JPS61137324A - パタ−ン形成方法 - Google Patents

パタ−ン形成方法

Info

Publication number
JPS61137324A
JPS61137324A JP59259537A JP25953784A JPS61137324A JP S61137324 A JPS61137324 A JP S61137324A JP 59259537 A JP59259537 A JP 59259537A JP 25953784 A JP25953784 A JP 25953784A JP S61137324 A JPS61137324 A JP S61137324A
Authority
JP
Japan
Prior art keywords
pattern
pmma
organic resin
far ultraviolet
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP59259537A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0235449B2 (enrdf_load_stackoverflow
Inventor
Yoshihiro Todokoro
義博 戸所
Yasuhiro Takasu
高須 保弘
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electronics Corp filed Critical Matsushita Electronics Corp
Priority to JP59259537A priority Critical patent/JPS61137324A/ja
Publication of JPS61137324A publication Critical patent/JPS61137324A/ja
Publication of JPH0235449B2 publication Critical patent/JPH0235449B2/ja
Granted legal-status Critical Current

Links

Classifications

    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/708Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70858Environment aspects, e.g. pressure of beam-path gas, temperature
    • G03F7/70866Environment aspects, e.g. pressure of beam-path gas, temperature of mask or workpiece
    • G03F7/70875Temperature, e.g. temperature control of masks or workpieces via control of stage temperature
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Environmental & Geological Engineering (AREA)
  • Epidemiology (AREA)
  • Atmospheric Sciences (AREA)
  • Public Health (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Toxicology (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
JP59259537A 1984-12-07 1984-12-07 パタ−ン形成方法 Granted JPS61137324A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP59259537A JPS61137324A (ja) 1984-12-07 1984-12-07 パタ−ン形成方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59259537A JPS61137324A (ja) 1984-12-07 1984-12-07 パタ−ン形成方法

Publications (2)

Publication Number Publication Date
JPS61137324A true JPS61137324A (ja) 1986-06-25
JPH0235449B2 JPH0235449B2 (enrdf_load_stackoverflow) 1990-08-10

Family

ID=17335483

Family Applications (1)

Application Number Title Priority Date Filing Date
JP59259537A Granted JPS61137324A (ja) 1984-12-07 1984-12-07 パタ−ン形成方法

Country Status (1)

Country Link
JP (1) JPS61137324A (enrdf_load_stackoverflow)

Also Published As

Publication number Publication date
JPH0235449B2 (enrdf_load_stackoverflow) 1990-08-10

Similar Documents

Publication Publication Date Title
DE3784541D1 (de) Verfahren zur herstellung einer niedergeschlagenen schicht.
JPS62115166A (ja) 光マスクとその製造方法
JPS61137324A (ja) パタ−ン形成方法
US5104481A (en) Method for fabricating laser generated I.C. masks
JPS6351641A (ja) 単結晶または多結晶Si膜の微細パタ−ン形成方法
JPH03129349A (ja) フォトマスクの製法
JPS6049630A (ja) 半導体装置の製造方法
US5260235A (en) Method of making laser generated I. C. pattern for masking
JP2942825B1 (ja) 面外分岐ミラーを有する光集積回路の製造方法
JP2004272049A (ja) Si−O−Si結合を含む固体化合物膜の形成方法、固体化合物膜の酸化ケイ素への改質方法、パターン形成方法及びリソグラフイー用レジスト
JPS56140345A (en) Formation of pattern
JPS6116521A (ja) レジスト膜除去方法
JPS6029921B2 (ja) 回折格子作製方法
JP2617923B2 (ja) パターン形成方法
WO1993017452A1 (en) Laser generated i.c. mask
JPS6097625A (ja) パタ−ン形成方法
JPH01316926A (ja) 半導体薄膜結晶の製造方法
JPH02140748A (ja) レジストパターン形成方法
JPS60217630A (ja) 遠紫外光用レジスト露光方法
JPH0685070B2 (ja) レジストパターンの現像方法
JPS5898922A (ja) パタ−ン形成方法
JPS59194435A (ja) 半導体装置のパタ−ン形成方法
JPS5922375B2 (ja) キンゾクヒマクノケイセイホウホウ
JPH01107528A (ja) パターン形成方法
JPS62135821A (ja) パタ−ン形成方法