JPH0426233B2 - - Google Patents

Info

Publication number
JPH0426233B2
JPH0426233B2 JP58197210A JP19721083A JPH0426233B2 JP H0426233 B2 JPH0426233 B2 JP H0426233B2 JP 58197210 A JP58197210 A JP 58197210A JP 19721083 A JP19721083 A JP 19721083A JP H0426233 B2 JPH0426233 B2 JP H0426233B2
Authority
JP
Japan
Prior art keywords
semiconductor laser
layer
integrated circuit
substrate
optical integrated
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP58197210A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6089990A (ja
Inventor
Haruji Matsuoka
Hiroshi Okuda
Kenji Okamoto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sumitomo Electric Industries Ltd
Original Assignee
Sumitomo Electric Industries Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sumitomo Electric Industries Ltd filed Critical Sumitomo Electric Industries Ltd
Priority to JP58197210A priority Critical patent/JPS6089990A/ja
Publication of JPS6089990A publication Critical patent/JPS6089990A/ja
Publication of JPH0426233B2 publication Critical patent/JPH0426233B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04B—TRANSMISSION
    • H04B10/00—Transmission systems employing electromagnetic waves other than radio-waves, e.g. infrared, visible or ultraviolet light, or employing corpuscular radiation, e.g. quantum communication
    • H04B10/50—Transmitters
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/1028—Coupling to elements in the cavity, e.g. coupling to waveguides adjacent the active region, e.g. forward coupled [DFC] structures
    • H01S5/1032—Coupling to elements comprising an optical axis that is not aligned with the optical axis of the active region
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
    • H01S5/4031—Edge-emitting structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/026—Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/026—Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers
    • H01S5/0262—Photo-diodes, e.g. transceiver devices, bidirectional devices
    • H01S5/0264—Photo-diodes, e.g. transceiver devices, bidirectional devices for monitoring the laser-output
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/068—Stabilisation of laser output parameters
    • H01S5/06825—Protecting the laser, e.g. during switch-on/off, detection of malfunctioning or degradation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30

Landscapes

  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Networks & Wireless Communication (AREA)
  • Signal Processing (AREA)
  • Semiconductor Lasers (AREA)
  • Optical Integrated Circuits (AREA)
JP58197210A 1983-10-21 1983-10-21 光集積回路 Granted JPS6089990A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP58197210A JPS6089990A (ja) 1983-10-21 1983-10-21 光集積回路

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58197210A JPS6089990A (ja) 1983-10-21 1983-10-21 光集積回路

Publications (2)

Publication Number Publication Date
JPS6089990A JPS6089990A (ja) 1985-05-20
JPH0426233B2 true JPH0426233B2 (enrdf_load_stackoverflow) 1992-05-06

Family

ID=16370652

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58197210A Granted JPS6089990A (ja) 1983-10-21 1983-10-21 光集積回路

Country Status (1)

Country Link
JP (1) JPS6089990A (enrdf_load_stackoverflow)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62169389A (ja) * 1986-01-21 1987-07-25 Sharp Corp 半導体レ−ザアレイ装置
JPS63222485A (ja) * 1987-03-12 1988-09-16 Kokusai Denshin Denwa Co Ltd <Kdd> モニタ付分布帰還形半導体レ−ザ
JPH05343809A (ja) * 1992-06-08 1993-12-24 Sumitomo Electric Ind Ltd 半導体レーザ装置システム
CA2091302A1 (en) * 1992-03-11 1993-09-12 Ichiro Yoshida Semiconductor laser and process for fabricating the same
JP3595167B2 (ja) * 1998-07-29 2004-12-02 日本オプネクスト株式会社 半導体発光素子およびその素子を組み込んだ半導体発光装置ならびにそれらの製造方法
SE528653C2 (sv) * 2005-05-30 2007-01-09 Phoxtal Comm Ab Integrerat chip
JP5257604B2 (ja) 2009-01-29 2013-08-07 セイコーエプソン株式会社 発光装置

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4136928A (en) * 1977-05-06 1979-01-30 Bell Telephone Laboratories, Incorporated Optical integrated circuit including junction laser with oblique mirror
JPS54129904A (en) * 1978-03-31 1979-10-08 Fujitsu Ltd Doubling system of light source
JPS5717188A (en) * 1980-07-04 1982-01-28 Fujitsu Ltd Semiconductor light-emitting element
JPS5728382A (en) * 1980-07-28 1982-02-16 Toshiba Corp Semiconductor lasre device

Also Published As

Publication number Publication date
JPS6089990A (ja) 1985-05-20

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