JPS61170200U - - Google Patents

Info

Publication number
JPS61170200U
JPS61170200U JP1985052285U JP5228585U JPS61170200U JP S61170200 U JPS61170200 U JP S61170200U JP 1985052285 U JP1985052285 U JP 1985052285U JP 5228585 U JP5228585 U JP 5228585U JP S61170200 U JPS61170200 U JP S61170200U
Authority
JP
Japan
Prior art keywords
decoder
circuit
lines
outputs
word lines
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP1985052285U
Other languages
English (en)
Japanese (ja)
Other versions
JPH051040Y2 (US06589383-20030708-C00041.png
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP1985052285U priority Critical patent/JPH051040Y2/ja
Priority to US06/849,630 priority patent/US4870618A/en
Publication of JPS61170200U publication Critical patent/JPS61170200U/ja
Application granted granted Critical
Publication of JPH051040Y2 publication Critical patent/JPH051040Y2/ja
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/04—Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
    • G11C29/50—Marginal testing, e.g. race, voltage or current testing
    • G11C29/50016—Marginal testing, e.g. race, voltage or current testing of retention
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/04—Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
    • G11C29/50—Marginal testing, e.g. race, voltage or current testing
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS

Landscapes

  • Techniques For Improving Reliability Of Storages (AREA)
  • Test And Diagnosis Of Digital Computers (AREA)
  • Read Only Memory (AREA)
JP1985052285U 1985-04-09 1985-04-09 Expired - Lifetime JPH051040Y2 (US06589383-20030708-C00041.png)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP1985052285U JPH051040Y2 (US06589383-20030708-C00041.png) 1985-04-09 1985-04-09
US06/849,630 US4870618A (en) 1985-04-09 1986-04-09 Semiconductor memory equipped with test circuit for testing data holding characteristic during data programming period

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1985052285U JPH051040Y2 (US06589383-20030708-C00041.png) 1985-04-09 1985-04-09

Publications (2)

Publication Number Publication Date
JPS61170200U true JPS61170200U (US06589383-20030708-C00041.png) 1986-10-22
JPH051040Y2 JPH051040Y2 (US06589383-20030708-C00041.png) 1993-01-12

Family

ID=12910524

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1985052285U Expired - Lifetime JPH051040Y2 (US06589383-20030708-C00041.png) 1985-04-09 1985-04-09

Country Status (2)

Country Link
US (1) US4870618A (US06589383-20030708-C00041.png)
JP (1) JPH051040Y2 (US06589383-20030708-C00041.png)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5197033A (en) 1986-07-18 1993-03-23 Hitachi, Ltd. Semiconductor device incorporating internal power supply for compensating for deviation in operating condition and fabrication process conditions
JPH0766675B2 (ja) * 1987-07-14 1995-07-19 株式会社東芝 プログラマブルｒｏｍ
JPH02177100A (ja) * 1988-12-27 1990-07-10 Nec Corp 半導体記憶装置のテスト回路
DE69034227T2 (de) * 1989-04-13 2007-05-03 Sandisk Corp., Sunnyvale EEprom-System mit Blocklöschung
US5172338B1 (en) * 1989-04-13 1997-07-08 Sandisk Corp Multi-state eeprom read and write circuits and techniques
US7447069B1 (en) 1989-04-13 2008-11-04 Sandisk Corporation Flash EEprom system
EP0432481A3 (en) * 1989-12-14 1992-04-29 Texas Instruments Incorporated Methods and apparatus for verifying the state of a plurality of electrically programmable memory cells
WO1992006475A1 (en) * 1990-10-02 1992-04-16 Kabushiki Kaisha Toshiba Semiconductor memory
US5148436A (en) * 1990-10-15 1992-09-15 Motorola, Inc. Circuit for detecting false read data from eprom
JPH04188498A (ja) * 1990-11-22 1992-07-07 Fujitsu Ltd 書き換え可能な不揮発性半導体記憶装置
JP2829134B2 (ja) * 1990-12-27 1998-11-25 株式会社東芝 半導体記憶装置
JP3526894B2 (ja) * 1993-01-12 2004-05-17 株式会社ルネサステクノロジ 不揮発性半導体記憶装置
JP2001006379A (ja) * 1999-06-16 2001-01-12 Fujitsu Ltd 複写、移動機能を有するフラッシュメモリ
US6574158B1 (en) 2001-09-27 2003-06-03 Cypress Semiconductor Corp. Method and system for measuring threshold of EPROM cells
KR100515055B1 (ko) * 2002-12-12 2005-09-14 삼성전자주식회사 모든 칼럼 선택 트랜지스터들을 선택할 수 있는 칼럼 프리디코더를 갖는 플레쉬 메모리 장치와 그 스트레스 테스트방법

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5936400A (ja) * 1982-07-19 1984-02-28 モトロ−ラ・インコ−ポレ−テツド 半導体メモリアレ−検査方法
JPS59146495A (ja) * 1983-02-10 1984-08-22 Fujitsu Ltd 半導体記憶装置

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58222489A (ja) * 1982-06-18 1983-12-24 Nec Corp 半導体記憶装置

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5936400A (ja) * 1982-07-19 1984-02-28 モトロ−ラ・インコ−ポレ−テツド 半導体メモリアレ−検査方法
JPS59146495A (ja) * 1983-02-10 1984-08-22 Fujitsu Ltd 半導体記憶装置

Also Published As

Publication number Publication date
US4870618A (en) 1989-09-26
JPH051040Y2 (US06589383-20030708-C00041.png) 1993-01-12

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