JPS61147561A - ボンデイングワイヤ - Google Patents

ボンデイングワイヤ

Info

Publication number
JPS61147561A
JPS61147561A JP59270051A JP27005184A JPS61147561A JP S61147561 A JPS61147561 A JP S61147561A JP 59270051 A JP59270051 A JP 59270051A JP 27005184 A JP27005184 A JP 27005184A JP S61147561 A JPS61147561 A JP S61147561A
Authority
JP
Japan
Prior art keywords
wire
bonding
bonding wire
hollow
semiconductor chip
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP59270051A
Other languages
English (en)
Inventor
Taketoshi Uchida
内田　武敏
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Priority to JP59270051A priority Critical patent/JPS61147561A/ja
Publication of JPS61147561A publication Critical patent/JPS61147561A/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/495—Lead-frames or other flat leads
    • H01L23/49517—Additional leads
    • H01L23/4952—Additional leads the additional leads being a bump or a wire
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/4501—Shape
    • H01L2224/45012—Cross-sectional shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45117—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
    • H01L2224/45124—Aluminium (Al) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/45195—Material with a principal constituent of the material being a gas not provided for in groups H01L2224/451 - H01L2224/45191
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/4554—Coating
    • H01L2224/45565—Single coating layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/4554—Coating
    • H01L2224/45599—Material
    • H01L2224/456—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45638—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45644—Gold (Au) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
    • H01L2224/48465—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/4847—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/485—Material
    • H01L2224/48505—Material at the bonding interface
    • H01L2224/48699—Principal constituent of the connecting portion of the wire connector being Aluminium (Al)
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01079—Gold [Au]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01082—Lead [Pb]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Wire Bonding (AREA)

Abstract

(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。

Description

【発明の詳細な説明】 〔発明の技術分野〕 本発明は半導体装置における電気的接続に用いられるボ
ンディングワイヤに関する。
〔発明の技術的前頭とその問題点〕
半導体装置のｗｌＪ造において、パッケージのマウント
部あるいはリードフレームのベッド上にマウントされた
半導体チップの電極とインナーリードとを電気的に接続
するため、金あるいはアルミニウム等のボンディングワ
イヤフが用いられ（いる。
第５図は従来から使用されているボンディングワイヤ１
０の断面形状を示してＪ５す、中実な線材で構成されて
いる。そして、この線材の−・端部が半導体チップの電
極と熱圧着あるいは超音波ボンディングで接続され、他
端部がインナーリードと同様な方法で接続される。
このボンディングワイ＼７１０の材質としては、信頼性
を向上させ観点から、近年、耐食性の大きな金線が使用
されている。従って、半導体チップのパッケージがセラ
ミックからプラスチックに移行して安価となる傾向の中
では金線の材料費の占める割合が大ぎく、半導体装置の
低廉化を妨げる要因となっている。
また、この中実の従来のボンディングワイＡ７１０はボ
ンディング時のストレス等により亀裂が生じ易く、この
亀裂が生じると、その模の樹脂封止の際に断線となるお
それがある。また、熱圧着で接続する場合には水素ガス
でボンディングワイヤを焼き切る際に、焼き切った部分
が大きなボール状となり、このため、半導体チップのボ
ンディングパッドの接続用面積を広くどる必要があった
。
さらには、低廉化のためボンディングワイヤ径を小さく
した場合には、樹脂封止の際の樹脂の流動力でワイヤが
流れたり切断したりするという問題があった。
〔発明の目的〕
本発明は上記事情を考慮してなされたもので、強度が強
く、しから使用する材料が少なく安価とすることが可能
なボンディングワイヤを提供することを目的とする。
〔発明の概要〕
上記目的を達成するため、本発明のボンディングワイヤ
は中空にしたものである。
〔発明の実施例〕
以下、本発明の一実施例を第１図ないし第４図を参照し
′Ｃ！−１体的に説明する。
第１図は本発明の−・実施例の断面図であり、ボンディ
ングワイＶ１は内部に空洞２が形成された中空形状とな
っている。この空洞２の形成でワイヤ全体の強度が向上
し、断線率が低くなる。ここで、このワイ曳７１の外径
と内径の比は接続される半導体チップやインナーリード
の材質あるいはボンディングワイヤに加わるストレス等
によって適宜、選定される。また、材質としては耐食性
が大きく、しかも加工性が良好な金線が望ましいが、ア
ルミニウム線であってもよい。
第２図は前記ボンディングワイヤ１を使用した半導体装
置の断面図である。リードフレームのベッド３上に半導
体チップ４がマウントされ、この半導体チップ４の電極
とリードフレームのインナーリード６との間に中空のボ
ンディングワイヤ１が接続されている。そして、このワ
イヤ１と半導体チップ４を含む領域を合成樹脂７で封止
し、この合成樹脂７からアウターリード８が外部に延び
ている。
第３図は水素ガストーチでボンディングワイヤを焼き切
り、その端部を半導体チップのポンディングパッドに接
続した状態であり、第３図（イ）のように本発明のボン
ディングワイヤは中空であるため、端部に形成されるボ
ール９が第３図（ロ）で示寸従来の中実なボンディング
ヮイＶ１０のボール１１に比べて小ざく、従って、ポン
ディングパッドの面積を小さくすることができる。
又、第４図は超音波ボンディングで接続した場合を示し
ており、中空の線材であっても第４図（イ）のように接
続時に空洞が押し潰されるため、第４図（ロ）の従来の
接続状態と何等変わらない。
〔発明の効果］ 以上の通り、本発明はボンディングヮイＶを中空線材ど
したから、使用される材料が少なく、従って、材料費を
大幅に縮小することができる。また、熱１１着（゛接続
する際には［９ｉ面積が小さくなるため、半導体チップ
のポンディングパッドの接続用面積を小さくすることが
Ｃき、半導体チップの縮小化が図られる。さらには、ス
トレス等が加ゎ−＞’（ｂ中空状で強度が人さいため容
易に断線することがない。
【図面の簡単な説明】
第１図は本発明の一実施例によるボンｉ゛イングワイヤ
の断面図、第２図は同ボンディングワイヤを使用した半
導体装置の断面図、第３図（イ）。 （ロ）及び第４図（イ）、（ロ）は同ボンディングワイ
ヤの接続状態を従来のものと比較して示した図、第５図
は従来のボンディングワイヤの断面図である。 １・・・ボンディングワイヤ、２・・・空洞、４・・・
半導体チップ、６・・・インナーリード。 出願人代理人　　猪　　股　　　　清 も１図 ■ 鷺　３ （イ） （イ） ６５　閉 も２　図 圀 （Ｏ） 閉

