JPS61115328A - 半導体製造方法 - Google Patents

半導体製造方法

Info

Publication number
JPS61115328A
JPS61115328A JP23674084A JP23674084A JPS61115328A JP S61115328 A JPS61115328 A JP S61115328A JP 23674084 A JP23674084 A JP 23674084A JP 23674084 A JP23674084 A JP 23674084A JP S61115328 A JPS61115328 A JP S61115328A
Authority
JP
Japan
Prior art keywords
gas
substrate
reactor
resonance
rare gas
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP23674084A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0558565B2 (cg-RX-API-DMAC7.html
Inventor
Junichi Takahashi
淳一 高橋
Michiharu Tanabe
田部　道晴
Masahiko Maeda
前田　正彦
Yutaka Sakakibara
裕 榊原
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NTT Inc
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Priority to JP23674084A priority Critical patent/JPS61115328A/ja
Publication of JPS61115328A publication Critical patent/JPS61115328A/ja
Publication of JPH0558565B2 publication Critical patent/JPH0558565B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Drying Of Semiconductors (AREA)
JP23674084A 1984-11-12 1984-11-12 半導体製造方法 Granted JPS61115328A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP23674084A JPS61115328A (ja) 1984-11-12 1984-11-12 半導体製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP23674084A JPS61115328A (ja) 1984-11-12 1984-11-12 半導体製造方法

Publications (2)

Publication Number Publication Date
JPS61115328A true JPS61115328A (ja) 1986-06-02
JPH0558565B2 JPH0558565B2 (cg-RX-API-DMAC7.html) 1993-08-26

Family

ID=17005080

Family Applications (1)

Application Number Title Priority Date Filing Date
JP23674084A Granted JPS61115328A (ja) 1984-11-12 1984-11-12 半導体製造方法

Country Status (1)

Country Link
JP (1) JPS61115328A (cg-RX-API-DMAC7.html)

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5932122A (ja) * 1982-08-16 1984-02-21 Hitachi Ltd 表面改質装置

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5932122A (ja) * 1982-08-16 1984-02-21 Hitachi Ltd 表面改質装置

Also Published As

Publication number Publication date
JPH0558565B2 (cg-RX-API-DMAC7.html) 1993-08-26

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Legal Events

Date Code Title Description
EXPY Cancellation because of completion of term