JPS6095952A - 半導体素子のボンデイング用Ａｌ線 - Google Patents

半導体素子のボンデイング用Ａｌ線

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Publication number
JPS6095952A
JPS6095952A JP58203877A JP20387783A JPS6095952A JP S6095952 A JPS6095952 A JP S6095952A JP 58203877 A JP58203877 A JP 58203877A JP 20387783 A JP20387783 A JP 20387783A JP S6095952 A JPS6095952 A JP S6095952A
Authority
JP
Japan
Prior art keywords
wire
bonding
added
small
tensile strength
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP58203877A
Other languages
English (en)
Inventor
Shozo Hayashi
林　正蔵
Shinji Shirakawa
白川　信次
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tanaka Denshi Kogyo KK
Original Assignee
Tanaka Denshi Kogyo KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tanaka Denshi Kogyo KK filed Critical Tanaka Denshi Kogyo KK
Priority to JP58203877A priority Critical patent/JPS6095952A/ja
Publication of JPS6095952A publication Critical patent/JPS6095952A/ja
Pending legal-status Critical Current

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    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/43—Manufacturing methods
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/43—Manufacturing methods
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    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/43—Manufacturing methods
    • H01L2224/432—Mechanical processes
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    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H—ELECTRICITY
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/4501—Shape
    • H01L2224/45012—Cross-sectional shape
    • H01L2224/45015—Cross-sectional shape being circular
    • H—ELECTRICITY
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    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45117—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
    • H01L2224/45124—Aluminium (Al) as principal constituent
    • H—ELECTRICITY
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    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/00011—Not relevant to the scope of the group, the symbol of which is combined with the symbol of this group
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    • H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
    • H—ELECTRICITY
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    • H01L2924/01—Chemical elements
    • H01L2924/01006—Carbon [C]
    • H—ELECTRICITY
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    • H01L2924/01—Chemical elements
    • H01L2924/01012—Magnesium [Mg]
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    • H—ELECTRICITY
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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    • H01L2924/20—Parameters
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    • H01—ELECTRIC ELEMENTS
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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    • H01L2924/2076—Diameter ranges equal to or larger than 100 microns

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Wire Bonding (AREA)

Abstract

(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。

Description

【発明の詳細な説明】 本発明は半導体素子のチップ電極と基板あるいはリード
フレームとの接続に使用づるワイＡ７ボンデイング用の
０．０２〜Ｑ、５ｍｍφＡλ線に関する。
一般にボンディング用線は線引き加工時およびボンディ
ング作業時における断線を防ぐために所定の引張り強度
を必要とするとともにボンディング時にお【ノる高温軟
化を防１１ニしてボール形状の安定、ネック切れの防止
、潰れＩＩＩの一定化及びボンディング後のＪｆ［強１
良くボンディング引１を維持することを要件とされ、ま
た樹脂モールドＪる場合のように腐食性雰囲気に線がさ
らされる場合には耐食性も重要な条ｆ［となる。
しかるに１１度Ａ、ｔは軟か１ぎて所定の引張り強度が
得られないために、高純度／ｌに各種の元素を添加りる
ことにより機械的強電を改善づることが考えられている
が、添加元素の種類、添加量によっては、所定の引張り
強度が得られず、引張り強度が得られたとしても硬１ぎ
てチップ割れの原因となったり、添加元素の偏析により
引張り強度、ボンディング強度が均一化Ｕず、品質にバ
ラツキがでる結果となる。
本発明は断る事情に鑑み案出されたもので、実験結果よ
り添加元素の種類どその添加量によってボンディング性
に優れた適正な引張り強度及びボンディング強度を確保
するとともに耐食性を改善し、しかも品質を均一化する
ボンディング用ＡＲ線を提供せんとするもので、斯る本
発明へχ線は、高純度ＡＲ（９９，９％以上）に、０．
２〜１．Ｑｗｔ％３ｉ及び０．２〜１．５ｗｔ％Ｍ（＋
を含有させるとともに０．００１〜０．３ｗｔ％Ｆｅ１
０．００１〜Ｑ、３ＷＬ％Ｎｉ　、０．００１〜０．３
ｗｔ％ＣＯからなる群より選択された少なくとも一元素
を０．００１〜０，３ｗｔ％含有せしめたことを要旨と
する。
上記Ａχは９９．９％以上の高純度のものを用い、シリ
コン（Ｓｉ　）及びマグネシウム（Ｍｇ）はＡＲの引張
り強度を高める。
鉄（Ｆｅ）、ニッケル（Ｎｉ）及びコバルト（ＣＯ）は
周期律表の鉄族元素であって、その添加によってＡχの
引張り強度を高めるとともに、耐食性の改善に有用であ
る。
上記Ｆｅ　、Ｎｉ　５Ｃｏｏはその一種又は二種以上を
添加するが、二種以上を添加する場合でも含有量を０．
００１〜Ｑ、３ｗｔ％とする。
Ｓ；及びＭＯが０，２ｗｔ％未満、Ｆｅ　、Ｎｉ、ＣＯ
の一種又は二種以上がＯ，ＯＱ１ｗｔ％未満であっては
所定の引張り強度が得られず線引き加工が不可能である
とともに耐食性に劣る。
とくにＦｅ　１Ｎｉ　５ＣｔＯが不足の場合は所定の耐
食性が得られない。
又、３ｉが１．□ｗｔ％、Ｍ（ｌが１，５ｗｔ％、１”
ｅＳＮｉ、ＧｏがＱ、３ｗｔ％を越える場合は硬くなり
すぎてもろくなり、チップ割れを起したり、あるいは組
成に偏析を生じて機械的強度がバラ付いて品質の安定化
を図れない。
以下に実施例を示す。
各試料はへχ合金を溶解鋳造し、線引き加工により直径
０．０３１１１１１１φの極ｌｌｌ１線ボンディングＡ
Ｒ線としたものである。
各試料の添加元素及びその添加量は次表（１）に示す通
りであって、その試料Ｎ０．１５は１”ｅ％ＮｔＳｃｏ
の何れをも添加させない比較量である。
尚、本発明において、残部に不可避なる不純物を含むも
のである。
表（１） 上記各試料をもって機械的性質、及び、耐食性を測定し
た結果を表（２）に示１゜ 表（２） の試料であってもボンディング強度にバラツキがみられ
た。
尚、熱処理は３５０℃Ｘ３０分である。
又、耐食性は高温、高圧、高湿度下（１２０℃、２気圧
、湿度９０％以上、１００時間）における腐食の度合を
三ランクに区別し腐食度合いの大きいものから少ないも
のへ順にｘ、Ｑ、Ｏとした。
上記表（２）から知れるように、本発明実施品の範囲（
試料Ｎｏ、１〜１０）にあって、熱処理後の硬さが適正
状態（２５〜５０　Ｖ　１１Ｎ　＞にあり、且つ引張り
強度が確保できるとともにボンディング強度が必要強Ｉ
ｍ（３（１以上）を確保され、しかも耐食性に優れるこ
とが確認できた。従って本発明実施品は線引き加工中に
断線したり、ボンディング作業中に断線を起したりする
ことがないとともにチップ割れを防ぎ、しかも品質を高
品質安定に維持りることができ、ポールボンディング熱
ｌ］：ｒＪｌ′Ａ、超音波接合法の伺れに使用してもボ
ンディング特竹人なるＡ、２線を提供し得る。

