JPS6074429A - プラズマ処理装置 - Google Patents

プラズマ処理装置

Info

Publication number
JPS6074429A
JPS6074429A JP18189583A JP18189583A JPS6074429A JP S6074429 A JPS6074429 A JP S6074429A JP 18189583 A JP18189583 A JP 18189583A JP 18189583 A JP18189583 A JP 18189583A JP S6074429 A JPS6074429 A JP S6074429A
Authority
JP
Japan
Prior art keywords
gas
tube
reaction
substrate
reaction gas
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP18189583A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0515059B2 (enExample
Inventor
Hideo Ishii
石井　英夫
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP18189583A priority Critical patent/JPS6074429A/ja
Publication of JPS6074429A publication Critical patent/JPS6074429A/ja
Publication of JPH0515059B2 publication Critical patent/JPH0515059B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02532—Silicon, silicon germanium, germanium

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Drying Of Semiconductors (AREA)
JP18189583A 1983-09-29 1983-09-29 プラズマ処理装置 Granted JPS6074429A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP18189583A JPS6074429A (ja) 1983-09-29 1983-09-29 プラズマ処理装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP18189583A JPS6074429A (ja) 1983-09-29 1983-09-29 プラズマ処理装置

Publications (2)

Publication Number Publication Date
JPS6074429A true JPS6074429A (ja) 1985-04-26
JPH0515059B2 JPH0515059B2 (enExample) 1993-02-26

Family

ID=16108759

Family Applications (1)

Application Number Title Priority Date Filing Date
JP18189583A Granted JPS6074429A (ja) 1983-09-29 1983-09-29 プラズマ処理装置

Country Status (1)

Country Link
JP (1) JPS6074429A (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2017510716A (ja) * 2014-03-07 2017-04-13 マイヤー・ブルガー・（ジャーマニー）・アクチエンゲゼルシャフト 複数のプラズマにおいてプロセスガスの循環によりプラズマ処理を行うための装置

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5710937A (en) * 1980-06-25 1982-01-20 Mitsubishi Electric Corp Plasma gaseous phase growth device

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5710937A (en) * 1980-06-25 1982-01-20 Mitsubishi Electric Corp Plasma gaseous phase growth device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2017510716A (ja) * 2014-03-07 2017-04-13 マイヤー・ブルガー・（ジャーマニー）・アクチエンゲゼルシャフト 複数のプラズマにおいてプロセスガスの循環によりプラズマ処理を行うための装置

Also Published As

Publication number Publication date
JPH0515059B2 (enExample) 1993-02-26

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