JPS61103531A - 真空処理装置における基板の冷却機構 - Google Patents

真空処理装置における基板の冷却機構

Info

Publication number
JPS61103531A
JPS61103531A JP22300884A JP22300884A JPS61103531A JP S61103531 A JPS61103531 A JP S61103531A JP 22300884 A JP22300884 A JP 22300884A JP 22300884 A JP22300884 A JP 22300884A JP S61103531 A JPS61103531 A JP S61103531A
Authority
JP
Japan
Prior art keywords
substrate
cooling
substrate holder
cooling gas
body part
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP22300884A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6324411B2 (enrdf_load_stackoverflow
Inventor
Izumi Nakayama
泉 中山
Toshio Kusumoto
淑郎 楠本
Hiroshi Matsuo
松尾　弘史
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Ulvac Inc
Original Assignee
Ulvac Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ulvac Inc filed Critical Ulvac Inc
Priority to JP22300884A priority Critical patent/JPS61103531A/ja
Publication of JPS61103531A publication Critical patent/JPS61103531A/ja
Publication of JPS6324411B2 publication Critical patent/JPS6324411B2/ja
Granted legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/50—Substrate holders

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
  • ing And Chemical Polishing (AREA)
  • Drying Of Semiconductors (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
JP22300884A 1984-10-25 1984-10-25 真空処理装置における基板の冷却機構 Granted JPS61103531A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP22300884A JPS61103531A (ja) 1984-10-25 1984-10-25 真空処理装置における基板の冷却機構

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP22300884A JPS61103531A (ja) 1984-10-25 1984-10-25 真空処理装置における基板の冷却機構

Publications (2)

Publication Number Publication Date
JPS61103531A true JPS61103531A (ja) 1986-05-22
JPS6324411B2 JPS6324411B2 (enrdf_load_stackoverflow) 1988-05-20

Family

ID=16791379

Family Applications (1)

Application Number Title Priority Date Filing Date
JP22300884A Granted JPS61103531A (ja) 1984-10-25 1984-10-25 真空処理装置における基板の冷却機構

Country Status (1)

Country Link
JP (1) JPS61103531A (enrdf_load_stackoverflow)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63160227A (ja) * 1986-12-23 1988-07-04 Nec Corp ドライエッチング装置
JPS63170468U (enrdf_load_stackoverflow) * 1987-04-28 1988-11-07
US5027746A (en) * 1988-03-22 1991-07-02 U.S. Philips Corporation Epitaxial reactor having a wall which is protected from deposits
US6610180B2 (en) 2000-08-01 2003-08-26 Anelva Corporation Substrate processing device and method
WO2011043063A1 (ja) * 2009-10-05 2011-04-14 キヤノンアネルバ株式会社 基板冷却装置、スパッタリング装置および電子デバイスの製造方法

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63160227A (ja) * 1986-12-23 1988-07-04 Nec Corp ドライエッチング装置
JPS63170468U (enrdf_load_stackoverflow) * 1987-04-28 1988-11-07
US5027746A (en) * 1988-03-22 1991-07-02 U.S. Philips Corporation Epitaxial reactor having a wall which is protected from deposits
US6610180B2 (en) 2000-08-01 2003-08-26 Anelva Corporation Substrate processing device and method
WO2011043063A1 (ja) * 2009-10-05 2011-04-14 キヤノンアネルバ株式会社 基板冷却装置、スパッタリング装置および電子デバイスの製造方法
GB2486156A (en) * 2009-10-05 2012-06-06 Canon Anelva Corp Substrate cooling device, sputtering device, and method for producing an electronic device
JP5462272B2 (ja) * 2009-10-05 2014-04-02 キヤノンアネルバ株式会社 基板冷却装置、スパッタリング装置および電子デバイスの製造方法

Also Published As

Publication number Publication date
JPS6324411B2 (enrdf_load_stackoverflow) 1988-05-20

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