JPS6095951A - 半導体素子のボンデイング用Ａｌ線 - Google Patents

半導体素子のボンデイング用Ａｌ線

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Publication number
JPS6095951A
JPS6095951A JP58203876A JP20387683A JPS6095951A JP S6095951 A JPS6095951 A JP S6095951A JP 58203876 A JP58203876 A JP 58203876A JP 20387683 A JP20387683 A JP 20387683A JP S6095951 A JPS6095951 A JP S6095951A
Authority
JP
Japan
Prior art keywords
wire
bonding
added
small
corrosion resistance
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP58203876A
Other languages
English (en)
Inventor
Shozo Hayashi
林　正蔵
Shinji Shirakawa
白川　信次
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tanaka Denshi Kogyo KK
Original Assignee
Tanaka Denshi Kogyo KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tanaka Denshi Kogyo KK filed Critical Tanaka Denshi Kogyo KK
Priority to JP58203876A priority Critical patent/JPS6095951A/ja
Publication of JPS6095951A publication Critical patent/JPS6095951A/ja
Pending legal-status Critical Current

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    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/43—Manufacturing methods
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/43—Manufacturing methods
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    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
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    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
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    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/4501—Shape
    • H01L2224/45012—Cross-sectional shape
    • H01L2224/45015—Cross-sectional shape being circular
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    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45117—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
    • H01L2224/45124—Aluminium (Al) as principal constituent
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Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Wire Bonding (AREA)

Abstract

(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。

Description

【発明の詳細な説明】 本発明は半導体素子のチップ電極と基板あるいはリード
フレームとの接続に使用するワイヤボンディング用のｏ
、０２〜０．５ＩＩＩＩｌφＡＲ線に関する。
一般にボンディング用線は線引き加工時およびボンディ
ング作業時における断線を防ぐために所定の引張り強度
を必要とするとともにボンディング時における高温軟化
を゛防止してボール形状の安定、ネック切れの防止、潰
れ巾の一定化及びボンディング後の接着強度（ボンディ
ング強度）を維持Ｊることを要イ′１とされ、また樹脂
モールド覆る場合のように腐食性雰囲気に線がさらされ
る場合には耐食性も重要な条イ９となる。
しかるに高純度Δｇは軟か１ぎて所定の引張り強度が得
られないために、高純度ＡＩに各種の元素を添加するこ
とににり機械的強度を改善することが考えられているが
、添加元素の種類、添加量によっては、所定の引張り強
ｌαが１’？られず、引張り強度が得られたとしても硬
づぎ（チップ割れの原因となったり、添加元素の偏析に
より引張り強度、ボンディング強度が均一化せず、品″
ｔ１にバラツキがでる結果となる。
本発明は断る事情に鑑み案出されたしので、実験結果よ
り添加元素の！ＩＩ！類とその添加φによってボンディ
ング性に優れた適正な引張り強度及びボンディング強度
を確保するとともに耐食性を改善し、しかも品質を均一
化づるボンディング用ＡＲ線を提供せんとするもので、
斯る本発明ＡＩ線は、高純度ＡＲ（９９，９％以上）に
、０．２〜１．０ｗｔ％３ｉ及び０．２〜１．５ｗｔ％
ＭＵを含有させるとともに０．０１〜０．５ｗｔ％Ｃｕ
　、０．０１〜１．Ｏｗｔ％Ａ＋１．０．００５〜０．
２ｗｔ％Ａｕからなる群より選択された少なくとも一元
素を０．０１〜ｉ、ｏｗｔ％含有せしめたことを要旨と
する。
上記ＡＲは９９．９％以上の高純度のものを用い、シリ
コン（Ｓｉ）及びマグネシウム（Ｍｏ　）は、７Ｍの引
張り強度を＾める。
銅（Ｃｕ　）　、銀（Ａｌｌ　）及び金（Ａｔｌ　）は
周期律表の銅族元素であって、その添加によってＡＩの
引張り強度を高めるとともに、耐食性の改善に有用であ
る。
上記Ｃｕ　、Ａｏ　、Ａｕはその一種又は二種以上を添
加づるが、二種以上を添加づる場合でも含有Ｗｉを０．
０１〜１．Ｏｗｔ％とする。
Ｓｌ及びＭｏが０．２ｗｔ％未満、、ＣＩ、Ａｌｌ、Ａ
ｌｌの一種又は二種以上が０．０１’ｗｔ％未満であっ
ては所定の引張り強度が得られず線引き加工が不可能で
あるとともに耐食性に劣る。
とくにＣｕ、Ａｇ、八〇が不足の場合は所定の耐食性が
得られない。
又、３ｉが１．ＯｗＬ％Ｍｌｌが１．５ｗｔ％、Ｃｕ　
、Ａｏ　、Ａｕが１．Ｑｗｔ％を越える場合は硬くなり
すぎてもろくなり、チップ割れを起したり、あるいは組
成に偏析を生じて機械的強電がバラ付いて品質の安定化
を図れない。
以下に実施例を示１．。
各試料はＡ１合金を溶解紡造し、線引き加工により直径
０．０３１１１１Ｒφの極細線ボンディングＡＲ線とし
たものである。
各試料の添加元素及びその添加量は次表（１）に示す通
りであって、その試１３１Ｎ０．１５はＣｕ　、Ａｏ　
、ＡＵの何れをも添加さｔ！すい比較量である。
尚、本発明において、残部に不可避なる不純物を含むも
のである。
表（１） （添加量単位１％） 上記各試料をもって機械的性質、及び、耐食性を測定し
た結果を表（２）に示す。
表（２） 試料Ｎ０．１１〜１４Ｉよ硬くで脆く、チップ割れを起
してボンディング強！哀の測定不ｉす。
尚、熱処理は３５０℃×３０分である。
又、耐食性は高湿、高圧、高湿１真下（１２０℃、２気
圧、湿度９０％以上、１００時間）における腐食の度合
を三ランクに区別し腐食度合いの大きいものから少ない
ものへ順にＸ、Ｑ。
◎とした。
上記表（２）から知れるように、本発明実部品の範囲（
試料Ｎ０．１〜１０）にあって、熱処理後の硬さが適正
状態（２５〜５０　Ｖ　Ｉ−Ｉ　Ｎ　）にあり、且つ引
張り強度が確保できるとともにボンディング強度が必要
強ＩＩ　（３ｏ以上）を確保され、しかも耐食性に優れ
ることが確認できた。従って本発明実部品は線引き加工
中に断線したり、ボンディング作業中に断線を起したり
することがないとともにチップ割れを防ぎ、しかも品質
を高品質安定に維持することができ、ポールボンディン
グ熱圧＠法、超音波接合法の何れに使用してもボンディ
ング特性大なる／１線を提供し得る。