Claims (1)

    【特許請求の範囲】
  1. 高純度Ａｘに、０．２〜１．０ｗｔ％（７）シＩＪ＝＋
    ン（Ｓｉ）及び０．２〜１．５ｗｔ％のマグネシウム（
    ＭＯ）を含有させるとともに０．００１〜０．３ｗｔ％
    のｌ　（Ｆｅ　）、０．００１〜Ｑ、３ｗｔ％のニッケ
    ル（Ｎ＋　）、０．００１〜０１３ｗｔ％のコバルト（
    Ｇｏ　）からなる群より選択された少くとも一元素を０
    ．００１〜０．３ｗｔ％含有せ°しめた半導体素子のボ
    ンディング用Ａχ線、
JP58203877A 1983-10-31 1983-10-31 半導体素子のボンデイング用Ａｌ線 Pending JPS6095952A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP58203877A JPS6095952A (ja) 1983-10-31 1983-10-31 半導体素子のボンデイング用Ａｌ線

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58203877A JPS6095952A (ja) 1983-10-31 1983-10-31 半導体素子のボンデイング用Ａｌ線

Publications (1)

Publication Number Publication Date
JPS6095952A true JPS6095952A (ja) 1985-05-29

Family

ID=16481190

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58203877A Pending JPS6095952A (ja) 1983-10-31 1983-10-31 半導体素子のボンデイング用Ａｌ線

Country Status (1)

Country Link
JP (1) JPS6095952A (ja)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2013012728A (ja) * 2011-06-03 2013-01-17 Nippon Piston Ring Co Ltd ボンディングワイヤ、接続部構造、並びに半導体装置およびその製造方法
EP3276657A1 (en) * 2016-07-27 2018-01-31 Infineon Technologies AG Cooler, power semiconductor module arrangement having a cooler, and methods for producing the same

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2013012728A (ja) * 2011-06-03 2013-01-17 Nippon Piston Ring Co Ltd ボンディングワイヤ、接続部構造、並びに半導体装置およびその製造方法
EP2530710A3 (en) * 2011-06-03 2013-10-16 Nippon Piston Ring Co., Ltd. Bonding wire, connection structure, semiconductor device and manufacturing method of same
EP3276657A1 (en) * 2016-07-27 2018-01-31 Infineon Technologies AG Cooler, power semiconductor module arrangement having a cooler, and methods for producing the same

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