JPS6032383A - 周期構造体の製造方法 - Google Patents
周期構造体の製造方法Info
- Publication number
- JPS6032383A JPS6032383A JP58141557A JP14155783A JPS6032383A JP S6032383 A JPS6032383 A JP S6032383A JP 58141557 A JP58141557 A JP 58141557A JP 14155783 A JP14155783 A JP 14155783A JP S6032383 A JPS6032383 A JP S6032383A
- Authority
- JP
- Japan
- Prior art keywords
- etching
- film
- periodic
- substrate
- recess
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 230000000737 periodic effect Effects 0.000 title claims abstract description 62
- 238000004519 manufacturing process Methods 0.000 title claims description 17
- 238000005530 etching Methods 0.000 claims abstract description 77
- 239000000758 substrate Substances 0.000 claims abstract description 26
- 239000011248 coating agent Substances 0.000 claims description 14
- 238000000576 coating method Methods 0.000 claims description 14
- 238000000034 method Methods 0.000 claims description 13
- 238000001312 dry etching Methods 0.000 claims description 8
- 239000013078 crystal Substances 0.000 claims description 7
- 229920002120 photoresistant polymer Polymers 0.000 claims description 4
- 230000003287 optical effect Effects 0.000 abstract description 6
- 230000000873 masking effect Effects 0.000 abstract 2
- 238000005253 cladding Methods 0.000 description 9
- 238000010586 diagram Methods 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 239000000243 solution Substances 0.000 description 3
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 2
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 229910017604 nitric acid Inorganic materials 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- UBQYURCVBFRUQT-UHFFFAOYSA-N N-benzoyl-Ferrioxamine B Chemical compound CC(=O)N(O)CCCCCNC(=O)CCC(=O)N(O)CCCCCNC(=O)CCC(=O)N(O)CCCCCN UBQYURCVBFRUQT-UHFFFAOYSA-N 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 1
- 238000000149 argon plasma sintering Methods 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 239000011259 mixed solution Substances 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/308—Chemical or electrical treatment, e.g. electrolytic etching using masks
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Drying Of Semiconductors (AREA)
- Semiconductor Lasers (AREA)
- Photosensitive Polymer And Photoresist Processing (AREA)
- Diffracting Gratings Or Hologram Optical Elements (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58141557A JPS6032383A (ja) | 1983-08-02 | 1983-08-02 | 周期構造体の製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58141557A JPS6032383A (ja) | 1983-08-02 | 1983-08-02 | 周期構造体の製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6032383A true JPS6032383A (ja) | 1985-02-19 |
| JPH0418717B2 JPH0418717B2 (enrdf_load_stackoverflow) | 1992-03-27 |
Family
ID=15294736
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP58141557A Granted JPS6032383A (ja) | 1983-08-02 | 1983-08-02 | 周期構造体の製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6032383A (enrdf_load_stackoverflow) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2014132586A1 (ja) * | 2013-02-28 | 2014-09-04 | 富士フイルム株式会社 | 微細凹凸構造体の製造方法およびその方法により製造される微細凹凸構造体 |
-
1983
- 1983-08-02 JP JP58141557A patent/JPS6032383A/ja active Granted
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2014132586A1 (ja) * | 2013-02-28 | 2014-09-04 | 富士フイルム株式会社 | 微細凹凸構造体の製造方法およびその方法により製造される微細凹凸構造体 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0418717B2 (enrdf_load_stackoverflow) | 1992-03-27 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JPS6032383A (ja) | 周期構造体の製造方法 | |
| JPH0669605A (ja) | 回折格子の形成方法 | |
| JPH0653600A (ja) | 半導体発光素子の回折格子の形成方法 | |
| JPS6033505A (ja) | 回折格子の製造方法 | |
| JP2527833B2 (ja) | 回折格子の製造方法 | |
| JPS61242027A (ja) | 結晶基板の表面に特定格子定数の表面格子を成形する方法 | |
| JPS60216304A (ja) | 回折格子の製造方法 | |
| KR100464353B1 (ko) | 레이저다이오드의 회절격자 제조방법 | |
| JPS61242026A (ja) | 特定格子定数の表面格子の製造方法 | |
| JPS6081829A (ja) | 半導体のエツチング方法 | |
| JPH0670954B2 (ja) | 半導体装置の製造方法 | |
| JPS6370477A (ja) | 位相シフト型回折格子の製造方法 | |
| JPS61189503A (ja) | 回折格子の製造方法 | |
| JP2786229B2 (ja) | 回折格子の製造方法 | |
| JPS62205354A (ja) | リソグラフイ方法 | |
| JPH01225189A (ja) | 回折格子の製造方法 | |
| JPH09184909A (ja) | 領域を限定した回折格子の作製方法 | |
| JPS62139503A (ja) | 回折格子の製造方法 | |
| JPH0283990A (ja) | 半導体発光装置の製造方法 | |
| JPS62165392A (ja) | 回折格子の製造方法 | |
| JPS61292924A (ja) | レジストパタ−ンの形成方法 | |
| JPH09260775A (ja) | 光半導体装置の製造方法，及び光半導体装置 | |
| JPS6381885A (ja) | 位相シフト型回折格子の製造方法 | |
| JPS61174635A (ja) | 半導体装置の製造方法 | |
| JPS60100433A (ja) | 半導体のエツチング方法 |