JPS61129867A - 半導体装置 - Google Patents

半導体装置

Info

Publication number
JPS61129867A
JPS61129867A JP59252319A JP25231984A JPS61129867A JP S61129867 A JPS61129867 A JP S61129867A JP 59252319 A JP59252319 A JP 59252319A JP 25231984 A JP25231984 A JP 25231984A JP S61129867 A JPS61129867 A JP S61129867A
Authority
JP
Japan
Prior art keywords
region
field plate
plate electrode
semiconductor layer
type
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP59252319A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0464458B2 (forum.php
Inventor
Koji Shirai
浩司 白井
Takeshi Kawamura
健 河村
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Priority to JP59252319A priority Critical patent/JPS61129867A/ja
Priority to KR1019850008747A priority patent/KR890004495B1/ko
Priority to US06/802,372 priority patent/US4707720A/en
Priority to EP85115145A priority patent/EP0190423B1/en
Priority to DE8585115145T priority patent/DE3585225D1/de
Publication of JPS61129867A publication Critical patent/JPS61129867A/ja
Publication of JPH0464458B2 publication Critical patent/JPH0464458B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/111—Field plates
    • H10D64/112—Field plates comprising multiple field plate segments
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H10D12/411—Insulated-gate bipolar transistors [IGBT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
    • H10D30/66—Vertical DMOS [VDMOS] FETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
    • H10D30/66—Vertical DMOS [VDMOS] FETs
    • H10D30/663—Vertical DMOS [VDMOS] FETs having both source contacts and drain contacts on the same surface, i.e. up-drain VDMOS
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/101—Integrated devices comprising main components and built-in components, e.g. IGBT having built-in freewheel diode
    • H10D84/121—BJTs having built-in components
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
    • H10D62/149—Source or drain regions of field-effect devices
    • H10D62/151—Source or drain regions of field-effect devices of IGFETs 

Landscapes

  • Bipolar Transistors (AREA)
JP59252319A 1984-11-29 1984-11-29 半導体装置 Granted JPS61129867A (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP59252319A JPS61129867A (ja) 1984-11-29 1984-11-29 半導体装置
KR1019850008747A KR890004495B1 (ko) 1984-11-29 1985-11-22 반도체 장치
US06/802,372 US4707720A (en) 1984-11-29 1985-11-27 Semiconductor memory device
EP85115145A EP0190423B1 (en) 1984-11-29 1985-11-29 Planar semiconductor device having a field plate electrode
DE8585115145T DE3585225D1 (de) 1984-11-29 1985-11-29 Planare halbleitervorrichtung mit einer feldplatte.

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59252319A JPS61129867A (ja) 1984-11-29 1984-11-29 半導体装置

Publications (2)

Publication Number Publication Date
JPS61129867A true JPS61129867A (ja) 1986-06-17
JPH0464458B2 JPH0464458B2 (forum.php) 1992-10-15

Family

ID=17235598

Family Applications (1)

Application Number Title Priority Date Filing Date
JP59252319A Granted JPS61129867A (ja) 1984-11-29 1984-11-29 半導体装置

Country Status (1)

Country Link
JP (1) JPS61129867A (forum.php)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0750303A (ja) * 1994-04-15 1995-02-21 Nippondenso Co Ltd 半導体装置の製造方法
US5475258A (en) * 1992-10-30 1995-12-12 Nippondenso Co., Ltd. Power semiconductor device with protective element
CN103681808A (zh) * 2012-09-09 2014-03-26 苏州英能电子科技有限公司 含场板结构的横向双极型晶体管

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5475258A (en) * 1992-10-30 1995-12-12 Nippondenso Co., Ltd. Power semiconductor device with protective element
JPH0750303A (ja) * 1994-04-15 1995-02-21 Nippondenso Co Ltd 半導体装置の製造方法
CN103681808A (zh) * 2012-09-09 2014-03-26 苏州英能电子科技有限公司 含场板结构的横向双极型晶体管

Also Published As

Publication number Publication date
JPH0464458B2 (forum.php) 1992-10-15

Similar Documents

Publication Publication Date Title
US4399449A (en) Composite metal and polysilicon field plate structure for high voltage semiconductor devices
JP3417013B2 (ja) 絶縁ゲート型バイポーラトランジスタ
JPS58212164A (ja) バイポ−ラメモリセル
US4375717A (en) Process for producing a field-effect transistor
EP0663698B1 (en) Semiconductor device and its manufacture
JP2006173437A (ja) 半導体装置
JPS6336566A (ja) 半導体装置の製造方法
KR890004495B1 (ko) 반도체 장치
JPS6159852A (ja) 半導体装置の製造方法
US4829344A (en) Electronic semiconductor device for protecting integrated circuits against electrostatic discharges
US5202573A (en) Dual anode mos scr with anti crosstalk collecting region
JP3468571B2 (ja) 半導体装置
JPH0494576A (ja) 縦型パワーｍｏｓ　ｆｅｔ
JPS61129867A (ja) 半導体装置
JP6771433B2 (ja) 半導体装置
JP2753011B2 (ja) 高耐圧プレーナ型半導体素子およびその製造方法
JPS61129868A (ja) 半導体装置
JP2904545B2 (ja) 高耐圧プレーナ型半導体素子およびその製造方法
KR19990010738A (ko) 전력용 반도체소자 및 그 제조방법
JPH10117003A (ja) 定電圧ダイオード及びその製造方法
KR100289742B1 (ko) 반절연폴리실리콘막을이용한전력반도체장치
JPS6359262B2 (forum.php)
JP2719569B2 (ja) 半導体装置
JPS61278161A (ja) 高耐圧半導体装置
JP2003163351A (ja) 絶縁ゲート型半導体装置およびその製造方法