JPS6025254A - 集積回路の製造方法 - Google Patents

集積回路の製造方法

Info

Publication number
JPS6025254A
JPS6025254A JP58133329A JP13332983A JPS6025254A JP S6025254 A JPS6025254 A JP S6025254A JP 58133329 A JP58133329 A JP 58133329A JP 13332983 A JP13332983 A JP 13332983A JP S6025254 A JPS6025254 A JP S6025254A
Authority
JP
Japan
Prior art keywords
wiring
silicon
insulating film
oxide film
gate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP58133329A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0582071B2 (enExample
Inventor
Nobuhiro Endo
遠藤　伸裕
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP58133329A priority Critical patent/JPS6025254A/ja
Publication of JPS6025254A publication Critical patent/JPS6025254A/ja
Publication of JPH0582071B2 publication Critical patent/JPH0582071B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/63—Vertical IGFETs

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
JP58133329A 1983-07-21 1983-07-21 集積回路の製造方法 Granted JPS6025254A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP58133329A JPS6025254A (ja) 1983-07-21 1983-07-21 集積回路の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58133329A JPS6025254A (ja) 1983-07-21 1983-07-21 集積回路の製造方法

Publications (2)

Publication Number Publication Date
JPS6025254A true JPS6025254A (ja) 1985-02-08
JPH0582071B2 JPH0582071B2 (enExample) 1993-11-17

Family

ID=15102164

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58133329A Granted JPS6025254A (ja) 1983-07-21 1983-07-21 集積回路の製造方法

Country Status (1)

Country Link
JP (1) JPS6025254A (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH09321289A (ja) * 1996-05-30 1997-12-12 Nec Yamagata Ltd 縦型電界効果トランジスタ

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57128966A (en) * 1981-02-02 1982-08-10 Seiko Epson Corp Mis type semiconductor device

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57128966A (en) * 1981-02-02 1982-08-10 Seiko Epson Corp Mis type semiconductor device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH09321289A (ja) * 1996-05-30 1997-12-12 Nec Yamagata Ltd 縦型電界効果トランジスタ

Also Published As

Publication number Publication date
JPH0582071B2 (enExample) 1993-11-17

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