JPS61172300A - 半導体記憶装置 - Google Patents

半導体記憶装置

Info

Publication number
JPS61172300A
JPS61172300A JP60013069A JP1306985A JPS61172300A JP S61172300 A JPS61172300 A JP S61172300A JP 60013069 A JP60013069 A JP 60013069A JP 1306985 A JP1306985 A JP 1306985A JP S61172300 A JPS61172300 A JP S61172300A
Authority
JP
Japan
Prior art keywords
voltage
memory cell
sense amplifier
floating gate
reliability
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP60013069A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0527200B2 (enExample
Inventor
Hiroshi Iwahashi
岩橋　弘
Masamichi Asano
正通 浅野
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Priority to JP60013069A priority Critical patent/JPS61172300A/ja
Publication of JPS61172300A publication Critical patent/JPS61172300A/ja
Priority to US07/168,560 priority patent/US4799195A/en
Publication of JPH0527200B2 publication Critical patent/JPH0527200B2/ja
Granted legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/26—Sensing or reading circuits; Data output circuits
    • G11C16/28—Sensing or reading circuits; Data output circuits using differential sensing or reference cells, e.g. dummy cells

Landscapes

  • Read Only Memory (AREA)
  • For Increasing The Reliability Of Semiconductor Memories (AREA)
  • Techniques For Improving Reliability Of Storages (AREA)
  • Semiconductor Memories (AREA)
JP60013069A 1985-01-26 1985-01-26 半導体記憶装置 Granted JPS61172300A (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP60013069A JPS61172300A (ja) 1985-01-26 1985-01-26 半導体記憶装置
US07/168,560 US4799195A (en) 1985-01-26 1988-03-04 Semiconductor memory device with a sense amplifier

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP60013069A JPS61172300A (ja) 1985-01-26 1985-01-26 半導体記憶装置

Publications (2)

Publication Number Publication Date
JPS61172300A true JPS61172300A (ja) 1986-08-02
JPH0527200B2 JPH0527200B2 (enExample) 1993-04-20

Family

ID=11822857

Family Applications (1)

Application Number Title Priority Date Filing Date
JP60013069A Granted JPS61172300A (ja) 1985-01-26 1985-01-26 半導体記憶装置

Country Status (2)

Country Link
US (1) US4799195A (enExample)
JP (1) JPS61172300A (enExample)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01165095A (ja) * 1987-12-21 1989-06-29 Nec Ic Microcomput Syst Ltd 半導体読み出し専用メモリ
JPH03214497A (ja) * 1990-01-19 1991-09-19 Toshiba Corp 半導体集積回路