Claims (1)

    【特許請求の範囲】
  1. 高純度ＡＲに、０．２〜１　、’　０ｗｔ％のシリコン
    （Ｓｌ）及び０．２〜１．５ｗｔ％のマグネシウム（Ｍ
    ｇ）を含有させるとともに０．０１〜０．５ｗｔ％の銅
    （Ｃｕ　）　、０．０１〜１．Ｏｗｔ％の銀（Ａａ　＞
    　、Ｏ，’００５〜０．２ｗｔ％の金（Ａｕ　）からな
    る群より選択された少くとも一元素を０．０１〜１．０
    ｗｔ％含有せしめた半導体素子のボンディング用Ａｌ線
    。
JP58203876A 1983-10-31 1983-10-31 半導体素子のボンデイング用Ａｌ線 Pending JPS6095951A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP58203876A JPS6095951A (ja) 1983-10-31 1983-10-31 半導体素子のボンデイング用Ａｌ線

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58203876A JPS6095951A (ja) 1983-10-31 1983-10-31 半導体素子のボンデイング用Ａｌ線

Publications (1)

Publication Number Publication Date
JPS6095951A true JPS6095951A (ja) 1985-05-29

Family

ID=16481173

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58203876A Pending JPS6095951A (ja) 1983-10-31 1983-10-31 半導体素子のボンデイング用Ａｌ線

Country Status (1)

Country Link
JP (1) JPS6095951A (ja)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2013012728A (ja) * 2011-06-03 2013-01-17 Nippon Piston Ring Co Ltd ボンディングワイヤ、接続部構造、並びに半導体装置およびその製造方法
EP3276657A1 (en) * 2016-07-27 2018-01-31 Infineon Technologies AG Cooler, power semiconductor module arrangement having a cooler, and methods for producing the same

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2013012728A (ja) * 2011-06-03 2013-01-17 Nippon Piston Ring Co Ltd ボンディングワイヤ、接続部構造、並びに半導体装置およびその製造方法
EP2530710A3 (en) * 2011-06-03 2013-10-16 Nippon Piston Ring Co., Ltd. Bonding wire, connection structure, semiconductor device and manufacturing method of same
EP3276657A1 (en) * 2016-07-27 2018-01-31 Infineon Technologies AG Cooler, power semiconductor module arrangement having a cooler, and methods for producing the same

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