JPS61137318A - 半導体装置の製造方法 - Google Patents

半導体装置の製造方法

Info

Publication number
JPS61137318A
JPS61137318A JP59259751A JP25975184A JPS61137318A JP S61137318 A JPS61137318 A JP S61137318A JP 59259751 A JP59259751 A JP 59259751A JP 25975184 A JP25975184 A JP 25975184A JP S61137318 A JPS61137318 A JP S61137318A
Authority
JP
Japan
Prior art keywords
glass
mask
semiconductor device
glass film
electrode metal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP59259751A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0550851B2 (enExample
Inventor
Tadao Takano
高野　忠夫
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Rectifier Corp Japan Ltd
Original Assignee
International Rectifier Corp Japan Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Rectifier Corp Japan Ltd filed Critical International Rectifier Corp Japan Ltd
Priority to JP59259751A priority Critical patent/JPS61137318A/ja
Publication of JPS61137318A publication Critical patent/JPS61137318A/ja
Publication of JPH0550851B2 publication Critical patent/JPH0550851B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H10D64/011—Manufacture or treatment of electrodes ohmically coupled to a semiconductor

Landscapes

  • Formation Of Insulating Films (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Electrodes Of Semiconductors (AREA)
JP59259751A 1984-12-08 1984-12-08 半導体装置の製造方法 Granted JPS61137318A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP59259751A JPS61137318A (ja) 1984-12-08 1984-12-08 半導体装置の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59259751A JPS61137318A (ja) 1984-12-08 1984-12-08 半導体装置の製造方法

Publications (2)

Publication Number Publication Date
JPS61137318A true JPS61137318A (ja) 1986-06-25
JPH0550851B2 JPH0550851B2 (enExample) 1993-07-30

Family

ID=17338443

Family Applications (1)

Application Number Title Priority Date Filing Date
JP59259751A Granted JPS61137318A (ja) 1984-12-08 1984-12-08 半導体装置の製造方法

Country Status (1)

Country Link
JP (1) JPS61137318A (enExample)

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS54121732A (en) * 1978-03-15 1979-09-21 Nippon Telegr & Teleph Corp <Ntt> Pattern transfer method

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS54121732A (en) * 1978-03-15 1979-09-21 Nippon Telegr & Teleph Corp <Ntt> Pattern transfer method

Also Published As

Publication number Publication date
JPH0550851B2 (enExample) 1993-07-30

Similar Documents

Publication Publication Date Title
JPS61137318A (ja) 半導体装置の製造方法
JPS61113062A (ja) フオトマスク
JP2628555B2 (ja) 半導体装置の製造方法
JP2666393B2 (ja) 半導体装置
JP2666383B2 (ja) 半導体装置
JPS6347951A (ja) 半導体装置の製造方法
KR100220796B1 (ko) 반도체 기판의 범프 에어리어 형성방법
JPS62281348A (ja) 半導体装置の製造方法
KR0137619B1 (ko) 반도체 장치 제조 방법
JPS5984529A (ja) パタ−ン形成方法
KR0172773B1 (ko) 반도체 소자의 패드 형성 방법
KR100550416B1 (ko) 반도체 소자의 제조 방법
JPS5885549A (ja) 半導体装置の製造方法
KR100308787B1 (ko) 광검출소자제조방법
JP3222344B2 (ja) 発光ダイオードアレイの製造方法
KR100374229B1 (ko) 반도체소자의금속배선형성방법
KR100291412B1 (ko) 포토레지스트도포방법
KR100239436B1 (ko) 반도체 소자의 제조 방법
JP2001068545A (ja) 半導体装置の製造方法
JPS611049A (ja) 固体撮像素子の製造方法
JPS60218848A (ja) 結晶基板のエツチング法
JPH0349212A (ja) 半導体装置の露光パターン用位置合わせマークの形成方法
JPS61141157A (ja) 半導体素子の製造方法
JPS63312645A (ja) 半導体装置の製造方法
KR19990055460A (ko) 반도체소자의 패드 형성방법

Legal Events

Date Code Title Description
LAPS Cancellation because of no payment of annual fees