JPS609160A - 半導体装置およびその製造方法 - Google Patents

半導体装置およびその製造方法

Info

Publication number
JPS609160A
JPS609160A JP58117607A JP11760783A JPS609160A JP S609160 A JPS609160 A JP S609160A JP 58117607 A JP58117607 A JP 58117607A JP 11760783 A JP11760783 A JP 11760783A JP S609160 A JPS609160 A JP S609160A
Authority
JP
Japan
Prior art keywords
film
metal silicide
polycrystalline silicon
gate
metal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP58117607A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0329189B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html
Inventor
Masanori Fukumoto
正紀 福本
Shohei Shinohara
篠原　昭平
Shozo Okada
岡田　昌三
Juro Yasui
安井　十郎
Koichi Kugimiya
公一 釘宮
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP58117607A priority Critical patent/JPS609160A/ja
Publication of JPS609160A publication Critical patent/JPS609160A/ja
Publication of JPH0329189B2 publication Critical patent/JPH0329189B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/62—Electrodes ohmically coupled to a semiconductor

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
JP58117607A 1983-06-28 1983-06-28 半導体装置およびその製造方法 Granted JPS609160A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP58117607A JPS609160A (ja) 1983-06-28 1983-06-28 半導体装置およびその製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58117607A JPS609160A (ja) 1983-06-28 1983-06-28 半導体装置およびその製造方法

Publications (2)

Publication Number Publication Date
JPS609160A true JPS609160A (ja) 1985-01-18
JPH0329189B2 JPH0329189B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1991-04-23

Family

ID=14715952

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58117607A Granted JPS609160A (ja) 1983-06-28 1983-06-28 半導体装置およびその製造方法

Country Status (1)

Country Link
JP (1) JPS609160A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62188159U (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) * 1986-05-21 1987-11-30
JPS6347950A (ja) * 1986-08-18 1988-02-29 Mitsubishi Electric Corp 半導体装置
JPH03269149A (ja) * 1990-03-13 1991-11-29 Kishi Seisakusho:Kk 帯状シートの熱溶着装置
JPH06334118A (ja) * 1993-05-19 1994-12-02 Nec Corp 半導体装置及びその製造方法
US6496416B1 (en) * 2000-12-19 2002-12-17 Xilinx, Inc. Low voltage non-volatile memory cell
US6882571B1 (en) 2000-12-19 2005-04-19 Xilinx, Inc. Low voltage non-volatile memory cell
US6930920B1 (en) 2002-10-29 2005-08-16 Xilinx, Inc. Low voltage non-volatile memory cell

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS48105467U (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) * 1972-03-15 1973-12-07
JPS5354978A (en) * 1976-10-29 1978-05-18 Toshiba Corp Insulated gate type field effect element
JPS5413283A (en) * 1977-06-30 1979-01-31 Ibm Method of forming metal silicide layer on substrate

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS48105467U (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) * 1972-03-15 1973-12-07
JPS5354978A (en) * 1976-10-29 1978-05-18 Toshiba Corp Insulated gate type field effect element
JPS5413283A (en) * 1977-06-30 1979-01-31 Ibm Method of forming metal silicide layer on substrate

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62188159U (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) * 1986-05-21 1987-11-30
JPS6347950A (ja) * 1986-08-18 1988-02-29 Mitsubishi Electric Corp 半導体装置
JPH03269149A (ja) * 1990-03-13 1991-11-29 Kishi Seisakusho:Kk 帯状シートの熱溶着装置
JPH06334118A (ja) * 1993-05-19 1994-12-02 Nec Corp 半導体装置及びその製造方法
US6496416B1 (en) * 2000-12-19 2002-12-17 Xilinx, Inc. Low voltage non-volatile memory cell
US6671205B2 (en) 2000-12-19 2003-12-30 Xilinx, Inc. Low voltage non-volatile memory cell
US6882571B1 (en) 2000-12-19 2005-04-19 Xilinx, Inc. Low voltage non-volatile memory cell
US6936527B1 (en) 2000-12-19 2005-08-30 Xilinx, Inc. Low voltage non-volatile memory cell
US6930920B1 (en) 2002-10-29 2005-08-16 Xilinx, Inc. Low voltage non-volatile memory cell

Also Published As

Publication number Publication date
JPH0329189B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1991-04-23

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