Claims (1)

  1. 【特許請求の範囲】 １、中空の線材であることを特徴とするボンディングワ
    イヤ。 ２、金線であることを特徴とする特許請求の範囲第１項
    記載のボンディングワイヤ。
JP59270051A 1984-12-21 1984-12-21 ボンデイングワイヤ Pending JPS61147561A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP59270051A JPS61147561A (ja) 1984-12-21 1984-12-21 ボンデイングワイヤ

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59270051A JPS61147561A (ja) 1984-12-21 1984-12-21 ボンデイングワイヤ

Publications (1)

Publication Number Publication Date
JPS61147561A true JPS61147561A (ja) 1986-07-05

Family

ID=17480839

Family Applications (1)

Application Number Title Priority Date Filing Date
JP59270051A Pending JPS61147561A (ja) 1984-12-21 1984-12-21 ボンデイングワイヤ

Country Status (1)

Country Link
JP (1) JPS61147561A (ja)

Similar Documents

Publication Publication Date Title
JP3765778B2 (ja) ワイヤボンディング用キャピラリ及びこれを用いたワイヤボンディング方法
US4705204A (en) Method of ball forming for wire bonding
US5662261A (en) Wire bonding capillary
US4974767A (en) Double cone wire bonding capillary
JPS61236130A (ja) 半導体装置
JPS60223149A (ja) 半導体装置
JPS61147561A (ja) ボンデイングワイヤ
JPS60171733A (ja) 半導体装置
US8138081B2 (en) Aluminum bump bonding for fine aluminum wire
JPS63244633A (ja) ワイヤボンデイング方法
US6278191B1 (en) Bond pad sealing using wire bonding
JPS61189652A (ja) 半導体装置
JPH01215030A (ja) 樹脂封止型半導体装置
JPS62154769A (ja) 半導体装置
JPS58199548A (ja) リ−ドフレ−ム
JPS59208767A (ja) 半導体装置
KR970003184Y1 (ko) 와이어 본더의 캐필러리
JPH04155949A (ja) 樹脂封止型半導体装置
JPS63238235A (ja) ボンデイングワイヤ
JPS5790952A (en) Bonding wire
JPH0739237Y2 (ja) 半導体装置
JPH0294463A (ja) 半導体装置
JPS6379927A (ja) ボンデイングワイヤ
JPH04196471A (ja) 半導体装置
JP4123596B2 (ja) 半導体圧力センサ