- Authority
- JP
- Japan
- Prior art keywords
- single crystal
- crystal
- melt
- liquid
- grown
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000013078 crystal Substances 0.000 claims description 131
- 239000000155 melt Substances 0.000 claims description 33
- 239000002775 capsule Substances 0.000 claims description 21
- 239000007788 liquid Substances 0.000 claims description 20
- 238000000034 method Methods 0.000 claims description 19
- 150000001875 compounds Chemical class 0.000 claims description 14
- 239000004065 semiconductor Substances 0.000 claims description 14
- 238000001514 detection method Methods 0.000 claims description 13
- 238000004519 manufacturing process Methods 0.000 claims description 13
- 238000005538 encapsulation Methods 0.000 claims description 5
- 238000002844 melting Methods 0.000 claims description 2
- 230000008018 melting Effects 0.000 claims description 2
- 238000007789 sealing Methods 0.000 claims description 2
- 239000000565 sealant Substances 0.000 description 18
- 238000010494 dissociation reaction Methods 0.000 description 17
- 230000005593 dissociations Effects 0.000 description 17
- 230000000694 effects Effects 0.000 description 10
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 9
- 239000011261 inert gas Substances 0.000 description 5
- 230000007547 defect Effects 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 238000007796 conventional method Methods 0.000 description 3
- 238000001816 cooling Methods 0.000 description 3
- 230000007423 decrease Effects 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 229910000673 Indium arsenide Inorganic materials 0.000 description 1
- 244000124853 Perilla frutescens Species 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 239000008393 encapsulating agent Substances 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- RPQDHPTXJYYUPQ-UHFFFAOYSA-N indium arsenide Chemical compound [In]#[As] RPQDHPTXJYYUPQ-UHFFFAOYSA-N 0.000 description 1
- 239000002932 luster Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 230000005499 meniscus Effects 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 230000001568 sexual effect Effects 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 230000003746 surface roughness Effects 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B27/00—Single-crystal growth under a protective fluid
- C30B27/02—Single-crystal growth under a protective fluid by pulling from a melt
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1761282A JPS58135626A (ja) | 1982-02-08 | 1982-02-08 | 化合物半導体単結晶の製造方法及び製造装置 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1761282A JPS58135626A (ja) | 1982-02-08 | 1982-02-08 | 化合物半導体単結晶の製造方法及び製造装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS58135626A JPS58135626A (ja) | 1983-08-12 |
| JPS6117798B2 true JPS6117798B2 (enrdf_load_stackoverflow) | 1986-05-09 |
Family
ID=11948701
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1761282A Granted JPS58135626A (ja) | 1982-02-08 | 1982-02-08 | 化合物半導体単結晶の製造方法及び製造装置 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS58135626A (enrdf_load_stackoverflow) |
Families Citing this family (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS59116195A (ja) * | 1982-12-23 | 1984-07-04 | Toshiba Corp | 化合物半導体単結晶の製造方法 |
| JPS6046993A (ja) * | 1983-08-23 | 1985-03-14 | Sumitomo Electric Ind Ltd | 単結晶引上装置 |
| JPS6046998A (ja) * | 1983-08-26 | 1985-03-14 | Sumitomo Electric Ind Ltd | 単結晶引上方法及びそのための装置 |
| JPS6090897A (ja) * | 1983-10-25 | 1985-05-22 | Nippon Telegr & Teleph Corp <Ntt> | 化合物半導体単結晶の製造方法および製造装置 |
| JPS60210591A (ja) * | 1984-04-05 | 1985-10-23 | Hitachi Cable Ltd | 半絶縁性ＧａＡｓ単結晶の製造方法 |
| JPS60264390A (ja) * | 1984-06-08 | 1985-12-27 | Sumitomo Electric Ind Ltd | 単結晶の育成方法 |
| JPS6131381A (ja) * | 1984-07-20 | 1986-02-13 | Nippon Telegr & Teleph Corp <Ntt> | 化合物半導体結晶の引き上げ製造方法 |
| US5074953A (en) * | 1988-08-19 | 1991-12-24 | Mitsubishi Materials Corporation | Method for monocrystalline growth of dissociative compound semiconductors |
-
1982
- 1982-02-08 JP JP1761282A patent/JPS58135626A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS58135626A (ja) | 1983-08-12 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US4874458A (en) | Single crystal growing method having improved melt control | |
| JPS6046998A (ja) | 単結晶引上方法及びそのための装置 | |
| JPH03122097A (ja) | 単結晶の２‐６族または３‐５族化合物の製造法及びそれより作られる製品 | |
| US20240271317A1 (en) | Crystal Puller and Method for Pulling Single-Crystal Silicon Ingot, and Single-Crystal Silicon Ingot | |
| JPS6117798B2 (enrdf_load_stackoverflow) | ||
| EP0162467A2 (en) | Device for growing single crystals of dissociative compounds | |
| US20060191468A1 (en) | Process for producing single crystal | |
| JP3750440B2 (ja) | 単結晶引上方法 | |
| EP0355833B1 (en) | Method of producing compound semiconductor single crystal | |
| JP3885245B2 (ja) | 単結晶引上方法 | |
| JP2734820B2 (ja) | 化合物半導体単結晶の製造方法 | |
| JP2700145B2 (ja) | 化合物半導体単結晶の製造方法 | |
| JPS60122791A (ja) | 液体封止結晶引上方法 | |
| JPS62123095A (ja) | 低転位密度ＧａＡｓ単結晶の製造方法 | |
| JPS6090897A (ja) | 化合物半導体単結晶の製造方法および製造装置 | |
| JPS606918B2 (ja) | ３−５族化合物単結晶の製造方法 | |
| JPS59131597A (ja) | 高品質ガリウム砒素単結晶の製造方法 | |
| JPS6389497A (ja) | 珪素添加ガリウム砒素単結晶の製造方法 | |
| JPS5950627B2 (ja) | 単結晶シリコン引上装置 | |
| JPH05319973A (ja) | 単結晶製造装置 | |
| JPH11106292A (ja) | 半導体単結晶の製造方法 | |
| JPH0223520B2 (enrdf_load_stackoverflow) | ||
| JPH01208396A (ja) | 化合物半導体単結晶の製造方法 | |
| JP2005200228A (ja) | 化合物半導体単結晶成長方法 | |
| JPS63176397A (ja) | ３−５族化合物半導体単結晶の製造方法 |