JPS61159725A - 化合物半導体液相成長法 - Google Patents

化合物半導体液相成長法

Info

Publication number
JPS61159725A
JPS61159725A JP59281563A JP28156384A JPS61159725A JP S61159725 A JPS61159725 A JP S61159725A JP 59281563 A JP59281563 A JP 59281563A JP 28156384 A JP28156384 A JP 28156384A JP S61159725 A JPS61159725 A JP S61159725A
Authority
JP
Japan
Prior art keywords
type
layer
solution
liquid phase
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP59281563A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0464456B2 (enExample
Inventor
Hiroyuki Kano
浩之 加納
Masafumi Hashimoto
雅文 橋本
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toyota Central R&D Labs Inc
Original Assignee
Toyota Central R&D Labs Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toyota Central R&D Labs Inc filed Critical Toyota Central R&D Labs Inc
Priority to JP59281563A priority Critical patent/JPS61159725A/ja
Publication of JPS61159725A publication Critical patent/JPS61159725A/ja
Publication of JPH0464456B2 publication Critical patent/JPH0464456B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02439—Materials
    • H01L21/02455—Group 13/15 materials
    • H01L21/02463—Arsenides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02538—Group 13/15 materials
    • H01L21/02546—Arsenides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/0257—Doping during depositing
    • H01L21/02573—Conductivity type
    • H01L21/02576—N-type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02623—Liquid deposition
    • H01L21/02625—Liquid deposition using melted materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02623—Liquid deposition
    • H01L21/02628—Liquid deposition using solutions

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Semiconductor Lasers (AREA)
  • Led Devices (AREA)
JP59281563A 1984-12-29 1984-12-29 化合物半導体液相成長法 Granted JPS61159725A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP59281563A JPS61159725A (ja) 1984-12-29 1984-12-29 化合物半導体液相成長法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59281563A JPS61159725A (ja) 1984-12-29 1984-12-29 化合物半導体液相成長法

Publications (2)

Publication Number Publication Date
JPS61159725A true JPS61159725A (ja) 1986-07-19
JPH0464456B2 JPH0464456B2 (enExample) 1992-10-15

Family

ID=17640928

Family Applications (1)

Application Number Title Priority Date Filing Date
JP59281563A Granted JPS61159725A (ja) 1984-12-29 1984-12-29 化合物半導体液相成長法

Country Status (1)

Country Link
JP (1) JPS61159725A (enExample)

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4911467A (enExample) * 1972-05-30 1974-01-31
JPS5325633A (en) * 1976-08-21 1978-03-09 Sumitomo Metal Ind Granulation method of melted blast furnace slag
JPS5531610A (en) * 1978-08-28 1980-03-06 Nissan Motor Co Ltd Structure of bumper
JPS5797665A (en) * 1980-12-10 1982-06-17 Oki Electric Ind Co Ltd Manufacture of npn transistor

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4911467A (enExample) * 1972-05-30 1974-01-31
JPS5325633A (en) * 1976-08-21 1978-03-09 Sumitomo Metal Ind Granulation method of melted blast furnace slag
JPS5531610A (en) * 1978-08-28 1980-03-06 Nissan Motor Co Ltd Structure of bumper
JPS5797665A (en) * 1980-12-10 1982-06-17 Oki Electric Ind Co Ltd Manufacture of npn transistor

Also Published As

Publication number Publication date
JPH0464456B2 (enExample) 1992-10-15

Similar Documents

Publication Publication Date Title
JPS6057214B2 (ja) 電気発光物質の製法
JPH03203388A (ja) 半導体発光素子およびその製造方法
TWI252595B (en) Nitride semiconductor; light-emitting device, light-emitting diode, laser device and lamp using the semiconductor; and production methods thereof
JPS5863183A (ja) ２−６族間化合物の結晶成長法
US3676228A (en) Method of making a p-n junction device
JPS581539B2 (ja) エピタキシヤルウエハ−
CN109449223B (zh) 铟镓氮铋材料和使用该材料的激光器和探测器及制备方法
JP2579326B2 (ja) エピタキシャル・ウエハ及び発光ダイオード
JPH08335715A (ja) エピタキシャルウエハおよびその製造方法
JPS61159725A (ja) 化合物半導体液相成長法
JPH03211888A (ja) 半導体発光素子及びその製造方法
RU2604476C2 (ru) Способ повышения качества туннельного перехода в структуре солнечных элементов
JPS5918877B2 (ja) 光半導体素子
JPH08139358A (ja) エピタキシャルウエーハ
JPH0425184A (ja) 炭化珪素を用いたｐｎ接合型発光ダイオードの製造方法
JPH06342935A (ja) ＧａＰ純緑色発光素子基板
JPS58165386A (ja) 半導体発光素子およびその製造方法
JPH04137771A (ja) 半導体装置
JPS5918686A (ja) ガリウム燐発光ダイオ−ド
JP3116495B2 (ja) 発光ダイオードの製造方法
JP2841849B2 (ja) エピタキシャルウェハの製造方法
JPS5814400B2 (ja) 燐化ガリウム赤色発光素子の液相成長法
JPS62186576A (ja) 砒化ガリウム赤外発光ダイオ−ドの製造方法
JPS61156727A (ja) 化合物半導体装置およびその製法
JP4884699B2 (ja) 化合物半導体積層構造及びそれを用いた発光素子