JPS61108135A - レジストパタ−ンの形成方法 - Google Patents

レジストパタ−ンの形成方法

Info

Publication number
JPS61108135A
JPS61108135A JP59229908A JP22990884A JPS61108135A JP S61108135 A JPS61108135 A JP S61108135A JP 59229908 A JP59229908 A JP 59229908A JP 22990884 A JP22990884 A JP 22990884A JP S61108135 A JPS61108135 A JP S61108135A
Authority
JP
Japan
Prior art keywords
resist
pattern
irradiated
ultraviolet rays
deep ultraviolet
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP59229908A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0550845B2 (en, 2012
Inventor
Hiroyuki Nakamura
洋之 中村
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Dai Nippon Printing Co Ltd
Original Assignee
Dai Nippon Printing Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Dai Nippon Printing Co Ltd filed Critical Dai Nippon Printing Co Ltd
Priority to JP59229908A priority Critical patent/JPS61108135A/ja
Publication of JPS61108135A publication Critical patent/JPS61108135A/ja
Publication of JPH0550845B2 publication Critical patent/JPH0550845B2/ja
Granted legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70425—Imaging strategies, e.g. for increasing throughput or resolution, printing product fields larger than the image field or compensating lithography- or non-lithography errors, e.g. proximity correction, mix-and-match, stitching or double patterning
    • G03F7/7045—Hybrid exposures, i.e. multiple exposures of the same area using different types of exposure apparatus, e.g. combining projection, proximity, direct write, interferometric, UV, x-ray or particle beam
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
JP59229908A 1984-10-31 1984-10-31 レジストパタ−ンの形成方法 Granted JPS61108135A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP59229908A JPS61108135A (ja) 1984-10-31 1984-10-31 レジストパタ−ンの形成方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59229908A JPS61108135A (ja) 1984-10-31 1984-10-31 レジストパタ−ンの形成方法

Publications (2)

Publication Number Publication Date
JPS61108135A true JPS61108135A (ja) 1986-05-26
JPH0550845B2 JPH0550845B2 (en, 2012) 1993-07-30

Family

ID=16899614

Family Applications (1)

Application Number Title Priority Date Filing Date
JP59229908A Granted JPS61108135A (ja) 1984-10-31 1984-10-31 レジストパタ−ンの形成方法

Country Status (1)

Country Link
JP (1) JPS61108135A (en, 2012)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6143473A (en) * 1998-05-20 2000-11-07 Fujitsu Limited Film patterning method utilizing post-development residue remover
US20100328809A1 (en) * 2009-06-24 2010-12-30 Jo Inagaki Method for removing resist and for producing a magnetic recording medium, and systems thereof

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5518638A (en) * 1978-07-27 1980-02-08 Chiyou Lsi Gijutsu Kenkyu Kumiai Ionized radiation sensitive positive type resist
JPS5833246A (ja) * 1981-08-24 1983-02-26 Oki Electric Ind Co Ltd ポジ型レジストのパタ−ン形成方法
JPS6177852A (ja) * 1984-09-26 1986-04-21 Fujitsu Ltd パターン形成方法

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5518638A (en) * 1978-07-27 1980-02-08 Chiyou Lsi Gijutsu Kenkyu Kumiai Ionized radiation sensitive positive type resist
JPS5833246A (ja) * 1981-08-24 1983-02-26 Oki Electric Ind Co Ltd ポジ型レジストのパタ−ン形成方法
JPS6177852A (ja) * 1984-09-26 1986-04-21 Fujitsu Ltd パターン形成方法

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6143473A (en) * 1998-05-20 2000-11-07 Fujitsu Limited Film patterning method utilizing post-development residue remover
US20100328809A1 (en) * 2009-06-24 2010-12-30 Jo Inagaki Method for removing resist and for producing a magnetic recording medium, and systems thereof
US8679732B2 (en) * 2009-06-24 2014-03-25 HGST Netherlands B.V. Method for removing resist and for producing a magnetic recording medium, and systems thereof

Also Published As

Publication number Publication date
JPH0550845B2 (en, 2012) 1993-07-30

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