JPS61139057A - 半導体集積回路装置の製造方法 - Google Patents
半導体集積回路装置の製造方法Info
- Publication number
- JPS61139057A JPS61139057A JP59261075A JP26107584A JPS61139057A JP S61139057 A JPS61139057 A JP S61139057A JP 59261075 A JP59261075 A JP 59261075A JP 26107584 A JP26107584 A JP 26107584A JP S61139057 A JPS61139057 A JP S61139057A
- Authority
- JP
- Japan
- Prior art keywords
- conductivity type
- region
- forming
- base region
- active base
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000004519 manufacturing process Methods 0.000 title claims description 22
- 239000004065 semiconductor Substances 0.000 title claims description 22
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims abstract description 29
- 230000000903 blocking effect Effects 0.000 claims abstract description 10
- 238000005468 ion implantation Methods 0.000 claims abstract description 8
- 239000010410 layer Substances 0.000 claims description 32
- 238000009792 diffusion process Methods 0.000 claims description 30
- 239000012535 impurity Substances 0.000 claims description 16
- 238000000605 extraction Methods 0.000 claims description 13
- 239000000758 substrate Substances 0.000 claims description 10
- 238000005530 etching Methods 0.000 claims description 2
- 230000005669 field effect Effects 0.000 claims description 2
- 239000002344 surface layer Substances 0.000 claims description 2
- 229910052796 boron Inorganic materials 0.000 abstract description 9
- 230000003321 amplification Effects 0.000 abstract description 7
- 238000003199 nucleic acid amplification method Methods 0.000 abstract description 7
- -1 boron ions Chemical class 0.000 abstract description 6
- 238000000034 method Methods 0.000 description 18
- 229910052698 phosphorus Inorganic materials 0.000 description 9
- 239000011574 phosphorus Substances 0.000 description 9
- 229910052785 arsenic Inorganic materials 0.000 description 8
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 8
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 6
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 6
- 230000015572 biosynthetic process Effects 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- 230000003647 oxidation Effects 0.000 description 3
- 238000007254 oxidation reaction Methods 0.000 description 3
- 238000000059 patterning Methods 0.000 description 3
- 235000012431 wafers Nutrition 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 230000001133 acceleration Effects 0.000 description 2
- 238000000137 annealing Methods 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 230000000295 complement effect Effects 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- BHEPBYXIRTUNPN-UHFFFAOYSA-N hydridophosphorus(.) (triplet) Chemical compound [PH] BHEPBYXIRTUNPN-UHFFFAOYSA-N 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 238000002955 isolation Methods 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 238000002161 passivation Methods 0.000 description 2
- XHXFXVLFKHQFAL-UHFFFAOYSA-N phosphoryl trichloride Chemical compound ClP(Cl)(Cl)=O XHXFXVLFKHQFAL-UHFFFAOYSA-N 0.000 description 2
- 239000005368 silicate glass Substances 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 229910019213 POCl3 Inorganic materials 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 1
- FFBHFFJDDLITSX-UHFFFAOYSA-N benzyl N-[2-hydroxy-4-(3-oxomorpholin-4-yl)phenyl]carbamate Chemical compound OC1=C(NC(=O)OCC2=CC=CC=C2)C=CC(=C1)N1CCOCC1=O FFBHFFJDDLITSX-UHFFFAOYSA-N 0.000 description 1
- 239000005380 borophosphosilicate glass Substances 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 239000007772 electrode material Substances 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 210000003127 knee Anatomy 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/01—Manufacture or treatment
- H10D84/0107—Integrating at least one component covered by H10D12/00 or H10D30/00 with at least one component covered by H10D8/00, H10D10/00 or H10D18/00, e.g. integrating IGFETs with BJTs
- H10D84/0109—Integrating at least one component covered by H10D12/00 or H10D30/00 with at least one component covered by H10D8/00, H10D10/00 or H10D18/00, e.g. integrating IGFETs with BJTs the at least one component covered by H10D12/00 or H10D30/00 being a MOS device
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/01—Manufacture or treatment
- H10D84/02—Manufacture or treatment characterised by using material-based technologies
- H10D84/03—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
- H10D84/038—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe
Landscapes
- Element Separation (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Bipolar Transistors (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59261075A JPS61139057A (ja) | 1984-12-11 | 1984-12-11 | 半導体集積回路装置の製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59261075A JPS61139057A (ja) | 1984-12-11 | 1984-12-11 | 半導体集積回路装置の製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS61139057A true JPS61139057A (ja) | 1986-06-26 |
| JPH0369179B2 JPH0369179B2 (enrdf_load_stackoverflow) | 1991-10-31 |
Family
ID=17356727
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP59261075A Granted JPS61139057A (ja) | 1984-12-11 | 1984-12-11 | 半導体集積回路装置の製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS61139057A (enrdf_load_stackoverflow) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6043541A (en) * | 1996-01-16 | 2000-03-28 | Micron Technology, Inc. | Bipolar-CMOS (BiCMOS) process for fabricating integrated circuits |
| US8921914B2 (en) | 2005-07-20 | 2014-12-30 | Micron Technology, Inc. | Devices with nanocrystals and methods of formation |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS57134956A (en) * | 1981-02-14 | 1982-08-20 | Mitsubishi Electric Corp | Manufacture of semiconductor integrated circuit |
| JPS58225663A (ja) * | 1982-06-23 | 1983-12-27 | Toshiba Corp | 半導体装置の製造方法 |
-
1984
- 1984-12-11 JP JP59261075A patent/JPS61139057A/ja active Granted
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS57134956A (en) * | 1981-02-14 | 1982-08-20 | Mitsubishi Electric Corp | Manufacture of semiconductor integrated circuit |
| JPS58225663A (ja) * | 1982-06-23 | 1983-12-27 | Toshiba Corp | 半導体装置の製造方法 |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6043541A (en) * | 1996-01-16 | 2000-03-28 | Micron Technology, Inc. | Bipolar-CMOS (BiCMOS) process for fabricating integrated circuits |
| US6475850B2 (en) | 1996-01-16 | 2002-11-05 | Micron Technology, Inc. | Bipolar-CMOS (BiCMOS) process for fabricating integrated circuits |
| US8921914B2 (en) | 2005-07-20 | 2014-12-30 | Micron Technology, Inc. | Devices with nanocrystals and methods of formation |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0369179B2 (enrdf_load_stackoverflow) | 1991-10-31 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| EXPY | Cancellation because of completion of term |