JPS61155292A - 気相成長装置 - Google Patents
気相成長装置Info
- Publication number
- JPS61155292A JPS61155292A JP27732784A JP27732784A JPS61155292A JP S61155292 A JPS61155292 A JP S61155292A JP 27732784 A JP27732784 A JP 27732784A JP 27732784 A JP27732784 A JP 27732784A JP S61155292 A JPS61155292 A JP S61155292A
- Authority
- JP
- Japan
- Prior art keywords
- gas
- reaction tube
- substrate
- reaction
- raw material
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000007789 gas Substances 0.000 claims abstract description 56
- 238000006243 chemical reaction Methods 0.000 claims abstract description 55
- 239000013078 crystal Substances 0.000 claims abstract description 41
- 239000000758 substrate Substances 0.000 claims abstract description 37
- 239000011261 inert gas Substances 0.000 claims abstract description 9
- 238000007599 discharging Methods 0.000 claims abstract description 6
- 238000001947 vapour-phase growth Methods 0.000 claims description 20
- 239000002994 raw material Substances 0.000 claims description 19
- 230000015572 biosynthetic process Effects 0.000 abstract description 2
- 230000007547 defect Effects 0.000 abstract description 2
- 238000000034 method Methods 0.000 abstract description 2
- 239000007858 starting material Substances 0.000 abstract 3
- 238000007796 conventional method Methods 0.000 abstract 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 13
- 229910002804 graphite Inorganic materials 0.000 description 13
- 239000010439 graphite Substances 0.000 description 13
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 10
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 9
- 239000010453 quartz Substances 0.000 description 8
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 8
- RBFQJDQYXXHULB-UHFFFAOYSA-N arsane Chemical compound [AsH3] RBFQJDQYXXHULB-UHFFFAOYSA-N 0.000 description 4
- 229910052785 arsenic Inorganic materials 0.000 description 4
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 4
- XCZXGTMEAKBVPV-UHFFFAOYSA-N trimethylgallium Chemical compound C[Ga](C)C XCZXGTMEAKBVPV-UHFFFAOYSA-N 0.000 description 4
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 3
- 229910052733 gallium Inorganic materials 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 239000010409 thin film Substances 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- MDPILPRLPQYEEN-UHFFFAOYSA-N aluminium arsenide Chemical compound [As]#[Al] MDPILPRLPQYEEN-UHFFFAOYSA-N 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000002244 precipitate Substances 0.000 description 2
- 238000000927 vapour-phase epitaxy Methods 0.000 description 2
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 125000004435 hydrogen atom Chemical class [H]* 0.000 description 1
- IXCSERBJSXMMFS-UHFFFAOYSA-N hydrogen chloride Substances Cl.Cl IXCSERBJSXMMFS-UHFFFAOYSA-N 0.000 description 1
- 229910000041 hydrogen chloride Inorganic materials 0.000 description 1
- 230000006698 induction Effects 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000004943 liquid phase epitaxy Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000001451 molecular beam epitaxy Methods 0.000 description 1
- 239000002243 precursor Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- JLTRXTDYQLMHGR-UHFFFAOYSA-N trimethylaluminium Chemical compound C[Al](C)C JLTRXTDYQLMHGR-UHFFFAOYSA-N 0.000 description 1
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP27732784A JPS61155292A (ja) | 1984-12-26 | 1984-12-26 | 気相成長装置 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP27732784A JPS61155292A (ja) | 1984-12-26 | 1984-12-26 | 気相成長装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS61155292A true JPS61155292A (ja) | 1986-07-14 |
| JPH0529637B2 JPH0529637B2 (enrdf_load_stackoverflow) | 1993-05-06 |
Family
ID=17581980
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP27732784A Granted JPS61155292A (ja) | 1984-12-26 | 1984-12-26 | 気相成長装置 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS61155292A (enrdf_load_stackoverflow) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH02291113A (ja) * | 1989-04-29 | 1990-11-30 | Toyoda Gosei Co Ltd | 窒化ガリウム系化合物半導体の気相成長装置 |
| US5180571A (en) * | 1990-05-30 | 1993-01-19 | Idemitsu Petrochemical Company Limited | Process for the preparation of diamond |
-
1984
- 1984-12-26 JP JP27732784A patent/JPS61155292A/ja active Granted
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH02291113A (ja) * | 1989-04-29 | 1990-11-30 | Toyoda Gosei Co Ltd | 窒化ガリウム系化合物半導体の気相成長装置 |
| US5180571A (en) * | 1990-05-30 | 1993-01-19 | Idemitsu Petrochemical Company Limited | Process for the preparation of diamond |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0529637B2 (enrdf_load_stackoverflow) | 1993-05-06 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| EXPY | Cancellation because of completion of term |