JPS60257526A - 絶縁体層の成長方法 - Google Patents

絶縁体層の成長方法

Info

Publication number
JPS60257526A
JPS60257526A JP60003413A JP341385A JPS60257526A JP S60257526 A JPS60257526 A JP S60257526A JP 60003413 A JP60003413 A JP 60003413A JP 341385 A JP341385 A JP 341385A JP S60257526 A JPS60257526 A JP S60257526A
Authority
JP
Japan
Prior art keywords
substrate
oxide
plasma
thickness
insulator
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP60003413A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0347575B2 (enExample
Inventor
アシツト・クマール・レイ
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Publication of JPS60257526A publication Critical patent/JPS60257526A/ja
Publication of JPH0347575B2 publication Critical patent/JPH0347575B2/ja
Granted legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B41/00—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
    • C04B41/009—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone characterised by the material treated
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B41/00—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
    • C04B41/45—Coating or impregnating, e.g. injection in masonry, partial coating of green or fired ceramics, organic coating compositions for adhering together two concrete elements
    • C04B41/50—Coating or impregnating, e.g. injection in masonry, partial coating of green or fired ceramics, organic coating compositions for adhering together two concrete elements with inorganic materials
    • C04B41/5025—Coating or impregnating, e.g. injection in masonry, partial coating of green or fired ceramics, organic coating compositions for adhering together two concrete elements with inorganic materials with ceramic materials
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B41/00—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
    • C04B41/45—Coating or impregnating, e.g. injection in masonry, partial coating of green or fired ceramics, organic coating compositions for adhering together two concrete elements
    • C04B41/50—Coating or impregnating, e.g. injection in masonry, partial coating of green or fired ceramics, organic coating compositions for adhering together two concrete elements with inorganic materials
    • C04B41/5053—Coating or impregnating, e.g. injection in masonry, partial coating of green or fired ceramics, organic coating compositions for adhering together two concrete elements with inorganic materials non-oxide ceramics
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B41/00—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
    • C04B41/80—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone of only ceramics
    • C04B41/81—Coating or impregnation
    • C04B41/85—Coating or impregnation with inorganic materials
    • C04B41/87—Ceramics
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6302—Non-deposition formation processes
    • H10P14/6304—Formation by oxidation, e.g. oxidation of the substrate
    • H10P14/6306—Formation by oxidation, e.g. oxidation of the substrate of the semiconductor materials
    • H10P14/6308—Formation by oxidation, e.g. oxidation of the substrate of the semiconductor materials of Group IV semiconductors
    • H10P14/6309—Formation by oxidation, e.g. oxidation of the substrate of the semiconductor materials of Group IV semiconductors of silicon in uncombined form, i.e. pure silicon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6302—Non-deposition formation processes
    • H10P14/6319—Formation by plasma treatments, e.g. plasma oxidation of the substrate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/65—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials
    • H10P14/6502—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed before formation of the materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6326—Deposition processes
    • H10P14/6328—Deposition from the gas or vapour phase
    • H10P14/6334—Deposition from the gas or vapour phase using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H10P14/6336—Deposition from the gas or vapour phase using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition in the presence of a plasma [PECVD]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/692—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses
    • H10P14/6921—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon
    • H10P14/69215—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon the material being a silicon oxide, e.g. SiO2

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Ceramic Engineering (AREA)
  • Materials Engineering (AREA)
  • Structural Engineering (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Formation Of Insulating Films (AREA)
JP60003413A 1984-05-29 1985-01-14 絶縁体層の成長方法 Granted JPS60257526A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US614177 1984-05-29
US06/614,177 US4510172A (en) 1984-05-29 1984-05-29 Technique for thin insulator growth

Publications (2)

Publication Number Publication Date
JPS60257526A true JPS60257526A (ja) 1985-12-19
JPH0347575B2 JPH0347575B2 (enExample) 1991-07-19

Family

ID=24460163

Family Applications (1)

Application Number Title Priority Date Filing Date
JP60003413A Granted JPS60257526A (ja) 1984-05-29 1985-01-14 絶縁体層の成長方法

Country Status (4)

Country Link
US (1) US4510172A (enExample)
EP (1) EP0166120B1 (enExample)
JP (1) JPS60257526A (enExample)
DE (1) DE3563985D1 (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2020054038A1 (ja) * 2018-09-13 2020-03-19 株式会社Ｋｏｋｕｓａｉ Ｅｌｅｃｔｒｉｃ 半導体装置の製造方法、基板処理装置、及びプログラム