Families Citing this family (45)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0766675B2 (ja) * 1987-07-14 1995-07-19 株式会社東芝 プログラマブルｒｏｍ
JPH01220295A (ja) * 1988-02-29 1989-09-01 Nec Corp 半導体記憶装置
JP2573335B2 (ja) * 1988-11-09 1997-01-22 株式会社東芝 不揮発性メモリ
US5146106A (en) * 1988-12-09 1992-09-08 Synaptics, Incorporated CMOS winner-take all circuit with offset adaptation
US5049758A (en) * 1988-12-09 1991-09-17 Synaptics, Incorporated Adaptable CMOS winner-take all circuit
JPH0814995B2 (ja) * 1989-01-27 1996-02-14 株式会社東芝 半導体メモリ
US5148397A (en) * 1989-03-16 1992-09-15 Oki Electric Industry Co. Ltd. Semiconductor memory with externally controlled dummy comparator
US7447069B1 (en) 1989-04-13 2008-11-04 Sandisk Corporation Flash EEprom system
DE69024086T2 (de) * 1989-04-13 1996-06-20 Sundisk Corp EEprom-System mit Blocklöschung
US5163021A (en) * 1989-04-13 1992-11-10 Sundisk Corporation Multi-state EEprom read and write circuits and techniques
US5172338B1 (en) * 1989-04-13 1997-07-08 Sandisk Corp Multi-state eeprom read and write circuits and techniques
US5198997A (en) * 1989-08-11 1993-03-30 Sony Corporation Ultraviolet erasable nonvolatile memory with current mirror circuit type sense amplifier
JPH03283200A (ja) * 1990-03-30 1991-12-13 Toshiba Corp 不揮発性半導体記憶装置及びこれに用いられるメモリセルトランジスタのしきい値電圧の測定方法
US5218569A (en) 1991-02-08 1993-06-08 Banks Gerald J Electrically alterable non-volatile memory with n-bits per memory cell
US6002614A (en) 1991-02-08 1999-12-14 Btg International Inc. Memory apparatus including programmable non-volatile multi-bit memory cell, and apparatus and method for demarcating memory states of the cell
JPH04321997A (ja) * 1991-04-19 1992-11-11 Nec Corp 半導体メモリ装置
US6222762B1 (en) * 1992-01-14 2001-04-24 Sandisk Corporation Multi-state memory
US5657332A (en) * 1992-05-20 1997-08-12 Sandisk Corporation Soft errors handling in EEPROM devices
US5532962A (en) * 1992-05-20 1996-07-02 Sandisk Corporation Soft errors handling in EEPROM devices
JPH0636570A (ja) * 1992-07-16 1994-02-10 Mitsubishi Electric Corp 半導体記憶装置のセンスアンプ回路
US5390147A (en) * 1994-03-02 1995-02-14 Atmel Corporation Core organization and sense amplifier having lubricating current, active clamping and buffered sense node for speed enhancement for non-volatile memory
US5493533A (en) * 1994-09-28 1996-02-20 Atmel Corporation Dual differential trans-impedance sense amplifier and method
JPH08115598A (ja) * 1994-10-18 1996-05-07 Mitsubishi Denki Semiconductor Software Kk 不揮発性半導体記憶装置及び半導体装置
US6353554B1 (en) * 1995-02-27 2002-03-05 Btg International Inc. Memory apparatus including programmable non-volatile multi-bit memory cell, and apparatus and method for demarcating memory states of the cell
US5828603A (en) * 1997-04-23 1998-10-27 Atmel Corporation Memory device having a power supply-independent low power consumption bit line voltage clamp
US5909449A (en) * 1997-09-08 1999-06-01 Invox Technology Multibit-per-cell non-volatile memory with error detection and correction
US6137720A (en) * 1997-11-26 2000-10-24 Cypress Semiconductor Corporation Semiconductor reference voltage generator having a non-volatile memory structure
TW440841B (en) * 1998-03-17 2001-06-16 Sanyo Electric Co Sensor amplifier
US7012835B2 (en) * 2003-10-03 2006-03-14 Sandisk Corporation Flash memory data correction and scrub techniques
US7173852B2 (en) * 2003-10-03 2007-02-06 Sandisk Corporation Corrected data storage and handling methods
US7315916B2 (en) * 2004-12-16 2008-01-01 Sandisk Corporation Scratch pad block
US7395404B2 (en) * 2004-12-16 2008-07-01 Sandisk Corporation Cluster auto-alignment for storing addressable data packets in a non-volatile memory array
US7312641B2 (en) * 2004-12-28 2007-12-25 Spansion Llc Sense amplifiers with high voltage swing
US7716538B2 (en) * 2006-09-27 2010-05-11 Sandisk Corporation Memory with cell population distribution assisted read margining
US7886204B2 (en) * 2006-09-27 2011-02-08 Sandisk Corporation Methods of cell population distribution assisted read margining
US7573773B2 (en) * 2007-03-28 2009-08-11 Sandisk Corporation Flash memory with data refresh triggered by controlled scrub data reads
US7477547B2 (en) * 2007-03-28 2009-01-13 Sandisk Corporation Flash memory refresh techniques triggered by controlled scrub data reads
US8687421B2 (en) 2011-11-21 2014-04-01 Sandisk Technologies Inc. Scrub techniques for use with dynamic read
US9230689B2 (en) 2014-03-17 2016-01-05 Sandisk Technologies Inc. Finding read disturbs on non-volatile memories
US9552171B2 (en) 2014-10-29 2017-01-24 Sandisk Technologies Llc Read scrub with adaptive counter management
US9978456B2 (en) 2014-11-17 2018-05-22 Sandisk Technologies Llc Techniques for reducing read disturb in partially written blocks of non-volatile memory
US9349479B1 (en) 2014-11-18 2016-05-24 Sandisk Technologies Inc. Boundary word line operation in nonvolatile memory
US9449700B2 (en) 2015-02-13 2016-09-20 Sandisk Technologies Llc Boundary word line search and open block read methods with reduced read disturb
US9653154B2 (en) 2015-09-21 2017-05-16 Sandisk Technologies Llc Write abort detection for multi-state memories
US9577639B1 (en) * 2015-09-24 2017-02-21 Qualcomm Incorporated Source separated cell

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55153200A (en) * 1979-05-14 1980-11-28 Fairchild Camera Instr Co Eprom reliability testing circuit
JPS5671898A (en) * 1979-11-15 1981-06-15 Nippon Texas Instr Kk Nonvolatile semiconductor memory device and its testing method

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4028557A (en) * 1976-05-21 1977-06-07 Bell Telephone Laboratories, Incorporated Dynamic sense-refresh detector amplifier
US4301518A (en) * 1979-11-01 1981-11-17 Texas Instruments Incorporated Differential sensing of single ended memory array

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55153200A (en) * 1979-05-14 1980-11-28 Fairchild Camera Instr Co Eprom reliability testing circuit
JPS5671898A (en) * 1979-11-15 1981-06-15 Nippon Texas Instr Kk Nonvolatile semiconductor memory device and its testing method

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01165095A (ja) * 1987-12-21 1989-06-29 Nec Ic Microcomput Syst Ltd 半導体読み出し専用メモリ
JPH03214497A (ja) * 1990-01-19 1991-09-19 Toshiba Corp 半導体集積回路

Also Published As

Publication number Publication date
US4799195A (en) 1989-01-17
JPH0527200B2 (enExample) 1993-04-20

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Legal Events

Date Code Title Description
EXPY Cancellation because of completion of term