JPS61160977A - 電界効果トランジスタ - Google Patents

電界効果トランジスタ

Info

Publication number
JPS61160977A
JPS61160977A JP60000431A JP43185A JPS61160977A JP S61160977 A JPS61160977 A JP S61160977A JP 60000431 A JP60000431 A JP 60000431A JP 43185 A JP43185 A JP 43185A JP S61160977 A JPS61160977 A JP S61160977A
Authority
JP
Japan
Prior art keywords
layer
semiconductor layer
gate
field effect
effect transistor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP60000431A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0217935B2 (cg-RX-API-DMAC10.html
Inventor
Kotaro Tsubaki
光太郎 椿
Minoru Okamoto
稔 岡本
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NTT Inc
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Priority to JP60000431A priority Critical patent/JPS61160977A/ja
Publication of JPS61160977A publication Critical patent/JPS61160977A/ja
Publication of JPH0217935B2 publication Critical patent/JPH0217935B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/40—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels
    • H10D30/47—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels having 2D charge carrier gas channels, e.g. nanoribbon FETs or high electron mobility transistors [HEMT]
    • H10D30/471—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT]
    • H10D30/475—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT] having wider bandgap layer formed on top of lower bandgap active layer, e.g. undoped barrier HEMTs such as i-AlGaN/GaN HEMTs
    • H10D30/4755—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT] having wider bandgap layer formed on top of lower bandgap active layer, e.g. undoped barrier HEMTs such as i-AlGaN/GaN HEMTs having wide bandgap charge-carrier supplying layers, e.g. modulation doped HEMTs such as n-AlGaAs/GaAs HEMTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/27—Electrodes not carrying the current to be rectified, amplified, oscillated or switched, e.g. gates
    • H10D64/311—Gate electrodes for field-effect devices
    • H10D64/411—Gate electrodes for field-effect devices for FETs

Landscapes

  • Junction Field-Effect Transistors (AREA)
JP60000431A 1985-01-08 1985-01-08 電界効果トランジスタ Granted JPS61160977A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP60000431A JPS61160977A (ja) 1985-01-08 1985-01-08 電界効果トランジスタ

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP60000431A JPS61160977A (ja) 1985-01-08 1985-01-08 電界効果トランジスタ

Publications (2)

Publication Number Publication Date
JPS61160977A true JPS61160977A (ja) 1986-07-21
JPH0217935B2 JPH0217935B2 (cg-RX-API-DMAC10.html) 1990-04-24

Family

ID=11473621

Family Applications (1)

Application Number Title Priority Date Filing Date
JP60000431A Granted JPS61160977A (ja) 1985-01-08 1985-01-08 電界効果トランジスタ

Country Status (1)

Country Link
JP (1) JPS61160977A (cg-RX-API-DMAC10.html)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0335498A3 (en) * 1988-02-24 1990-04-04 Arizona Board Of Regents Field-effect transistor having a lateral surface superlattice, and method of making the same
JPH0316270A (ja) * 1989-03-27 1991-01-24 Internatl Business Mach Corp <Ibm> 量子力学的効果デバイス

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0335498A3 (en) * 1988-02-24 1990-04-04 Arizona Board Of Regents Field-effect transistor having a lateral surface superlattice, and method of making the same
JPH0316270A (ja) * 1989-03-27 1991-01-24 Internatl Business Mach Corp <Ibm> 量子力学的効果デバイス

Also Published As

Publication number Publication date
JPH0217935B2 (cg-RX-API-DMAC10.html) 1990-04-24

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