JPS61127180A - 電界効果トランジスタの製造方法 - Google Patents

電界効果トランジスタの製造方法

Info

Publication number
JPS61127180A
JPS61127180A JP59247019A JP24701984A JPS61127180A JP S61127180 A JPS61127180 A JP S61127180A JP 59247019 A JP59247019 A JP 59247019A JP 24701984 A JP24701984 A JP 24701984A JP S61127180 A JPS61127180 A JP S61127180A
Authority
JP
Japan
Prior art keywords
gate electrode
layer
forming
film
electrode material
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP59247019A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0360179B2 (enExample
Inventor
Kimiyoshi Yamazaki
王義 山崎
Takatomo Enoki
孝知 榎木
Kuniki Owada
大和田　邦樹
Masahiro Hirayama
昌宏 平山
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NTT Inc
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Priority to JP59247019A priority Critical patent/JPS61127180A/ja
Publication of JPS61127180A publication Critical patent/JPS61127180A/ja
Publication of JPH0360179B2 publication Critical patent/JPH0360179B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/80—FETs having rectifying junction gate electrodes
    • H10D30/87—FETs having Schottky gate electrodes, e.g. metal-semiconductor FETs [MESFET]

Landscapes

  • Junction Field-Effect Transistors (AREA)
JP59247019A 1984-11-24 1984-11-24 電界効果トランジスタの製造方法 Granted JPS61127180A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP59247019A JPS61127180A (ja) 1984-11-24 1984-11-24 電界効果トランジスタの製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59247019A JPS61127180A (ja) 1984-11-24 1984-11-24 電界効果トランジスタの製造方法

Publications (2)

Publication Number Publication Date
JPS61127180A true JPS61127180A (ja) 1986-06-14
JPH0360179B2 JPH0360179B2 (enExample) 1991-09-12

Family

ID=17157188

Family Applications (1)

Application Number Title Priority Date Filing Date
JP59247019A Granted JPS61127180A (ja) 1984-11-24 1984-11-24 電界効果トランジスタの製造方法

Country Status (1)

Country Link
JP (1) JPS61127180A (enExample)

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57103364A (en) * 1980-12-18 1982-06-26 Nippon Telegr & Teleph Corp <Ntt> Preparation of field-effect trasistor
JPS57166031A (en) * 1981-04-06 1982-10-13 Nippon Telegr & Teleph Corp <Ntt> Processing method for metallic film in semiconductor element
JPS58130575A (ja) * 1982-01-29 1983-08-04 Hitachi Ltd 電界効果トランジスタの製造方法

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57103364A (en) * 1980-12-18 1982-06-26 Nippon Telegr & Teleph Corp <Ntt> Preparation of field-effect trasistor
JPS57166031A (en) * 1981-04-06 1982-10-13 Nippon Telegr & Teleph Corp <Ntt> Processing method for metallic film in semiconductor element
JPS58130575A (ja) * 1982-01-29 1983-08-04 Hitachi Ltd 電界効果トランジスタの製造方法

Also Published As

Publication number Publication date
JPH0360179B2 (enExample) 1991-09-12

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