JPH0418717B2 - - Google Patents

Info

Publication number
JPH0418717B2
JPH0418717B2 JP58141557A JP14155783A JPH0418717B2 JP H0418717 B2 JPH0418717 B2 JP H0418717B2 JP 58141557 A JP58141557 A JP 58141557A JP 14155783 A JP14155783 A JP 14155783A JP H0418717 B2 JPH0418717 B2 JP H0418717B2
Authority
JP
Japan
Prior art keywords
etching
recess
etching mask
film
periodic
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP58141557A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6032383A (ja
Inventor
Tomoaki Uno
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP58141557A priority Critical patent/JPS6032383A/ja
Publication of JPS6032383A publication Critical patent/JPS6032383A/ja
Publication of JPH0418717B2 publication Critical patent/JPH0418717B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/308—Chemical or electrical treatment, e.g. electrolytic etching using masks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Drying Of Semiconductors (AREA)
  • Semiconductor Lasers (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Diffracting Gratings Or Hologram Optical Elements (AREA)
JP58141557A 1983-08-02 1983-08-02 周期構造体の製造方法 Granted JPS6032383A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP58141557A JPS6032383A (ja) 1983-08-02 1983-08-02 周期構造体の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58141557A JPS6032383A (ja) 1983-08-02 1983-08-02 周期構造体の製造方法

Publications (2)

Publication Number Publication Date
JPS6032383A JPS6032383A (ja) 1985-02-19
JPH0418717B2 true JPH0418717B2 (enrdf_load_stackoverflow) 1992-03-27

Family

ID=15294736

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58141557A Granted JPS6032383A (ja) 1983-08-02 1983-08-02 周期構造体の製造方法

Country Status (1)

Country Link
JP (1) JPS6032383A (enrdf_load_stackoverflow)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2014164281A (ja) * 2013-02-28 2014-09-08 Fujifilm Corp 微細凹凸構造体の製造方法およびその方法により製造される微細凹凸構造体

Also Published As

Publication number Publication date
JPS6032383A (ja) 1985-02-19

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