JPS6114677B2 - - Google Patents
Info
- Publication number
- JPS6114677B2 JPS6114677B2 JP54103978A JP10397879A JPS6114677B2 JP S6114677 B2 JPS6114677 B2 JP S6114677B2 JP 54103978 A JP54103978 A JP 54103978A JP 10397879 A JP10397879 A JP 10397879A JP S6114677 B2 JPS6114677 B2 JP S6114677B2
- Authority
- JP
- Japan
- Prior art keywords
- insulating film
- resist mask
- layer
- gate electrode
- mask
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/80—FETs having rectifying junction gate electrodes
Landscapes
- Junction Field-Effect Transistors (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10397879A JPS5627975A (en) | 1979-08-17 | 1979-08-17 | Manufacture of compound semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10397879A JPS5627975A (en) | 1979-08-17 | 1979-08-17 | Manufacture of compound semiconductor device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5627975A JPS5627975A (en) | 1981-03-18 |
| JPS6114677B2 true JPS6114677B2 (enExample) | 1986-04-19 |
Family
ID=14368404
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP10397879A Granted JPS5627975A (en) | 1979-08-17 | 1979-08-17 | Manufacture of compound semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5627975A (enExample) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2681148B2 (ja) * | 1986-07-29 | 1997-11-26 | 工業技術院長 | 薄膜接合電界効果素子の製造方法 |
-
1979
- 1979-08-17 JP JP10397879A patent/JPS5627975A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5627975A (en) | 1981-03-18 |
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