JPS60243663A - 電子写真感光体 - Google Patents
電子写真感光体Info
- Publication number
- JPS60243663A JPS60243663A JP59100751A JP10075184A JPS60243663A JP S60243663 A JPS60243663 A JP S60243663A JP 59100751 A JP59100751 A JP 59100751A JP 10075184 A JP10075184 A JP 10075184A JP S60243663 A JPS60243663 A JP S60243663A
- Authority
- JP
- Japan
- Prior art keywords
- gas
- film
- absorption
- ratio
- flow rate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03G—ELECTROGRAPHY; ELECTROPHOTOGRAPHY; MAGNETOGRAPHY
- G03G5/00—Recording-members for original recording by exposure, e.g. to light, to heat or to electrons; Manufacture thereof; Selection of materials therefor
- G03G5/02—Charge-receiving layers
- G03G5/04—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor
- G03G5/08—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor characterised by the photoconductive material being inorganic
- G03G5/082—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor characterised by the photoconductive material being inorganic and not being incorporated in a bonding material, e.g. vacuum deposited
- G03G5/08214—Silicon-based
- G03G5/08221—Silicon-based comprising one or two silicon based layers
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03G—ELECTROGRAPHY; ELECTROPHOTOGRAPHY; MAGNETOGRAPHY
- G03G5/00—Recording-members for original recording by exposure, e.g. to light, to heat or to electrons; Manufacture thereof; Selection of materials therefor
- G03G5/02—Charge-receiving layers
- G03G5/04—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor
- G03G5/08—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor characterised by the photoconductive material being inorganic
- G03G5/082—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor characterised by the photoconductive material being inorganic and not being incorporated in a bonding material, e.g. vacuum deposited
- G03G5/08214—Silicon-based
- G03G5/08278—Depositing methods
Landscapes
- Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Photoreceptors In Electrophotography (AREA)
- Chemical Vapour Deposition (AREA)
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59100751A JPS60243663A (ja) | 1984-05-18 | 1984-05-18 | 電子写真感光体 |
| US06/654,197 US4624906A (en) | 1984-05-18 | 1984-09-24 | Electrophotographic sensitive member having a fluorinated amorphous silicon photoconductive layer |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59100751A JPS60243663A (ja) | 1984-05-18 | 1984-05-18 | 電子写真感光体 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS60243663A true JPS60243663A (ja) | 1985-12-03 |
| JPH0514899B2 JPH0514899B2 (https=) | 1993-02-26 |
Family
ID=14282223
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP59100751A Granted JPS60243663A (ja) | 1984-05-18 | 1984-05-18 | 電子写真感光体 |
Country Status (2)
| Country | Link |
|---|---|
| US (1) | US4624906A (https=) |
| JP (1) | JPS60243663A (https=) |
Families Citing this family (21)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4849315A (en) * | 1985-01-21 | 1989-07-18 | Xerox Corporation | Processes for restoring hydrogenated and halogenated amorphous silicon imaging members |
| US4772486A (en) * | 1985-02-18 | 1988-09-20 | Canon Kabushiki Kaisha | Process for forming a deposited film |
| JP2635021B2 (ja) * | 1985-09-26 | 1997-07-30 | 宣夫 御子柴 | 堆積膜形成法及びこれに用いる装置 |
| US4812325A (en) * | 1985-10-23 | 1989-03-14 | Canon Kabushiki Kaisha | Method for forming a deposited film |
| CA1315614C (en) * | 1985-10-23 | 1993-04-06 | Shunichi Ishihara | Method for forming deposited film |
| JPS62136885A (ja) * | 1985-12-11 | 1987-06-19 | Canon Inc | 光起電力素子、その製造方法及びその製造装置 |
| JPH0752305B2 (ja) * | 1985-12-11 | 1995-06-05 | キヤノン株式会社 | 電子写真感光体の製造方法 |
| JPS62136871A (ja) * | 1985-12-11 | 1987-06-19 | Canon Inc | 光センサ−、その製造方法及びその製造装置 |
| JPH0645886B2 (ja) * | 1985-12-16 | 1994-06-15 | キヤノン株式会社 | 堆積膜形成法 |
| JPH0647730B2 (ja) * | 1985-12-25 | 1994-06-22 | キヤノン株式会社 | 堆積膜形成法 |
| JPH0651906B2 (ja) * | 1985-12-25 | 1994-07-06 | キヤノン株式会社 | 堆積膜形成法 |
| US5391232A (en) * | 1985-12-26 | 1995-02-21 | Canon Kabushiki Kaisha | Device for forming a deposited film |
| JPH0651909B2 (ja) * | 1985-12-28 | 1994-07-06 | キヤノン株式会社 | 薄膜多層構造の形成方法 |
| JPH084070B2 (ja) * | 1985-12-28 | 1996-01-17 | キヤノン株式会社 | 薄膜半導体素子及びその形成法 |
| JPH0651908B2 (ja) * | 1985-12-28 | 1994-07-06 | キヤノン株式会社 | 薄膜多層構造の形成方法 |
| GB2185758B (en) * | 1985-12-28 | 1990-09-05 | Canon Kk | Method for forming deposited film |
| JP2566914B2 (ja) * | 1985-12-28 | 1996-12-25 | キヤノン株式会社 | 薄膜半導体素子及びその形成法 |
| US5322568A (en) * | 1985-12-28 | 1994-06-21 | Canon Kabushiki Kaisha | Apparatus for forming deposited film |
| US5366554A (en) * | 1986-01-14 | 1994-11-22 | Canon Kabushiki Kaisha | Device for forming a deposited film |
| US4800173A (en) * | 1986-02-20 | 1989-01-24 | Canon Kabushiki Kaisha | Process for preparing Si or Ge epitaxial film using fluorine oxidant |
| TWI396590B (zh) * | 2009-10-30 | 2013-05-21 | Atomic Energy Council | 氣體反應裝置 |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS58100135A (ja) * | 1981-11-06 | 1983-06-14 | Konishiroku Photo Ind Co Ltd | 感光体 |
| JPS58159325A (ja) * | 1982-03-17 | 1983-09-21 | Minolta Camera Co Ltd | 感光体 |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS55166647A (en) * | 1979-06-15 | 1980-12-25 | Fuji Photo Film Co Ltd | Photoconductive composition and electrophotographic receptor using this |
| JPS5727263A (en) * | 1980-07-28 | 1982-02-13 | Hitachi Ltd | Electrophotographic photosensitive film |
| US4468443A (en) * | 1981-03-12 | 1984-08-28 | Canon Kabushiki Kaisha | Process for producing photoconductive member from gaseous silicon compounds |
-
1984
- 1984-05-18 JP JP59100751A patent/JPS60243663A/ja active Granted
- 1984-09-24 US US06/654,197 patent/US4624906A/en not_active Expired - Lifetime
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS58100135A (ja) * | 1981-11-06 | 1983-06-14 | Konishiroku Photo Ind Co Ltd | 感光体 |
| JPS58159325A (ja) * | 1982-03-17 | 1983-09-21 | Minolta Camera Co Ltd | 感光体 |
Also Published As
| Publication number | Publication date |
|---|---|
| US4624906A (en) | 1986-11-25 |
| JPH0514899B2 (https=) | 1993-02-26 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| EXPY | Cancellation because of completion of term |