JPS6028273A - 半導体装置 - Google Patents

半導体装置

Info

Publication number
JPS6028273A
JPS6028273A JP58136128A JP13612883A JPS6028273A JP S6028273 A JPS6028273 A JP S6028273A JP 58136128 A JP58136128 A JP 58136128A JP 13612883 A JP13612883 A JP 13612883A JP S6028273 A JPS6028273 A JP S6028273A
Authority
JP
Japan
Prior art keywords
layer
electron
semiconductor layer
gaas
impurities
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP58136128A
Other languages
English (en)
Japanese (ja)
Other versions
JPS639388B2 (enrdf_load_stackoverflow
Inventor
Toshio Baba
寿夫 馬場
Takashi Mizutani
隆 水谷
Masaki Ogawa
正毅 小川
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP58136128A priority Critical patent/JPS6028273A/ja
Priority to DE8484304300T priority patent/DE3480631D1/de
Priority to US06/624,333 priority patent/US4695857A/en
Priority to EP84304300A priority patent/EP0133342B1/en
Publication of JPS6028273A publication Critical patent/JPS6028273A/ja
Priority to US07/043,046 priority patent/US4792832A/en
Publication of JPS639388B2 publication Critical patent/JPS639388B2/ja
Granted legal-status Critical Current

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/81—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials of structures exhibiting quantum-confinement effects, e.g. single quantum wells; of structures having periodic or quasi-periodic potential variation
    • H10D62/815—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials of structures exhibiting quantum-confinement effects, e.g. single quantum wells; of structures having periodic or quasi-periodic potential variation of structures having periodic or quasi-periodic potential variation, e.g. superlattices or multiple quantum wells [MQW]
    • H10D62/8161—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials of structures exhibiting quantum-confinement effects, e.g. single quantum wells; of structures having periodic or quasi-periodic potential variation of structures having periodic or quasi-periodic potential variation, e.g. superlattices or multiple quantum wells [MQW] potential variation due to variations in composition or crystallinity, e.g. heterojunction superlattices
    • H10D62/8162—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials of structures exhibiting quantum-confinement effects, e.g. single quantum wells; of structures having periodic or quasi-periodic potential variation of structures having periodic or quasi-periodic potential variation, e.g. superlattices or multiple quantum wells [MQW] potential variation due to variations in composition or crystallinity, e.g. heterojunction superlattices having quantum effects only in the vertical direction, i.e. layered structures having quantum effects solely resulting from vertical potential variation
    • H10D62/8164—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials of structures exhibiting quantum-confinement effects, e.g. single quantum wells; of structures having periodic or quasi-periodic potential variation of structures having periodic or quasi-periodic potential variation, e.g. superlattices or multiple quantum wells [MQW] potential variation due to variations in composition or crystallinity, e.g. heterojunction superlattices having quantum effects only in the vertical direction, i.e. layered structures having quantum effects solely resulting from vertical potential variation comprising only semiconductor materials 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/14—Shape of semiconductor bodies; Shapes, relative sizes or dispositions of semiconductor regions within semiconductor bodies
    • H10F77/146—Superlattices; Multiple quantum well structures
    • H10F77/1465—Superlattices; Multiple quantum well structures including only Group IV materials, e.g. Si-SiGe superlattices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/34313—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser with a well layer having only As as V-compound, e.g. AlGaAs, InGaAs
    • H01S5/3432—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser with a well layer having only As as V-compound, e.g. AlGaAs, InGaAs the whole junction comprising only (AI)GaAs
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/347—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIBVI compounds, e.g. ZnCdSe- laser

Landscapes

  • Physics & Mathematics (AREA)
  • Nanotechnology (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Optics & Photonics (AREA)
  • Biophysics (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Junction Field-Effect Transistors (AREA)
  • Recrystallisation Techniques (AREA)
JP58136128A 1983-06-24 1983-07-26 半導体装置 Granted JPS6028273A (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP58136128A JPS6028273A (ja) 1983-07-26 1983-07-26 半導体装置
DE8484304300T DE3480631D1 (de) 1983-06-24 1984-06-25 Halbleiterstruktur mit uebergitter hoher traegerdichte.
US06/624,333 US4695857A (en) 1983-06-24 1984-06-25 Superlattice semiconductor having high carrier density
EP84304300A EP0133342B1 (en) 1983-06-24 1984-06-25 A superlattice type semiconductor structure having a high carrier density
US07/043,046 US4792832A (en) 1983-06-24 1987-04-24 Superlattice semiconductor having high carrier density

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58136128A JPS6028273A (ja) 1983-07-26 1983-07-26 半導体装置

Publications (2)

Publication Number Publication Date
JPS6028273A true JPS6028273A (ja) 1985-02-13
JPS639388B2 JPS639388B2 (enrdf_load_stackoverflow) 1988-02-29

Family

ID=15167959

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58136128A Granted JPS6028273A (ja) 1983-06-24 1983-07-26 半導体装置

Country Status (1)

Country Link
JP (1) JPS6028273A (enrdf_load_stackoverflow)

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61210677A (ja) * 1985-03-15 1986-09-18 Sumitomo Electric Ind Ltd 化合物半導体装置
JPS61278168A (ja) * 1985-05-31 1986-12-09 Sumitomo Electric Ind Ltd 化合物半導体装置
JPS6211279A (ja) * 1985-07-08 1987-01-20 Matsushita Electric Ind Co Ltd 電界効果トランジスタ
US4689646A (en) * 1984-06-05 1987-08-25 Nec Corporation Depletion mode two-dimensional electron gas field effect transistor and the method for manufacturing the same
JPS62266874A (ja) * 1986-05-15 1987-11-19 Fujitsu Ltd 半導体装置
JPS632384A (ja) * 1986-06-20 1988-01-07 Fujitsu Ltd 半導体装置
WO1988001792A1 (en) * 1986-09-04 1988-03-10 Varian Associates, Inc. Superlattice for a semiconductor device
US4965645A (en) * 1987-03-20 1990-10-23 International Business Machines Corp. Saturable charge FET
US5023674A (en) * 1985-08-20 1991-06-11 Fujitsu Limited Field effect transistor
JPH08162647A (ja) * 1994-12-05 1996-06-21 Nec Corp 半導体装置

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4689646A (en) * 1984-06-05 1987-08-25 Nec Corporation Depletion mode two-dimensional electron gas field effect transistor and the method for manufacturing the same
JPS61210677A (ja) * 1985-03-15 1986-09-18 Sumitomo Electric Ind Ltd 化合物半導体装置
JPS61278168A (ja) * 1985-05-31 1986-12-09 Sumitomo Electric Ind Ltd 化合物半導体装置
JPS6211279A (ja) * 1985-07-08 1987-01-20 Matsushita Electric Ind Co Ltd 電界効果トランジスタ
US5023674A (en) * 1985-08-20 1991-06-11 Fujitsu Limited Field effect transistor
JPS62266874A (ja) * 1986-05-15 1987-11-19 Fujitsu Ltd 半導体装置
JPS632384A (ja) * 1986-06-20 1988-01-07 Fujitsu Ltd 半導体装置
WO1988001792A1 (en) * 1986-09-04 1988-03-10 Varian Associates, Inc. Superlattice for a semiconductor device
US4965645A (en) * 1987-03-20 1990-10-23 International Business Machines Corp. Saturable charge FET
JPH08162647A (ja) * 1994-12-05 1996-06-21 Nec Corp 半導体装置

Also Published As

Publication number Publication date
JPS639388B2 (enrdf_load_stackoverflow) 1988-02-29

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