JPS6089990A - 光集積回路 - Google Patents

光集積回路

Info

Publication number
JPS6089990A
JPS6089990A JP58197210A JP19721083A JPS6089990A JP S6089990 A JPS6089990 A JP S6089990A JP 58197210 A JP58197210 A JP 58197210A JP 19721083 A JP19721083 A JP 19721083A JP S6089990 A JPS6089990 A JP S6089990A
Authority
JP
Japan
Prior art keywords
layer
integrated circuit
optical integrated
semiconductor laser
monolithic optical
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP58197210A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0426233B2 (enrdf_load_stackoverflow
Inventor
Haruji Matsuoka
松岡　春治
Hiroshi Okuda
奥田　寛
Kenji Okamoto
賢司 岡本
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sumitomo Electric Industries Ltd
Original Assignee
Sumitomo Electric Industries Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sumitomo Electric Industries Ltd filed Critical Sumitomo Electric Industries Ltd
Priority to JP58197210A priority Critical patent/JPS6089990A/ja
Publication of JPS6089990A publication Critical patent/JPS6089990A/ja
Publication of JPH0426233B2 publication Critical patent/JPH0426233B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04B—TRANSMISSION
    • H04B10/00—Transmission systems employing electromagnetic waves other than radio-waves, e.g. infrared, visible or ultraviolet light, or employing corpuscular radiation, e.g. quantum communication
    • H04B10/50—Transmitters
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/1028—Coupling to elements in the cavity, e.g. coupling to waveguides adjacent the active region, e.g. forward coupled [DFC] structures
    • H01S5/1032—Coupling to elements comprising an optical axis that is not aligned with the optical axis of the active region
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
    • H01S5/4031—Edge-emitting structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/026—Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/026—Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers
    • H01S5/0262—Photo-diodes, e.g. transceiver devices, bidirectional devices
    • H01S5/0264—Photo-diodes, e.g. transceiver devices, bidirectional devices for monitoring the laser-output
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/068—Stabilisation of laser output parameters
    • H01S5/06825—Protecting the laser, e.g. during switch-on/off, detection of malfunctioning or degradation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30

Landscapes

  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Networks & Wireless Communication (AREA)
  • Signal Processing (AREA)
  • Semiconductor Lasers (AREA)
  • Optical Integrated Circuits (AREA)
JP58197210A 1983-10-21 1983-10-21 光集積回路 Granted JPS6089990A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP58197210A JPS6089990A (ja) 1983-10-21 1983-10-21 光集積回路

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58197210A JPS6089990A (ja) 1983-10-21 1983-10-21 光集積回路

Publications (2)

Publication Number Publication Date
JPS6089990A true JPS6089990A (ja) 1985-05-20
JPH0426233B2 JPH0426233B2 (enrdf_load_stackoverflow) 1992-05-06

Family

ID=16370652

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58197210A Granted JPS6089990A (ja) 1983-10-21 1983-10-21 光集積回路

Country Status (1)

Country Link
JP (1) JPS6089990A (enrdf_load_stackoverflow)

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3701655A1 (de) * 1986-01-21 1987-07-23 Sharp Kk Halbleiterlaseranordnung
JPS63222485A (ja) * 1987-03-12 1988-09-16 Kokusai Denshin Denwa Co Ltd <Kdd> モニタ付分布帰還形半導体レ−ザ
JPH05343809A (ja) * 1992-06-08 1993-12-24 Sumitomo Electric Ind Ltd 半導体レーザ装置システム
EP0560358A3 (en) * 1992-03-11 1994-05-18 Sumitomo Electric Industries Semiconductor laser and process for fabricating the same
JP2000049417A (ja) * 1998-07-29 2000-02-18 Hitachi Ltd 半導体発光素子およびその素子を組み込んだ半導体発光装置ならびにそれらの製造方法
EP1886389A4 (en) * 2005-05-30 2011-03-30 Phoxtal Comm Ab INTEGRATED CHIP
US8467427B2 (en) 2009-01-29 2013-06-18 Seiko Epson Corporation Light emitting and receiving device

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS53138688A (en) * 1977-05-06 1978-12-04 Western Electric Co Photo ic
JPS54129904A (en) * 1978-03-31 1979-10-08 Fujitsu Ltd Doubling system of light source
JPS5717188A (en) * 1980-07-04 1982-01-28 Fujitsu Ltd Semiconductor light-emitting element
JPS5728382A (en) * 1980-07-28 1982-02-16 Toshiba Corp Semiconductor lasre device

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS53138688A (en) * 1977-05-06 1978-12-04 Western Electric Co Photo ic
JPS54129904A (en) * 1978-03-31 1979-10-08 Fujitsu Ltd Doubling system of light source
JPS5717188A (en) * 1980-07-04 1982-01-28 Fujitsu Ltd Semiconductor light-emitting element
JPS5728382A (en) * 1980-07-28 1982-02-16 Toshiba Corp Semiconductor lasre device

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3701655A1 (de) * 1986-01-21 1987-07-23 Sharp Kk Halbleiterlaseranordnung
US4813051A (en) * 1986-01-21 1989-03-14 501 Sharp Kabushiki Kaisha Semiconductor laser array device
JPS63222485A (ja) * 1987-03-12 1988-09-16 Kokusai Denshin Denwa Co Ltd <Kdd> モニタ付分布帰還形半導体レ−ザ
EP0560358A3 (en) * 1992-03-11 1994-05-18 Sumitomo Electric Industries Semiconductor laser and process for fabricating the same
JPH05343809A (ja) * 1992-06-08 1993-12-24 Sumitomo Electric Ind Ltd 半導体レーザ装置システム
JP2000049417A (ja) * 1998-07-29 2000-02-18 Hitachi Ltd 半導体発光素子およびその素子を組み込んだ半導体発光装置ならびにそれらの製造方法
EP1886389A4 (en) * 2005-05-30 2011-03-30 Phoxtal Comm Ab INTEGRATED CHIP
US8467427B2 (en) 2009-01-29 2013-06-18 Seiko Epson Corporation Light emitting and receiving device

Also Published As

Publication number Publication date
JPH0426233B2 (enrdf_load_stackoverflow) 1992-05-06

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