JPS6116520A - 半導体装置の製造方法 - Google Patents
半導体装置の製造方法Info
- Publication number
- JPS6116520A JPS6116520A JP59138308A JP13830884A JPS6116520A JP S6116520 A JPS6116520 A JP S6116520A JP 59138308 A JP59138308 A JP 59138308A JP 13830884 A JP13830884 A JP 13830884A JP S6116520 A JPS6116520 A JP S6116520A
- Authority
- JP
- Japan
- Prior art keywords
- resist
- pattern
- coating
- semiconductor device
- sides
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 14
- 238000004519 manufacturing process Methods 0.000 title claims description 10
- 238000000034 method Methods 0.000 claims abstract description 17
- 238000000576 coating method Methods 0.000 claims abstract description 15
- 239000011248 coating agent Substances 0.000 claims abstract description 14
- 229920002120 photoresistant polymer Polymers 0.000 claims abstract description 8
- ISWSIDIOOBJBQZ-UHFFFAOYSA-N Phenol Chemical compound OC1=CC=CC=C1 ISWSIDIOOBJBQZ-UHFFFAOYSA-N 0.000 claims abstract description 3
- 229920003986 novolac Polymers 0.000 claims abstract description 3
- 238000000206 photolithography Methods 0.000 claims description 2
- 239000000758 substrate Substances 0.000 claims description 2
- 229920005989 resin Polymers 0.000 claims 3
- 239000011347 resin Substances 0.000 claims 3
- 238000010438 heat treatment Methods 0.000 claims 2
- WTQZSMDDRMKJRI-UHFFFAOYSA-N 4-diazoniophenolate Chemical compound [O-]C1=CC=C([N+]#N)C=C1 WTQZSMDDRMKJRI-UHFFFAOYSA-N 0.000 claims 1
- 238000004090 dissolution Methods 0.000 claims 1
- 239000003112 inhibitor Substances 0.000 claims 1
- 239000013557 residual solvent Substances 0.000 abstract 1
- 239000002904 solvent Substances 0.000 description 6
- 238000007796 conventional method Methods 0.000 description 3
- 239000003795 chemical substances by application Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000012530 fluid Substances 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 238000009987 spinning Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02118—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer carbon based polymeric organic or inorganic material, e.g. polyimides, poly cyclobutene or PVC
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP59138308A JPS6116520A (ja) | 1984-07-03 | 1984-07-03 | 半導体装置の製造方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP59138308A JPS6116520A (ja) | 1984-07-03 | 1984-07-03 | 半導体装置の製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS6116520A true JPS6116520A (ja) | 1986-01-24 |
JPH0244138B2 JPH0244138B2 (enrdf_load_stackoverflow) | 1990-10-02 |
Family
ID=15218838
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP59138308A Granted JPS6116520A (ja) | 1984-07-03 | 1984-07-03 | 半導体装置の製造方法 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6116520A (enrdf_load_stackoverflow) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0279414A (ja) * | 1988-09-14 | 1990-03-20 | Mitsubishi Electric Corp | パターンのアライメント方法 |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5478981A (en) * | 1977-12-07 | 1979-06-23 | Hitachi Ltd | Photo resist coating unit |
-
1984
- 1984-07-03 JP JP59138308A patent/JPS6116520A/ja active Granted
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5478981A (en) * | 1977-12-07 | 1979-06-23 | Hitachi Ltd | Photo resist coating unit |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0279414A (ja) * | 1988-09-14 | 1990-03-20 | Mitsubishi Electric Corp | パターンのアライメント方法 |
Also Published As
Publication number | Publication date |
---|---|
JPH0244138B2 (enrdf_load_stackoverflow) | 1990-10-02 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP2919004B2 (ja) | パターン形成方法 | |
JPS6116520A (ja) | 半導体装置の製造方法 | |
JPS616830A (ja) | パタ−ン形成方法 | |
JP2875556B2 (ja) | 半導体素子の製造方法 | |
JPH0548928B2 (enrdf_load_stackoverflow) | ||
JPS6236823A (ja) | レジストパタ−ン形成方法 | |
JP2712407B2 (ja) | 2層フォトレジストを用いた微細パターンの形成方法 | |
JPS63229452A (ja) | レジストの現像方法 | |
JPH01260831A (ja) | 感光性ポリイミドのパターニング方法 | |
JPH11195667A (ja) | ボンディング用パッド及びホトマスクのアライメント方法 | |
JPH05114556A (ja) | 集積回路の製造に適したフオトレジストパターンの形成方法 | |
JPS60207339A (ja) | パタ−ン形成方法 | |
JPH0470755A (ja) | パターン形成方法 | |
JP2589471B2 (ja) | 半導体装置の製造方法 | |
JPS62137831A (ja) | 半導体装置の製造方法 | |
JP3243904B2 (ja) | レジストパターンの形成方法 | |
JPS63301519A (ja) | レジストパタ−ン形成方法 | |
JP2779528B2 (ja) | 半導体装置の製造方法 | |
JPH0677106A (ja) | フォトレジストパターンの形成方法 | |
KR930006133B1 (ko) | 모스소자의 콘택트홀 형성방법 | |
JPS6276724A (ja) | 有機薄膜熱処理方法 | |
JPS5966122A (ja) | パタ−ン形成方法 | |
JPS62177922A (ja) | 半導体装置の製造方法 | |
JPH0462166B2 (enrdf_load_stackoverflow) | ||
JPS61263223A (ja) | 半導体装置の製造方法 |