JPS5728382A - Semiconductor lasre device - Google Patents

Semiconductor lasre device

Info

Publication number
JPS5728382A
JPS5728382A JP10243780A JP10243780A JPS5728382A JP S5728382 A JPS5728382 A JP S5728382A JP 10243780 A JP10243780 A JP 10243780A JP 10243780 A JP10243780 A JP 10243780A JP S5728382 A JPS5728382 A JP S5728382A
Authority
JP
Japan
Prior art keywords
optical waveguide
lasre
lasres
substrate
passage
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP10243780A
Other languages
Japanese (ja)
Inventor
Shuhei Katagiri
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP10243780A priority Critical patent/JPS5728382A/en
Publication of JPS5728382A publication Critical patent/JPS5728382A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/026—Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers

Abstract

PURPOSE:To equalize each modulation bias current by making the length of respective optical waveguide passage equal while inclining each lasre to the end surfaces of one substrate or more when a plurality of the semiconductor lasres are mounted onto one substrate or more, and lasre rays emitted from the lasres are collected to one main optical waveguide passage through a plurality of the optical waveguide passages and diffraction gratings. CONSTITUTION:A plurality of distribution feedback type semiconductor lasres 121 125..., which are inclined at a fixed angle to an end surface 111 of one substrate 11 and are parallel, are shaped onto the substrate 11, and the lasre rays emitted from the lasres are projected to the diffraction gratings 141-145... through the first optical waveguide passages 131-135.... Output from the gratings is passed through the second optical waveguide passages 151-155... and one part is passed through another optical waveguide passage 16, and the output is finally collected to the one main optical waveguide passage 17, and projected in the arrow 18 direction from an extracting port 17. In this constitution, the length of respective optical waveguide passage is made equal approximately, each modulation bias current is equalized and the distribution of temperature is made constant.
JP10243780A 1980-07-28 1980-07-28 Semiconductor lasre device Pending JPS5728382A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP10243780A JPS5728382A (en) 1980-07-28 1980-07-28 Semiconductor lasre device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10243780A JPS5728382A (en) 1980-07-28 1980-07-28 Semiconductor lasre device

Publications (1)

Publication Number Publication Date
JPS5728382A true JPS5728382A (en) 1982-02-16

Family

ID=14327433

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10243780A Pending JPS5728382A (en) 1980-07-28 1980-07-28 Semiconductor lasre device

Country Status (1)

Country Link
JP (1) JPS5728382A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6089990A (en) * 1983-10-21 1985-05-20 Sumitomo Electric Ind Ltd Optical integrated circuit
US4744088A (en) * 1986-03-20 1988-05-10 Siemens Aktiengesellschaft Semiconductor laser array with focused emission
JPS63257290A (en) * 1987-03-30 1988-10-25 シーメンス、アクチエンゲゼルシヤフト Integrated optical device for bidirectional optical communication or signal transmission

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6089990A (en) * 1983-10-21 1985-05-20 Sumitomo Electric Ind Ltd Optical integrated circuit
JPH0426233B2 (en) * 1983-10-21 1992-05-06 Sumitomo Electric Industries
US4744088A (en) * 1986-03-20 1988-05-10 Siemens Aktiengesellschaft Semiconductor laser array with focused emission
JPS63257290A (en) * 1987-03-30 1988-10-25 シーメンス、アクチエンゲゼルシヤフト Integrated optical device for bidirectional optical communication or signal transmission

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