Families Citing this family (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0102489B1 (de) * 1982-07-31 1987-02-04 BROWN, BOVERI & CIE Aktiengesellschaft Supraleitendes Faserbündel und Verfahren zu dessen Herstellung
ATE49023T1 (de) * 1984-03-03 1990-01-15 Stc Plc Pulsierendes plasmaverfahren.
US4671845A (en) * 1985-03-22 1987-06-09 The United States Of America As Represented By The Secretary Of The Navy Method for producing high quality germanium-germanium nitride interfaces for germanium semiconductors and device produced thereby
US4804640A (en) * 1985-08-27 1989-02-14 General Electric Company Method of forming silicon and aluminum containing dielectric film and semiconductor device including said film
KR910003742B1 (ko) * 1986-09-09 1991-06-10 세미콘덕터 에너지 라보라터리 캄파니 리미티드 Cvd장치
FR2604826B1 (fr) * 1986-10-06 1989-01-20 France Etat Procede de formation d'une couche isolante comportant du sulfure, derives sulfures obtenus et appareillage pour la mise en oeuvre du procede
US4774201A (en) * 1988-01-07 1988-09-27 Intel Corporation Tungsten-silicide reoxidation technique using a CVD oxide cap
DE3802852A1 (de) * 1988-02-01 1989-08-03 Leybold Ag Einrichtung fuer die beschichtung eines substrats mit einem material, das aus einem plasma gewonnen wird
US5156909A (en) * 1989-11-28 1992-10-20 Battelle Memorial Institute Thick, low-stress films, and coated substrates formed therefrom, and methods for making same
US5061574A (en) * 1989-11-28 1991-10-29 Battelle Memorial Institute Thick, low-stress films, and coated substrates formed therefrom
US5039625A (en) * 1990-04-27 1991-08-13 Mcnc Maximum areal density recessed oxide isolation (MADROX) process
US5356722A (en) * 1992-06-10 1994-10-18 Applied Materials, Inc. Method for depositing ozone/TEOS silicon oxide films of reduced surface sensitivity
JP3590416B2 (ja) * 1993-11-29 2004-11-17 アネルバ株式会社 薄膜形成方法および薄膜形成装置
JP3660391B2 (ja) * 1994-05-27 2005-06-15 株式会社東芝 半導体装置の製造方法
US6060132A (en) * 1998-06-15 2000-05-09 Siemens Aktiengesellschaft High density plasma CVD process for making dielectric anti-reflective coatings
US6287897B1 (en) * 2000-02-29 2001-09-11 International Business Machines Corporation Gate dielectric with self forming diffusion barrier
US7291568B2 (en) * 2003-08-26 2007-11-06 International Business Machines Corporation Method for fabricating a nitrided silicon-oxide gate dielectric
JP2006135161A (ja) * 2004-11-08 2006-05-25 Canon Inc 絶縁膜の形成方法及び装置
JP2009224374A (ja) * 2008-03-13 2009-10-01 Oki Semiconductor Co Ltd Ｐｅｂ装置及びその制御方法

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5633839A (en) * 1979-08-29 1981-04-04 Hitachi Ltd Plasma treatment and device therefor
JPS5892216A (ja) * 1981-11-27 1983-06-01 Mitsubishi Electric Corp 半導体装置の製造方法

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3647535A (en) * 1969-10-27 1972-03-07 Ncr Co Method of controllably oxidizing a silicon wafer
US4279947A (en) * 1975-11-25 1981-07-21 Motorola, Inc. Deposition of silicon nitride
JPS53112066A (en) * 1977-03-11 1978-09-30 Fujitsu Ltd Plasma treatment apparatus
US4222839A (en) * 1978-09-21 1980-09-16 Motorola, Inc. Workpiece holder and method for plasma reactor apparatus
US4232057A (en) * 1979-03-01 1980-11-04 International Business Machines Corporation Semiconductor plasma oxidation
JPS5845177B2 (ja) * 1979-03-09 1983-10-07 富士通株式会社 半導体表面絶縁膜の形成法
JPS5846057B2 (ja) * 1979-03-19 1983-10-14 富士通株式会社 プラズマ処理方法
US4239811A (en) * 1979-08-16 1980-12-16 International Business Machines Corporation Low pressure chemical vapor deposition of silicon dioxide with oxygen enhancement of the chlorosilane-nitrous oxide reaction
US4287851A (en) * 1980-01-16 1981-09-08 Dozier Alfred R Mounting and excitation system for reaction in the plasma state
US4323589A (en) * 1980-05-07 1982-04-06 International Business Machines Corporation Plasma oxidation
US4448633A (en) * 1982-11-29 1984-05-15 United Technologies Corporation Passivation of III-V semiconductor surfaces by plasma nitridation

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5633839A (en) * 1979-08-29 1981-04-04 Hitachi Ltd Plasma treatment and device therefor
JPS5892216A (ja) * 1981-11-27 1983-06-01 Mitsubishi Electric Corp 半導体装置の製造方法

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2020054038A1 (ja) * 2018-09-13 2020-03-19 株式会社Ｋｏｋｕｓａｉ Ｅｌｅｃｔｒｉｃ 半導体装置の製造方法、基板処理装置、及びプログラム
JPWO2020054038A1 (ja) * 2018-09-13 2021-08-30 株式会社Ｋｏｋｕｓａｉ Ｅｌｅｃｔｒｉｃ 半導体装置の製造方法、基板処理装置、及びプログラム
US11908682B2 (en) 2018-09-13 2024-02-20 Kokusai Electric Corporation Method of manufacturing semiconductor device, substrate processing apparatus and non-transitory computer-readable recording medium

Also Published As

Publication number Publication date
DE3563985D1 (en) 1988-09-01
EP0166120B1 (en) 1988-07-27
EP0166120A1 (en) 1986-01-02
US4510172A (en) 1985-04-09
JPH0347575B2 (enExample) 1991-07-19

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